KR940702901A - 사전 선택된 열 팽창 계수값을 갖는 폴리이미드 필름의 제조방법 - Google Patents

사전 선택된 열 팽창 계수값을 갖는 폴리이미드 필름의 제조방법

Info

Publication number
KR940702901A
KR940702901A KR1019940701403A KR19940701403A KR940702901A KR 940702901 A KR940702901 A KR 940702901A KR 1019940701403 A KR1019940701403 A KR 1019940701403A KR 19940701403 A KR19940701403 A KR 19940701403A KR 940702901 A KR940702901 A KR 940702901A
Authority
KR
South Korea
Prior art keywords
cte
curing
baking
preselected
temperature
Prior art date
Application number
KR1019940701403A
Other languages
English (en)
Korean (ko)
Inventor
마이클 티. 포티거
브리안 칼 오만
존 씨. 코번
티모시 도날드 브리잔
Original Assignee
미리암 디. 메코너헤이
이. 아이. 듀폰 디 네모아 앤드 캄파니(E. I. Du Pont De Nemours And Company)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미리암 디. 메코너헤이, 이. 아이. 듀폰 디 네모아 앤드 캄파니(E. I. Du Pont De Nemours And Company) filed Critical 미리암 디. 메코너헤이
Publication of KR940702901A publication Critical patent/KR940702901A/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics
    • H01G4/18Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312Organic layers, e.g. photoresist
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894Materials of the insulating layers or coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Moulding By Coating Moulds (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
KR1019940701403A 1991-10-29 1992-10-29 사전 선택된 열 팽창 계수값을 갖는 폴리이미드 필름의 제조방법 KR940702901A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/784.497 1991-10-29
US07/784,497 US5166292A (en) 1991-10-29 1991-10-29 Process for preparing a polyimide film with a preselected value for CTE
PCT/US1992/009217 WO1993009167A1 (en) 1991-10-29 1992-10-29 Process for preparing a polyimide film with a preselected value for cte

Publications (1)

Publication Number Publication Date
KR940702901A true KR940702901A (ko) 1994-09-17

Family

ID=25132628

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940701403A KR940702901A (ko) 1991-10-29 1992-10-29 사전 선택된 열 팽창 계수값을 갖는 폴리이미드 필름의 제조방법

Country Status (6)

Country Link
US (1) US5166292A (ja)
EP (1) EP0610425B1 (ja)
JP (1) JP2638304B2 (ja)
KR (1) KR940702901A (ja)
DE (1) DE69216424T2 (ja)
WO (1) WO1993009167A1 (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474054B1 (en) * 1990-08-27 1995-12-06 E.I. Du Pont De Nemours And Company Flexible multi-layer polyimide film laminates and preparation thereof
US5393864A (en) * 1993-04-26 1995-02-28 E. I. Du Pont De Nemours And Company Wet-etchable random polyimide copolymer for multichip module applications
US5716677A (en) * 1996-03-21 1998-02-10 Ohio Aerospace Institute Protective coatings for polyimide composites
US5753306A (en) * 1996-09-11 1998-05-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming a composite coating with particle materials that are readily dispersed in a sprayable polyimide solution
US5889139A (en) * 1997-02-28 1999-03-30 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Dimensionally stable ether-containing polyimide copolymers
US7285321B2 (en) * 2003-11-12 2007-10-23 E.I. Du Pont De Nemours And Company Multilayer substrates having at least two dissimilar polyimide layers, useful for electronics-type applications, and compositions relating thereto
KR20060045208A (ko) * 2004-11-12 2006-05-17 삼성테크윈 주식회사 반도체 팩키지용 회로기판 및 이의 제조방법
CN100344699C (zh) * 2005-09-27 2007-10-24 黄堂杰 聚酰胺酸组合物及聚酰亚胺/铜箔积层材料
KR101227317B1 (ko) * 2007-07-31 2013-01-28 코오롱인더스트리 주식회사 열안정성이 개선된 폴리이미드 필름
WO2009142248A1 (ja) * 2008-05-20 2009-11-26 宇部興産株式会社 芳香族ポリイミドフィルム、積層体および太陽電池
JP5572164B2 (ja) * 2008-09-26 2014-08-13 ピクシウム ヴィジョン ソシエテ アノニム 電極アレイおよびその製造方法
JP5621768B2 (ja) * 2009-04-14 2014-11-12 宇部興産株式会社 メタライジング用のポリイミドフィルム、これらの製造方法、及び金属積層ポリイミドフィルム
US20110220179A1 (en) * 2009-09-17 2011-09-15 E. I. Du Pont De Nemours And Company Assemblies comprising a thermally and dimensionally stable polyimide film, an electrode and an absorber layer, and methods relating thereto
TWI409016B (zh) * 2011-03-09 2013-09-11 Lextar Electronics Corp 載板結構及其製造方法
KR101646283B1 (ko) * 2011-12-27 2016-08-08 코오롱인더스트리 주식회사 폴리아믹산 용액
KR20140083233A (ko) * 2012-12-26 2014-07-04 코오롱인더스트리 주식회사 폴리아믹산 용액, 이미드화막 및 표시소자
JP6152688B2 (ja) * 2013-04-22 2017-06-28 宇部興産株式会社 ポリアミック酸溶液組成物、及びそれを用いたポリイミド膜の製造方法
TWI561558B (en) * 2015-12-09 2016-12-11 Taiflex Scient Co Ltd Polyimide polymer, polyimide film, and flexible copper-coated laminate
KR20170115339A (ko) * 2016-04-07 2017-10-17 주식회사 엘지화학 내열성이 개선된 폴리이미드 필름 및 그 제조방법
CN107474251A (zh) * 2017-08-18 2017-12-15 南京工业大学 一种膜电容器复合介电薄膜的制备方法
CN110272549B (zh) * 2018-03-16 2020-09-15 北京化工大学 制备聚酰亚胺膜的方法
TW201943798A (zh) 2018-04-06 2019-11-16 美商杜邦股份有限公司 供使用於電子裝置之聚合物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0133533B1 (en) * 1983-08-01 1993-04-21 Hitachi, Ltd. Low thermal expansion resin material for a wiring insulating film.
US4937133A (en) * 1988-03-28 1990-06-26 Nippon Steel Chemical Co., Ltd. Flexible base materials for printed circuits
JPH0760935B2 (ja) * 1988-03-28 1995-06-28 新日鐵化学株式会社 フレキシブルプリント基板の製造法

Also Published As

Publication number Publication date
DE69216424T2 (de) 1997-07-17
EP0610425A1 (en) 1994-08-17
DE69216424D1 (de) 1997-02-13
JP2638304B2 (ja) 1997-08-06
JPH07500139A (ja) 1995-01-05
EP0610425B1 (en) 1997-01-02
US5166292A (en) 1992-11-24
WO1993009167A1 (en) 1993-05-13

Similar Documents

Publication Publication Date Title
KR940702901A (ko) 사전 선택된 열 팽창 계수값을 갖는 폴리이미드 필름의 제조방법
KR0131457B1 (ko) 저흡습성, 고접착성 실리콘 함유 폴리이미드 및 이의 전구체의 제조방법
US4731287A (en) Process for producing polyimide/metallic foil composite film
ATE401672T1 (de) Herstellung einer polymeren vorrichtung
JPS57209608A (en) Preparation of composite polyimide separation film
CN110128652B (zh) 交联型聚酰亚胺、聚酰亚胺薄膜及其制备方法、oled器件
Elsner Residual stress and thermal expansion of spun‐on polyimide films
CN108779272A (zh) 改善了耐热性的聚酰亚胺膜及其制造方法
KR920017528A (ko) 다층 배선 구조체 및 다층화 방법
US4258079A (en) Preparation of continuous films of diacetylenic polymers
DE60022746D1 (de) Durch polymerabbau erhältliches nano-poröses material mit niedriger dielektrizitätskonstante
DE69717319D1 (de) Verfahren zur galvanischen herstellung eines rakels
JPS6178463A (ja) 合成樹脂被膜の形成方法
JPS60254034A (ja) パタ−ン形成方法
Famsworth et al. Variable frequency microwave curing of photosensitive polyimides
ATE271929T1 (de) Verfahren zur haftfesten beschichtung von substraten mit korrosiven optischen schichten
JPH0484488A (ja) フレキシブルプリント配線板用基板の製造方法
JP2000014277A (ja) 釣竿およびその竿管の製造方法
SU744221A1 (ru) Фольговый тензорезистор
ATE20081T1 (de) Methode zur herstellung eines polymeren ueberzugsmittels.
JP2004177405A (ja) 電気容量式湿度検知素子及び電気容量式湿度検知素子の製造方法
JPH047130A (ja) 芳香族ポリアミドフィルムの熱処理方法
RU2021127613A (ru) Пленка
JPH01265589A (ja) 印刷抵抗体の形成方法
SU451218A1 (ru) Способ изготовлени фольгированного диэлектрика

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid