KR950006867A - 페이지 소거 구조를 갖는 플래시 이이피롬 어레이용 독립 어레이 접지 - Google Patents

페이지 소거 구조를 갖는 플래시 이이피롬 어레이용 독립 어레이 접지 Download PDF

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Publication number
KR950006867A
KR950006867A KR1019940020701A KR19940020701A KR950006867A KR 950006867 A KR950006867 A KR 950006867A KR 1019940020701 A KR1019940020701 A KR 1019940020701A KR 19940020701 A KR19940020701 A KR 19940020701A KR 950006867 A KR950006867 A KR 950006867A
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KR
South Korea
Prior art keywords
sector
ground line
semiconductor integrated
integrated circuit
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019940020701A
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English (en)
Korean (ko)
Inventor
케이. 창 청
씨. 첸 쟈니
에이. 반 버스커크 마이클
이. 클리브랜드 리
Original Assignee
미키오 이시마루
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미키오 이시마루, 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 미키오 이시마루
Publication of KR950006867A publication Critical patent/KR950006867A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019940020701A 1993-08-23 1994-08-22 페이지 소거 구조를 갖는 플래시 이이피롬 어레이용 독립 어레이 접지 Withdrawn KR950006867A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US8/109,887 1993-08-23
US08/109,887 US5365484A (en) 1993-08-23 1993-08-23 Independent array grounds for flash EEPROM array with paged erase architechture

Publications (1)

Publication Number Publication Date
KR950006867A true KR950006867A (ko) 1995-03-21

Family

ID=22330097

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940020701A Withdrawn KR950006867A (ko) 1993-08-23 1994-08-22 페이지 소거 구조를 갖는 플래시 이이피롬 어레이용 독립 어레이 접지

Country Status (5)

Country Link
US (1) US5365484A (enExample)
EP (1) EP0640984A3 (enExample)
JP (1) JP3768251B2 (enExample)
KR (1) KR950006867A (enExample)
TW (1) TW271482B (enExample)

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Also Published As

Publication number Publication date
JP3768251B2 (ja) 2006-04-19
US5365484A (en) 1994-11-15
JPH07153289A (ja) 1995-06-16
EP0640984A2 (en) 1995-03-01
TW271482B (enExample) 1996-03-01
EP0640984A3 (en) 1997-11-12

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PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19940822

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid