JPS6267547A - ホトマスク - Google Patents

ホトマスク

Info

Publication number
JPS6267547A
JPS6267547A JP60206664A JP20666485A JPS6267547A JP S6267547 A JPS6267547 A JP S6267547A JP 60206664 A JP60206664 A JP 60206664A JP 20666485 A JP20666485 A JP 20666485A JP S6267547 A JPS6267547 A JP S6267547A
Authority
JP
Japan
Prior art keywords
pattern
opening pattern
opening
light
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60206664A
Other languages
English (en)
Other versions
JPH0690505B2 (ja
Inventor
Tsuneo Terasawa
恒男 寺澤
Shigeo Moriyama
森山　茂夫
Toshishige Kurosaki
利栄 黒崎
Yoshio Kawamura
河村　喜雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20666485A priority Critical patent/JPH0690505B2/ja
Publication of JPS6267547A publication Critical patent/JPS6267547A/ja
Publication of JPH0690505B2 publication Critical patent/JPH0690505B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の利用分野〕 この発明は縮小投影露光装置の原画として用いるホトマ
スクに関するものである。
〔発明の背景〕
第４図（ａ）は従来のホトマスクの一部を示す断面図で
ある。図において、１はガラス基板、２はガラス基板１
上に設けられたＣｒ等からなる遮光膜、３．４は遮光膜
２を部分的に除去した開口パタンで、開口パタン３は孤
立していて、その寸法は縮小投影露光装置の解像限界に
近い値であり、また開口パタン４の寸法は比較的大きい
。
このようなホトマスクを用いて縮小投影露光装置により
ウェハ上にパタンを転写する場合には、ホトマスクを透
過する光の強度分布は第４図（ｂ）に示すようになるが
、露光光学系が高周波の空間周波数成分を伝達できない
ため、ウェハ上の強度分布は第４図（Ｃ）に示すように
なり、開口パタン３を透過した光のコントラストが低く
なる。一方、半導体製造工程においては、パタン転写の
ために所定値以上のコントラストを得る必要がある。
このため、開口−パタン３を透過した光のコントラスト
を大きくするために、露光量を多くすることが考えられ
るが、この場合には開口パタン４に対する露光量が多す
ぎるため、第４図（ｄ）に示すように開口パタン４の転
写パタンの寸法が大きくなってしまう。
〔発明の目的〕
この発明は上述の問題点を解決するためになされたもの
で、解像限界に近い微小な孤立開口パタンを透過した光
のコントラストを大きくすることができるとともに、そ
の他の開口パタンを高い寸法精度でウェハ上に転写する
ことができるホトマスクを提供することを目的とする。
〔発明の概要〕
この目的を達成するため、この発明においては、透明基
板上に遮光膜を設け、その遮光膜を部分的に除去した開
口パタンを形成したホトマスクにおいて、上記開口パタ
ンの少なくとも一つに微細な遮光パタンを複数個配置す
る。
〔発明の実施例〕
第１図はこの発明に係るホトマスクの一部を示す断面図
、第２図は第１図に示したホトマスクのパタンを示す図
である。図に示すように、開口パタン４には転写可能な
寸法より小さい寸法の微細な遮光パタン５が多数個配置
されており、遮光パタン５はパタンとして転写すること
はなく、開口パタン４を透過する光量を減らす作用を行
なう。
この結果、開口パタン４の透過率は開口パタン３の透過
率より小さくなる。このため、開口パタン３に合わせて
露光量を多くしたとしても、開口パタン４の転写パタン
の寸法が大きくなることはない。なお、１／１０縮小投
影露光装置用のホトマスクでは、遮光パタン５の寸法は
１〜２−程度でよく、通常のレティクルパタン描画法で
容易に形成できる。また、開口パタン４の寸法に応じて
透過率を変化させたい場合には、遮光パタン５の配置密
度を調整すればよい。
ところで、ホトマスク上に周期的な開口パタンが存在す
るとき、その周期的な開口パタンの一個おきの開口部を
透過する照明光の位相を変化させると解像度が向上する
ことが知られており、たとえば露光波長λ”　３６５ｎ
ｍ、縮小レンズの開口数ＮＡ＝０．４である１／１０縮
小投影露光装置を用いた場合には、ウェハ上で０．６μ
ピツチ（開口部０．３ｆｉ　。
遮光部０．３７ｍ）の周期的な開口パタンの転写が可能
となる。しかし、０．３７ｘの孤立開口パタンと０．３
ｐの周期的な開口パタンとでは適切な露光量が異なり、
孤立開口パタンに合わせて露光量を多くすると、周期的
な開口パタンの開口部が遮光部より大きく転写され１寸
法端度の劣化を招く。そこで。
第３図に示すように、照明光の位相を１８０’変える位
相シフト層８を設けた周期的な開口パタン７に微細な遮
光パタン５を多数配置して、開ロバメン７の透過率を約
４０％下げ、孤立開口パタン３については何らパタンを
設けないようにした。そして、開口パタン３に適切な露
光量で露光した結果。
周期的な開口パタン７と開口パタン３との両方を精度よ
く転写することができるようになった。
〔発明の効果〕
以上説明したように、この発明に係るホトマスクにおい
ては、解像限界に近い微小な孤立開口パタンを透過した
光のコントラストを大きくすることができるとともに、
その他の開口パタンの転写パタンの寸法精度を向上する
ことができるから、解像限界に近い微小な開口パタンと
その他の開口パタンとの両方を寸法精度を劣化させるこ
となく転写することができる。このように、この発明の
効果は顕著である。
【図面の簡単な説明】
第１図はこの発明に係るホトマスクの一部を示す断面図
、第２図は第１図に示したホトマスクのパタンを示す図
、第３図はこの発明に係る他のホトマスクの一部を示す
断面図、第４図（ａ）は従来のホトマスクを示す図、第
４図（ｂ）は第４図（、）に示したホトマスク上の３虫
壌分布を示すグラフ、第４図（ｃ）、（ｄ）は第４図（
ａ）に示したホトマスクを使用した場合のウェハ上の強
ノ「分布を示すグラフである。

Claims (2)

    【特許請求の範囲】
  1. （１）透明基板上に遮光膜を設け、その遮光膜を部分的
    に除去した開口パタンを形成したホトマスクにおいて、
    上記開口パタンの少なくとも一つに微細な遮光パタンを
    複数個配置したことを特徴とするホトマスク。
  2. （２）上記遮光パタンを周期的な開口パタンに配置し、
    その周期的な開口パタンに一個おきに位相シフト層を設
    けたことを特徴とする特許請求の範囲第１項記載のホト
    マスク。
JP20666485A 1985-09-20 1985-09-20 ホトマスク Expired - Fee Related JPH0690505B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20666485A JPH0690505B2 (ja) 1985-09-20 1985-09-20 ホトマスク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20666485A JPH0690505B2 (ja) 1985-09-20 1985-09-20 ホトマスク

Publications (2)

Publication Number Publication Date
JPS6267547A true JPS6267547A (ja) 1987-03-27
JPH0690505B2 JPH0690505B2 (ja) 1994-11-14

Family

ID=16527088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20666485A Expired - Fee Related JPH0690505B2 (ja) 1985-09-20 1985-09-20 ホトマスク

Country Status (1)

Country Link
JP (1) JPH0690505B2 (ja)

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275895A (en) * 1991-06-18 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing phase-shifting mask
US5358807A (en) * 1988-11-22 1994-10-25 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5455144A (en) * 1990-03-20 1995-10-03 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
JPH08213314A (ja) * 1995-11-21 1996-08-20 Hitachi Ltd 集積回路装置の製造方法
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
WO2002003140A1 (en) * 2000-07-05 2002-01-10 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6436590B2 (en) 1996-09-18 2002-08-20 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6523165B2 (en) 2001-07-13 2003-02-18 Numerical Technologies, Inc. Alternating phase shift mask design conflict resolution
US6524752B1 (en) 2000-07-05 2003-02-25 Numerical Technologies, Inc. Phase shift masking for intersecting lines
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6553560B2 (en) 2001-04-03 2003-04-22 Numerical Technologies, Inc. Alleviating line end shortening in transistor endcaps by extending phase shifters
US6551750B2 (en) 2001-03-16 2003-04-22 Numerical Technologies, Inc. Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks
US6566019B2 (en) 2001-04-03 2003-05-20 Numerical Technologies, Inc. Using double exposure effects during phase shifting to control line end shortening
US6569583B2 (en) 2001-05-04 2003-05-27 Numerical Technologies, Inc. Method and apparatus for using phase shifter cutbacks to resolve phase shifter conflicts
US6573010B2 (en) 2001-04-03 2003-06-03 Numerical Technologies, Inc. Method and apparatus for reducing incidental exposure by using a phase shifter with a variable regulator
US6584610B1 (en) 2000-10-25 2003-06-24 Numerical Technologies, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US6593038B2 (en) 2001-05-04 2003-07-15 Numerical Technologies, Inc. Method and apparatus for reducing color conflicts during trim generation for phase shifters
US6605481B1 (en) 2002-03-08 2003-08-12 Numerical Technologies, Inc. Facilitating an adjustable level of phase shifting during an optical lithography process for manufacturing an integrated circuit
US6622288B1 (en) 2000-10-25 2003-09-16 Numerical Technologies, Inc. Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
US6635393B2 (en) 2001-03-23 2003-10-21 Numerical Technologies, Inc. Blank for alternating PSM photomask with charge dissipation layer
US6664009B2 (en) 2001-07-27 2003-12-16 Numerical Technologies, Inc. Method and apparatus for allowing phase conflicts in phase shifting mask and chromeless phase edges
US6681379B2 (en) 2000-07-05 2004-01-20 Numerical Technologies, Inc. Phase shifting design and layout for static random access memory
US6698007B2 (en) 2001-10-09 2004-02-24 Numerical Technologies, Inc. Method and apparatus for resolving coloring conflicts between phase shifters
US6704921B2 (en) 2002-04-03 2004-03-09 Numerical Technologies, Inc. Automated flow in PSM phase assignment
US6721938B2 (en) 2001-06-08 2004-04-13 Numerical Technologies, Inc. Optical proximity correction for phase shifting photolithographic masks
US6733929B2 (en) 2000-07-05 2004-05-11 Numerical Technologies, Inc. Phase shift masking for complex patterns with proximity adjustments
US6735752B2 (en) 2001-09-10 2004-05-11 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process features created by interactions between cells
US6738958B2 (en) 2001-09-10 2004-05-18 Numerical Technologies, Inc. Modifying a hierarchical representation of a circuit to process composite gates
US6737198B2 (en) 1999-01-13 2004-05-18 Renesas Technology Corp. Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US6785879B2 (en) 2002-06-11 2004-08-31 Numerical Technologies, Inc. Model-based data conversion
US6787271B2 (en) 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US6811935B2 (en) 2000-07-05 2004-11-02 Numerical Technologies, Inc. Phase shift mask layout process for patterns including intersecting line segments
US6821689B2 (en) 2002-09-16 2004-11-23 Numerical Technologies Using second exposure to assist a PSM exposure in printing a tight space adjacent to large feature
US6852471B2 (en) 2001-06-08 2005-02-08 Numerical Technologies, Inc. Exposure control for phase shifting photolithographic masks
US6866971B2 (en) 2000-09-26 2005-03-15 Synopsys, Inc. Full phase shifting mask in damascene process
JP2005084287A (ja) * 2003-09-08 2005-03-31 Toppan Printing Co Ltd 位相シフトマスクの製造方法及び位相シフトマスク並びに半導体素子の製造方法
US6901575B2 (en) 2000-10-25 2005-05-31 Numerical Technologies, Inc. Resolving phase-shift conflicts in layouts using weighted links between phase shifters
US6978436B2 (en) 2000-07-05 2005-12-20 Synopsys, Inc. Design data format and hierarchy management for phase processing
US6981240B2 (en) 2001-11-15 2005-12-27 Synopsys, Inc. Cutting patterns for full phase shifting masks
US7028285B2 (en) 2000-07-05 2006-04-11 Synopsys, Inc. Standard cell design incorporating phase information
EP1649323A2 (en) * 2003-07-18 2006-04-26 Uclt Ltd. Method for correcting critical dimension variations in photomasks
US7083879B2 (en) 2001-06-08 2006-08-01 Synopsys, Inc. Phase conflict resolution for photolithographic masks
US7122281B2 (en) 2002-02-26 2006-10-17 Synopsys, Inc. Critical dimension control using full phase and trim masks
US7178128B2 (en) 2001-07-13 2007-02-13 Synopsys Inc. Alternating phase shift mask design conflict resolution
US7236916B2 (en) 2000-12-20 2007-06-26 Synopsys, Inc. Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask

Cited By (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5358807A (en) * 1988-11-22 1994-10-25 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6458497B2 (en) 1988-11-22 2002-10-01 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5484671A (en) * 1988-11-22 1996-01-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6733933B2 (en) 1988-11-22 2004-05-11 Renesas Technology Corporation Mask for manufacturing semiconductor device and method of manufacture thereof
US6420075B1 (en) 1988-11-22 2002-07-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US7008736B2 (en) 1988-11-22 2006-03-07 Renesas Technology Corp. Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region
US5830606A (en) * 1988-11-22 1998-11-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5948574A (en) * 1988-11-22 1999-09-07 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6106981A (en) * 1988-11-22 2000-08-22 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6309800B1 (en) 1990-03-20 2001-10-30 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US6153357A (en) * 1990-03-20 2000-11-28 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US6794118B2 (en) 1990-03-20 2004-09-21 Renesas Technology Corp. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5753416A (en) * 1990-03-20 1998-05-19 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5667941A (en) * 1990-03-20 1997-09-16 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5455144A (en) * 1990-03-20 1995-10-03 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5275895A (en) * 1991-06-18 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing phase-shifting mask
JPH08213314A (ja) * 1995-11-21 1996-08-20 Hitachi Ltd 集積回路装置の製造方法
US6436590B2 (en) 1996-09-18 2002-08-20 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6818385B2 (en) 1996-09-18 2004-11-16 Numerical Technologies, Inc. Phase shifting circuit manufacture method and apparatus
US6566023B2 (en) 1996-09-18 2003-05-20 Numerical Technology, Inc. Phase shifting circuit manufacture method and apparatus
US6737198B2 (en) 1999-01-13 2004-05-18 Renesas Technology Corp. Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
US6733929B2 (en) 2000-07-05 2004-05-11 Numerical Technologies, Inc. Phase shift masking for complex patterns with proximity adjustments
US7500217B2 (en) 2000-07-05 2009-03-03 Synopsys, Inc. Handling of flat data for phase processing including growing shapes within bins to identify clusters
US7028285B2 (en) 2000-07-05 2006-04-11 Synopsys, Inc. Standard cell design incorporating phase information
WO2002003140A1 (en) * 2000-07-05 2002-01-10 Numerical Technologies, Inc. Phase shift masking for complex patterns
US6978436B2 (en) 2000-07-05 2005-12-20 Synopsys, Inc. Design data format and hierarchy management for phase processing
US7132203B2 (en) 2000-07-05 2006-11-07 Synopsys, Inc. Phase shift masking for complex patterns with proximity adjustments
US7348108B2 (en) 2000-07-05 2008-03-25 Synopsys, Inc. Design and layout of phase shifting photolithographic masks
US6503666B1 (en) 2000-07-05 2003-01-07 Numerical Technologies, Inc. Phase shift masking for complex patterns
US8977989B2 (en) 2000-07-05 2015-03-10 Synopsys, Inc. Handling of flat data for phase processing including growing shapes within bins to identify clusters
US6610449B2 (en) 2000-07-05 2003-08-26 Numerical Technologies, Inc. Phase shift masking for “double-T” intersecting lines
US6811935B2 (en) 2000-07-05 2004-11-02 Numerical Technologies, Inc. Phase shift mask layout process for patterns including intersecting line segments
US6787271B2 (en) 2000-07-05 2004-09-07 Numerical Technologies, Inc. Design and layout of phase shifting photolithographic masks
US7435513B2 (en) 2000-07-05 2008-10-14 Synopsys, Inc. Design and layout of phase shifting photolithographic masks
US6681379B2 (en) 2000-07-05 2004-01-20 Numerical Technologies, Inc. Phase shifting design and layout for static random access memory
US6777141B2 (en) 2000-07-05 2004-08-17 Numerical Technologies, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US7585595B2 (en) 2000-07-05 2009-09-08 Synopsys, Inc. Phase shift mask including sub-resolution assist features for isolated spaces
US6524752B1 (en) 2000-07-05 2003-02-25 Numerical Technologies, Inc. Phase shift masking for intersecting lines
US6541165B1 (en) 2000-07-05 2003-04-01 Numerical Technologies, Inc. Phase shift mask sub-resolution assist features
US6866971B2 (en) 2000-09-26 2005-03-15 Synopsys, Inc. Full phase shifting mask in damascene process
US7659042B2 (en) 2000-09-26 2010-02-09 Synopsys, Inc. Full phase shifting mask in damascene process
US7534531B2 (en) 2000-09-26 2009-05-19 Synopsys, Inc. Full phase shifting mask in damascene process
US6539521B1 (en) 2000-09-29 2003-03-25 Numerical Technologies, Inc. Dissection of corners in a fabrication layout for correcting proximity effects
US6584610B1 (en) 2000-10-25 2003-06-24 Numerical Technologies, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US7827518B2 (en) 2000-10-25 2010-11-02 Synopsys, Inc. Incrementally resolved phase-shift conflicts in layouts for phase-shifted features
US6622288B1 (en) 2000-10-25 2003-09-16 Numerical Technologies, Inc. Conflict sensitive compaction for resolving phase-shift conflicts in layouts for phase-shifted features
US7216331B2 (en) 2000-10-25 2007-05-08 Synopsys, Inc. Resolving phase-shift conflicts in layouts using weighted links between phase shifters
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