KR950006541A - 감소형 투영 프린팅 장치에 사용되는 공간 필터 - Google Patents

감소형 투영 프린팅 장치에 사용되는 공간 필터 Download PDF

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Publication number
KR950006541A
KR950006541A KR1019940021156A KR19940021156A KR950006541A KR 950006541 A KR950006541 A KR 950006541A KR 1019940021156 A KR1019940021156 A KR 1019940021156A KR 19940021156 A KR19940021156 A KR 19940021156A KR 950006541 A KR950006541 A KR 950006541A
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South Korea
Prior art keywords
central region
spatial filter
transmittance
phase difference
generating
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KR1019940021156A
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English (en)
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KR0153221B1 (ko
Inventor
다까시 스지하라
다까시 후꾸시마
준꼬 다까기
Original Assignee
쯔지 하루오
샤프 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Projection-Type Copiers In General (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

감소형 투영 프린팅 장치에 사용되는 공간 필터가 광선 빔이 많아야 규정된 값의 투과율에서 통과하는 중심영역, 중심 영역을 둘러싼 실질적으로 투명한 주변 영역(3), 및 중심영역과 주변 영역을 통과하는 광선 빔간에 180°의 위상 차를 생성하기 위한 수단(G1, 6, G2)를 포함한다.

Description

감소형 투영 프린팅 장치에 사용되는 공간 필터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제10도는 본 발명에 따른 공간 필터를 갖는 투영 프린팅 장치의 조명 시스템을 도시한 개략적인 단면도.

Claims (6)

  1. 미세 패턴으로 포토마스크를 조명하기 위한 광학 조명 시스템과 화상 형성 평면 위에 상기 미세 패턴을 감소 투영하기 위한 광학 투영 시스템을 구비한 감소형 투영 프린팅 장치에서, 상기 광학 조명 시스템에 포함된 조명원의 근처에 위치하는 공간 필터에 있어서, 상기 공간 필터가 광선 빔이 많아야 규정된 값이 투과율로 통과하는 중심 영역, 상기 중심 영역을 둘러싸고 실질적으로 투명한 주변 영역(3), 및 중심영역과 주변 영역(3)을 통과하는 광선 빔들간에 실질적으로 180°의 위상 차를 생성하기 위한 수단(G1, G2)를 포함하는 것을 특징으로 하는 공간 필터.
  2. 제1항에 있어서, 상기 필터가 광선 실딩 층(2)를 포함하고, 상기 중심 영역에서 많아야 상기 규정된 값의 투과율이 상기 광선 실딩 층(2)에 형성되는 복수의 작은 애퍼추어(4)에 의해 얻어지는 것을 특징으로 하는 공간 필터.
  3. 제1항에 있어서, 상기 중심 영역에서 많아야 상기 규정된 값의 투과율이 반투명 균일한 층(6)에 의해 얻어질 수 있는 것을 특징으로 하는 공간 필터.
  4. 제1항에 있어서, 상기 공간 필터가 실질적으로 투명한 기판(1)을 포함하고, 위상차를 생성하기 위한 상기 수단이 규정된 양(G1)만큼 상기 기판(1)의 두께를 변화시키는 것에 의해 얻어지는 것을 특징으로 하는 공간 필터.
  5. 제1항에 있어서, 위상 차를 생성하기 위한 상기 수단이 규정된 두께(G2)를 갖는 실질적으로 투명한 부가층을 포함하는 것을 특징으로 하는 공간 필터.
  6. 제1항에 있어서, 상기 중심 영역이 많아야 45%의 투과율을 갖는 것을 특징으로 하는 공간 필터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940021156A 1993-08-27 1994-08-26 감소형 투영 프린팅 장치에 사용되는 공간 필터 KR0153221B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21250093 1993-08-27
JP93-212500 1993-08-27

Publications (2)

Publication Number Publication Date
KR950006541A true KR950006541A (ko) 1995-03-21
KR0153221B1 KR0153221B1 (ko) 1998-11-02

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KR1019940021156A KR0153221B1 (ko) 1993-08-27 1994-08-26 감소형 투영 프린팅 장치에 사용되는 공간 필터

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Country Link
US (1) US5642183A (ko)
KR (1) KR0153221B1 (ko)
DE (1) DE4430253C2 (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5638211A (en) * 1990-08-21 1997-06-10 Nikon Corporation Method and apparatus for increasing the resolution power of projection lithography exposure system
JP3630807B2 (ja) * 1994-12-28 2005-03-23 キヤノン株式会社 走査露光装置及び当該走査露光装置を用いたデバイスの製造方法
JP3571397B2 (ja) * 1995-02-20 2004-09-29 シャープ株式会社 光源フィルタ、それを用いた投影露光装置および投影露光方法
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
DE69736022T2 (de) * 1996-03-18 2006-10-26 Matsushita Electric Industrial Co., Ltd., Kadoma Belichtungsapparat
TW365652B (en) * 1996-05-08 1999-08-01 Texas Instruments Inc Method and system for improved optical imaging in microlithography
US6628370B1 (en) 1996-11-25 2003-09-30 Mccullough Andrew W. Illumination system with spatially controllable partial coherence compensating for line width variances in a photolithographic system
US6259513B1 (en) * 1996-11-25 2001-07-10 Svg Lithography Systems, Inc. Illumination system with spatially controllable partial coherence
US6930754B1 (en) * 1998-06-30 2005-08-16 Canon Kabushiki Kaisha Multiple exposure method
US6727975B1 (en) * 1999-06-14 2004-04-27 Micron Technology, Inc. Device and method of correcting exposure defects in photolithography
US6507389B1 (en) * 2000-04-07 2003-01-14 Promos Technologies, Inc. Photolithography system having a frequency domain filtering mask
DE10043315C1 (de) 2000-09-02 2002-06-20 Zeiss Carl Projektionsbelichtungsanlage
US6897943B2 (en) * 2000-12-21 2005-05-24 Infineon Technologies Ag Method and apparatus for aerial image improvement in projection lithography using a phase shifting aperture
US6573975B2 (en) 2001-04-04 2003-06-03 Pradeep K. Govil DUV scanner linewidth control by mask error factor compensation
WO2006021406A2 (en) * 2004-08-23 2006-03-02 Micronic Laser Systems Ab Pupil improvement of incoherent imaging systems for enhanced cd linearity
JP2006222222A (ja) * 2005-02-09 2006-08-24 Canon Inc 投影光学系及びそれを有する露光装置
US7423818B2 (en) * 2005-07-15 2008-09-09 Electro Scientific Industries, Inc. Method of suppressing distortion of a working laser beam of a laser link processing system
KR101247768B1 (ko) * 2007-10-12 2013-03-25 알박 세이마쿠 가부시키가이샤 그레이 톤 마스크의 제조 방법
JP6435131B2 (ja) * 2014-08-07 2018-12-05 株式会社Ｓｃｒｅｅｎホールディングス 光照射装置、描画装置および位相差生成器
US10162257B2 (en) * 2016-12-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet lithography system, device, and method for printing low pattern density features
US10615067B2 (en) * 2018-05-18 2020-04-07 Kla-Tencor Corporation Phase filter for enhanced defect detection in multilayer structure

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037591B2 (ja) * 1979-04-12 1985-08-27 古河電気工業株式会社 超電導線の接続方法
JPS60206664A (ja) * 1984-03-31 1985-10-18 Canon Inc 液体噴射記録装置
JP2740667B2 (ja) * 1989-02-20 1998-04-15 株式会社リコー 光学的情報記憶媒体
JP2566048B2 (ja) * 1990-04-19 1996-12-25 シャープ株式会社 光露光用マスク及びその製造方法
JP3245882B2 (ja) * 1990-10-24 2002-01-15 株式会社日立製作所 パターン形成方法、および投影露光装置
JP2581845B2 (ja) * 1991-01-08 1997-02-12 三菱電機株式会社 投影露光装置
JP3200894B2 (ja) * 1991-03-05 2001-08-20 株式会社日立製作所 露光方法及びその装置
US5348837A (en) * 1991-09-24 1994-09-20 Hitachi, Ltd. Projection exposure apparatus and pattern forming method for use therewith
DE4303028C2 (de) * 1992-02-03 1997-08-14 Hitachi Ltd Projektionsbelichtungsgerät
JPH0684746A (ja) * 1992-03-09 1994-03-25 Hitachi Ltd 投影露光装置及びパタン形成方法
EP0562133B1 (en) * 1992-03-23 1998-02-25 Erland Torbjörn Sandström Method and apparatus for forming an image
JP2889047B2 (ja) * 1992-05-28 1999-05-10 三菱電機株式会社 反射型フォトマスクの製造方法，反射型フォトマスク及びそれを用いた半導体基板の露光方法
US5329336A (en) * 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
JP2895703B2 (ja) * 1992-07-14 1999-05-24 三菱電機株式会社 露光装置およびその露光装置を用いた露光方法
DE4303258A1 (de) * 1993-02-04 1994-08-11 Kurt Dipl Ing Plach Haltestangen und Verfahren zu ihrer Herstellung

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Publication number Publication date
DE4430253C2 (de) 2003-06-18
KR0153221B1 (ko) 1998-11-02
US5642183A (en) 1997-06-24
DE4430253A1 (de) 1995-03-02

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