KR950011019B1 - Power transistor device and its making method - Google Patents

Power transistor device and its making method Download PDF

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Publication number
KR950011019B1
KR950011019B1 KR91007564A KR910007564A KR950011019B1 KR 950011019 B1 KR950011019 B1 KR 950011019B1 KR 91007564 A KR91007564 A KR 91007564A KR 910007564 A KR910007564 A KR 910007564A KR 950011019 B1 KR950011019 B1 KR 950011019B1
Authority
KR
South Korea
Prior art keywords
power transistor
transistor device
making method
making
power
Prior art date
Application number
KR91007564A
Other languages
English (en)
Other versions
KR910020923A (ko
Inventor
Perii Merrill
Herbert J Gould
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of KR910020923A publication Critical patent/KR910020923A/ko
Application granted granted Critical
Publication of KR950011019B1 publication Critical patent/KR950011019B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
KR91007564A 1990-05-09 1991-05-09 Power transistor device and its making method KR950011019B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52117790A 1990-05-09 1990-05-09
US521177 1990-05-09

Publications (2)

Publication Number Publication Date
KR910020923A KR910020923A (ko) 1991-12-20
KR950011019B1 true KR950011019B1 (en) 1995-09-27

Family

ID=24075680

Family Applications (1)

Application Number Title Priority Date Filing Date
KR91007564A KR950011019B1 (en) 1990-05-09 1991-05-09 Power transistor device and its making method

Country Status (9)

Country Link
US (2) US5661314A (ko)
JP (1) JP3004077B2 (ko)
KR (1) KR950011019B1 (ko)
AT (1) AT404525B (ko)
CA (1) CA2042069A1 (ko)
DE (1) DE4114174A1 (ko)
FR (1) FR2662025A1 (ko)
GB (1) GB2243952B (ko)
IT (1) IT1247293B (ko)

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US6781203B2 (en) * 2001-11-09 2004-08-24 International Rectifier Corporation MOSFET with reduced threshold voltage and on resistance and process for its manufacture
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KR100722909B1 (ko) * 2005-08-30 2007-05-30 닛산 지도우샤 가부시키가이샤 반도체 장치
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
US7655977B2 (en) * 2005-10-18 2010-02-02 International Rectifier Corporation Trench IGBT for highly capacitive loads
US7956419B2 (en) * 2005-11-02 2011-06-07 International Rectifier Corporation Trench IGBT with depletion stop layer
CN103890953B (zh) 2012-03-23 2016-10-19 松下知识产权经营株式会社 半导体元件
JP6024751B2 (ja) * 2012-07-18 2016-11-16 富士電機株式会社 半導体装置および半導体装置の製造方法
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US9263271B2 (en) * 2012-10-25 2016-02-16 Infineon Technologies Ag Method for processing a semiconductor carrier, a semiconductor chip arrangement and a method for manufacturing a semiconductor device
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Also Published As

Publication number Publication date
IT1247293B (it) 1994-12-12
JPH04229660A (ja) 1992-08-19
ATA95691A (de) 1998-04-15
AT404525B (de) 1998-12-28
KR910020923A (ko) 1991-12-20
CA2042069A1 (en) 1991-11-10
ITMI911121A1 (it) 1992-10-23
JP3004077B2 (ja) 2000-01-31
US5904510A (en) 1999-05-18
DE4114174A1 (de) 1991-11-14
FR2662025A1 (fr) 1991-11-15
GB2243952B (en) 1994-08-17
GB9110071D0 (en) 1991-07-03
GB2243952A (en) 1991-11-13
US5661314A (en) 1997-08-26
ITMI911121A0 (it) 1991-04-23

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