KR950014558B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR950014558B1
KR950014558B1 KR1019910024148A KR910024148A KR950014558B1 KR 950014558 B1 KR950014558 B1 KR 950014558B1 KR 1019910024148 A KR1019910024148 A KR 1019910024148A KR 910024148 A KR910024148 A KR 910024148A KR 950014558 B1 KR950014558 B1 KR 950014558B1
Authority
KR
South Korea
Prior art keywords
bit line
voltage
circuit
pad
switching circuit
Prior art date
Application number
KR1019910024148A
Other languages
English (en)
Korean (ko)
Other versions
KR920013455A (ko
Inventor
히로아키 다나가
마사루 고야나기
Original Assignee
가부시기가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시기가이샤 도시바, 아오이 죠이치 filed Critical 가부시기가이샤 도시바
Publication of KR920013455A publication Critical patent/KR920013455A/ko
Application granted granted Critical
Publication of KR950014558B1 publication Critical patent/KR950014558B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/316—Testing of analog circuits
    • G01R31/3161—Marginal testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31712—Input or output aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/31712—Input or output aspects
    • G01R31/31715—Testing of input or output circuits; test of circuitry between the I/C pins and the functional core, e.g. testing of input or output driver, receiver, buffer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
KR1019910024148A 1990-12-27 1991-12-24 반도체 장치 KR950014558B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP41876490A JP3381929B2 (ja) 1990-12-27 1990-12-27 半導体装置
JP90-418764 1990-12-27

Publications (2)

Publication Number Publication Date
KR920013455A KR920013455A (ko) 1992-07-29
KR950014558B1 true KR950014558B1 (ko) 1995-12-05

Family

ID=18526550

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024148A KR950014558B1 (ko) 1990-12-27 1991-12-24 반도체 장치

Country Status (5)

Country Link
US (1) US5357193A (ja)
EP (1) EP0492609B1 (ja)
JP (1) JP3381929B2 (ja)
KR (1) KR950014558B1 (ja)
DE (1) DE69129060T2 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2533221B2 (ja) * 1990-05-11 1996-09-11 株式会社東芝 ダイナミック型ランダムアクセスメモリ
US5391984A (en) * 1991-11-01 1995-02-21 Sgs-Thomson Microelectronics, Inc. Method and apparatus for testing integrated circuit devices
US5648730A (en) * 1994-11-30 1997-07-15 Texas Instruments Incorporated Large integrated circuit with modular probe structures
US5627787A (en) * 1995-01-03 1997-05-06 Sgs-Thomson Microelectronics, Inc. Periphery stress test for synchronous RAMs
KR100375177B1 (ko) * 1995-05-19 2003-05-09 마츠시타 덴끼 산교 가부시키가이샤 반도체 장치의 검사방법
KR100220949B1 (ko) * 1996-11-06 1999-09-15 김영환 웨이퍼 번-인 회로
JPH10269767A (ja) * 1997-03-19 1998-10-09 Mitsubishi Electric Corp 半導体装置
US5898706A (en) * 1997-04-30 1999-04-27 International Business Machines Corporation Structure and method for reliability stressing of dielectrics
US6037795A (en) * 1997-09-26 2000-03-14 International Business Machines Corporation Multiple device test layout
US5999466A (en) * 1998-01-13 1999-12-07 Micron Technology, Inc. Method, apparatus and system for voltage screening of integrated circuits
US6055199A (en) * 1998-10-21 2000-04-25 Mitsubishi Denki Kabushiki Kaisha Test circuit for a semiconductor memory device and method for burn-in test
US6327682B1 (en) 1999-03-22 2001-12-04 Taiwan Semiconductor Manufacturing Company Wafer burn-in design for DRAM and FeRAM devices
JP2001067898A (ja) * 1999-08-30 2001-03-16 Mitsubishi Electric Corp 半導体記憶装置
JP4783487B2 (ja) * 2000-02-22 2011-09-28 株式会社カネカ 太陽電池モジュールの逆バイアス処理装置
JP2004247026A (ja) * 2003-01-24 2004-09-02 Renesas Technology Corp 半導体集積回路及びｉｃカード
KR100542695B1 (ko) * 2003-11-13 2006-01-11 주식회사 하이닉스반도체 반도체 소자의 테스트 모드 회로
KR20100125099A (ko) * 2009-05-20 2010-11-30 삼성전자주식회사 반도체 장치
KR20210026432A (ko) * 2019-08-30 2021-03-10 에스케이하이닉스 주식회사 반도체 메모리 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961254A (en) * 1974-12-20 1976-06-01 International Business Machines Corporation Testing embedded arrays
DE2905271A1 (de) * 1979-02-12 1980-08-21 Philips Patentverwaltung Integrierte schaltungsanordnung in mos-technik mit feldeffekttransistoren
DE2905294A1 (de) * 1979-02-12 1980-08-21 Philips Patentverwaltung Integrierte schaltungsanordnung in mos-technik mit feldeffekttransistoren
DE2944149C2 (de) * 1979-11-02 1985-02-21 Philips Patentverwaltung Gmbh, 2000 Hamburg Integrierte Schaltungsanordnung in MOS-Technik
EP0059188A1 (en) * 1980-09-08 1982-09-08 Mostek Corporation Tape burn-in circuit
EP0059184A1 (en) * 1980-09-08 1982-09-08 Mostek Corporation Go/no go margin test circuit for semiconductor memory
US4357703A (en) * 1980-10-09 1982-11-02 Control Data Corporation Test system for LSI circuits resident on LSI chips
US4519076A (en) * 1981-12-28 1985-05-21 National Semiconductor Corporation Memory core testing system
JPS59500840A (ja) * 1982-05-17 1984-05-10 モトロ−ラ・インコ−ポレ−テツド メモリの加速試験用のパッド
JPS60235455A (ja) * 1984-05-09 1985-11-22 Toshiba Corp ダイナミツクメモリ−
JPS61265829A (ja) * 1985-05-20 1986-11-25 Fujitsu Ltd 半導体集積回路
US4733168A (en) * 1986-03-21 1988-03-22 Harris Corporation Test enabling circuit for enabling overhead test circuitry in programmable devices
US4970454A (en) * 1986-12-09 1990-11-13 Texas Instruments Incorporated Packaged semiconductor device with test circuits for determining fabrication parameters
US4751679A (en) * 1986-12-22 1988-06-14 Motorola, Inc. Gate stress test of a MOS memory
ATE117457T1 (de) * 1989-03-16 1995-02-15 Siemens Ag Integrierter halbleiterspeicher vom typ dram und verfahren zu seinem testen.
US5107208A (en) * 1989-12-19 1992-04-21 North American Philips Corporation System for partitioning and testing submodule circuits of an integrated circuit

Also Published As

Publication number Publication date
DE69129060T2 (de) 1998-07-30
EP0492609B1 (en) 1998-03-11
KR920013455A (ko) 1992-07-29
JPH04230049A (ja) 1992-08-19
JP3381929B2 (ja) 2003-03-04
DE69129060D1 (de) 1998-04-16
US5357193A (en) 1994-10-18
EP0492609A3 (en) 1993-04-21
EP0492609A2 (en) 1992-07-01

Similar Documents

Publication Publication Date Title
US5404099A (en) Semiconductor device
KR950014558B1 (ko) 반도체 장치
US6625073B1 (en) Apparatus and method for testing for defects between memory cells in packaged semiconductor memory devices
US5771188A (en) Adjustable cell plate generator
KR960002010B1 (ko) 반도체 기억 장치
US4821238A (en) Semiconductor memory device having test pattern generating circuit
US4950921A (en) Semiconductor integrated circuit having a built-in voltage generator for testing at different power supply voltages
JPH04232693A (ja) スタティック型半導体記憶装置
KR960000721B1 (ko) 반도체 기억장치
KR100200916B1 (ko) 웨이퍼 테스트 신호 발생기를 가지는 반도체 메모리 장치
US5293340A (en) Dynamic random access memory device with multiple word line selector used in burn-in test
US5282167A (en) Dynamic random access memory
US5255229A (en) Dynamic random access memory including stress test circuitry
US20020075721A1 (en) Semiconductor integrated circuit with memory redundancy circuit
EP0456255B1 (en) Dynamic memory device and method for screening the same
US6704231B1 (en) Semiconductor memory device with circuit executing burn-in testing
JP6756866B1 (ja) 半導体記憶装置の試験装置および試験方法
US6949953B2 (en) Method and apparatus for providing a preselected voltage to test or repair a semiconductor device
JP2965881B2 (ja) 半導体記憶装置
JP2002033360A (ja) 半導体ウェハ
JPH11317097A (ja) 半導体記憶装置
US8174914B2 (en) Method and structure for SRAM Vmin/Vmax measurement
KR19980015271A (ko) 반도체 메모리 장치의 번인(Burn-In) 스트레스 회로 및 그 방법
KR20050050702A (ko) 웨이퍼 번인 테스트 방법
JPH0685209A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20051130

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee