ATE401672T1 - Herstellung einer polymeren vorrichtung - Google Patents
Herstellung einer polymeren vorrichtungInfo
- Publication number
- ATE401672T1 ATE401672T1 AT04732346T AT04732346T ATE401672T1 AT E401672 T1 ATE401672 T1 AT E401672T1 AT 04732346 T AT04732346 T AT 04732346T AT 04732346 T AT04732346 T AT 04732346T AT E401672 T1 ATE401672 T1 AT E401672T1
- Authority
- AT
- Austria
- Prior art keywords
- polymer
- crosslinking moiety
- preparation
- oligomer
- mol
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C247/00—Compounds containing azido groups
- C07C247/16—Compounds containing azido groups with azido groups bound to carbon atoms of six-membered aromatic rings of a carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
- C07C311/30—Sulfonamides, the carbon skeleton of the acid part being further substituted by singly-bound nitrogen atoms, not being part of nitro or nitroso groups
- C07C311/37—Sulfonamides, the carbon skeleton of the acid part being further substituted by singly-bound nitrogen atoms, not being part of nitro or nitroso groups having the sulfur atom of at least one of the sulfonamide groups bound to a carbon atom of a six-membered aromatic ring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/695—Compositions containing azides as the photosensitive substances
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0310858A GB0310858D0 (en) | 2003-05-12 | 2003-05-12 | Polymer transistor |
GB0315731A GB0315731D0 (en) | 2003-07-04 | 2003-07-04 | Manufacture of a polymer device |
GB0408539A GB0408539D0 (en) | 2004-04-16 | 2004-04-16 | Polymer transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE401672T1 true ATE401672T1 (de) | 2008-08-15 |
Family
ID=33436941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04732346T ATE401672T1 (de) | 2003-05-12 | 2004-05-12 | Herstellung einer polymeren vorrichtung |
Country Status (7)
Country | Link |
---|---|
US (1) | US8530269B2 (de) |
EP (1) | EP1631995B1 (de) |
JP (1) | JP4500304B2 (de) |
KR (1) | KR101172526B1 (de) |
AT (1) | ATE401672T1 (de) |
DE (1) | DE602004015103D1 (de) |
WO (1) | WO2004100282A2 (de) |
Families Citing this family (70)
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EP1491568A1 (de) * | 2003-06-23 | 2004-12-29 | Covion Organic Semiconductors GmbH | Halbleitende Polymere |
DE10340711A1 (de) * | 2003-09-04 | 2005-04-07 | Covion Organic Semiconductors Gmbh | Elektronische Vorrichtung enthaltend organische Halbleiter |
US7589228B2 (en) | 2004-05-28 | 2009-09-15 | Nippon Shokubai Co., Ltd. | Fluorine-containing compound |
GB0423528D0 (en) * | 2004-10-22 | 2004-11-24 | Cambridge Display Tech Ltd | Monomer for making a crosslinked polymer |
US7321133B2 (en) * | 2004-11-17 | 2008-01-22 | Plextronics, Inc. | Heteroatomic regioregular poly(3-substitutedthiophenes) as thin film conductors in diodes which are not light emitting or photovoltaic |
KR101219035B1 (ko) * | 2005-05-03 | 2013-01-07 | 삼성디스플레이 주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101102158B1 (ko) * | 2005-05-11 | 2012-01-02 | 삼성전자주식회사 | 신규한 유기 고분자 반도체, 이를 이용한 유기 고분자반도체 박막의 형성방법 및 이를 이용한 유기박막트랜지스터 |
KR20080007611A (ko) | 2005-05-17 | 2008-01-22 | 스미또모 가가꾸 가부시키가이샤 | 유기 전계 발광용 고분자 조성물 |
CA2511354A1 (en) * | 2005-07-04 | 2007-01-04 | National University Of Singapore | Radiation crosslinkers |
KR20080071159A (ko) | 2005-11-30 | 2008-08-01 | 스미또모 가가꾸 가부시키가이샤 | 백색 유기 전계 발광 소자 |
JP5125110B2 (ja) * | 2006-07-19 | 2013-01-23 | 東レ株式会社 | 電界効果型トランジスタ |
US7821637B1 (en) | 2007-02-22 | 2010-10-26 | J.A. Woollam Co., Inc. | System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing |
US20090122278A1 (en) * | 2007-11-13 | 2009-05-14 | Texas Instruments Incorporated | Non-specular folding mirror and a system of using the same |
GB0811199D0 (en) * | 2008-06-18 | 2008-07-23 | Cambridge Entpr Ltd | Electro-optic diode devices |
KR101153037B1 (ko) | 2008-09-19 | 2012-06-04 | 파나소닉 주식회사 | 유기 일렉트로 루미네슨스 소자 및 그 제조 방법 |
JP5138542B2 (ja) | 2008-10-24 | 2013-02-06 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP5357194B2 (ja) | 2009-02-10 | 2013-12-04 | パナソニック株式会社 | 発光素子、発光素子を備えた発光装置および発光素子の製造方法 |
WO2010092797A1 (ja) | 2009-02-10 | 2010-08-19 | パナソニック株式会社 | 発光素子、表示装置、および発光素子の製造方法 |
CN102308671B (zh) | 2009-02-10 | 2015-01-21 | 松下电器产业株式会社 | 发光元件的制造方法和发光元件、以及发光装置的制造方法和发光装置 |
JP5437736B2 (ja) | 2009-08-19 | 2014-03-12 | パナソニック株式会社 | 有機el素子 |
JP4659141B1 (ja) | 2009-08-31 | 2011-03-30 | パナソニック株式会社 | 発光素子とその製造方法、および発光装置 |
DE102009054023A1 (de) | 2009-11-19 | 2011-05-26 | Tu Darmstadt | Verfahren zur Herstellung von (elektro) lumineszierenden, photoaktiven und oder elektrisch (halb)leitenden Polymeren |
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JP5543599B2 (ja) | 2010-08-06 | 2014-07-09 | パナソニック株式会社 | 発光素子の製造方法 |
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JP5809234B2 (ja) | 2011-02-25 | 2015-11-10 | 株式会社Joled | 有機el表示パネルおよび有機el表示装置 |
JP5866783B2 (ja) * | 2011-03-25 | 2016-02-17 | セイコーエプソン株式会社 | 回路基板の製造方法 |
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JPWO2012153445A1 (ja) | 2011-05-11 | 2014-07-28 | パナソニック株式会社 | 有機el表示パネルおよび有機el表示装置 |
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US9662617B2 (en) | 2013-02-21 | 2017-05-30 | The Regents Of The University Of California | Universal scalable and cost-effective surface modifications |
WO2015004563A1 (en) * | 2013-07-08 | 2015-01-15 | Basf Se | Azide-based crosslinking agents |
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CA3083976A1 (en) | 2017-12-01 | 2019-06-06 | The Regents Of The University Of California | Biofouling resistant coatings and methods of making and using the same |
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KR102457044B1 (ko) | 2018-06-26 | 2022-10-21 | 주식회사 클랩 | 유전체로서의 비닐에테르계 고분자 |
KR20200078804A (ko) * | 2018-12-21 | 2020-07-02 | 삼성디스플레이 주식회사 | 아지드 화합물, 이를 포함한 유기 발광 소자 및 이의 제조 방법 |
EP3980088A4 (de) | 2019-06-05 | 2023-06-14 | The Regents of the University of California | Bewuchsresistente beschichtungen sowie verfahren zu ihrer herstellung und verwendung |
US11860536B2 (en) * | 2020-06-10 | 2024-01-02 | Unist (Ulsan National Institute Of Science And Technology) | Three-dimensional crosslinker composition and method of manufacturing electronic devices using the same |
KR102509099B1 (ko) * | 2020-06-10 | 2023-03-14 | 울산과학기술원 | 3차원 가교제용 조성물 및 이를 이용한 전자 소자 제조 방법 |
KR20230115753A (ko) * | 2022-01-27 | 2023-08-03 | 울산과학기술원 | 도전성 조성물, 도전체, 도전체를 포함한 전극 및 전자 소자 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2637469B2 (ja) * | 1987-06-04 | 1997-08-06 | キヤノン株式会社 | 高分子液晶素子 |
GB8909011D0 (en) | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
US5408109A (en) * | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
GB9215928D0 (en) | 1992-07-27 | 1992-09-09 | Cambridge Display Tech Ltd | Manufacture of electroluminescent devices |
US5531716A (en) * | 1993-09-29 | 1996-07-02 | Hercules Incorporated | Medical devices subject to triggered disintegration |
US5682043A (en) * | 1994-06-28 | 1997-10-28 | Uniax Corporation | Electrochemical light-emitting devices |
US5523555A (en) * | 1994-09-14 | 1996-06-04 | Cambridge Display Technology | Photodetector device having a semiconductive conjugated polymer |
GB9423692D0 (en) | 1994-11-23 | 1995-01-11 | Philips Electronics Uk Ltd | A photoresponsive device |
EP0800563B1 (de) | 1994-12-28 | 2000-07-12 | Cambridge Display Technology Limited | Polymere für optische vorrichtungen |
CN1229415C (zh) | 1995-07-28 | 2005-11-30 | 陶氏环球技术公司 | 2,7-芳基-9-取代的芴和9-取代的芴的低聚物和聚合物 |
JP3899566B2 (ja) | 1996-11-25 | 2007-03-28 | セイコーエプソン株式会社 | 有機el表示装置の製造方法 |
US6309763B1 (en) | 1997-05-21 | 2001-10-30 | The Dow Chemical Company | Fluorene-containing polymers and electroluminescent devices therefrom |
GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
US6107452A (en) * | 1998-10-09 | 2000-08-22 | International Business Machines Corporation | Thermally and/or photochemically crosslinked electroactive polymers in the manufacture of opto-electronic devices |
US6236774B1 (en) | 1999-03-22 | 2001-05-22 | Gemfire Corporation | Optoelectronic and photonic devices formed of materials which inhibit degradation and failure |
JP2002170667A (ja) * | 2000-11-30 | 2002-06-14 | Hitachi Ltd | 有機エレクトロルミネッセンス素子、その製造方法及び画像表示装置 |
US7049044B2 (en) * | 2002-12-19 | 2006-05-23 | The University Of North Carolina At Charlotte | Nanocomposite negative resists for next generation lithographies |
WO2003095586A1 (en) | 2002-05-10 | 2003-11-20 | Cambridge Display Technology Limited | Polymers their preparation and uses |
US20050146263A1 (en) * | 2003-09-25 | 2005-07-07 | Kelly Stephen M. | Lighting elements, devices and methods |
-
2004
- 2004-05-12 JP JP2006506242A patent/JP4500304B2/ja active Active
- 2004-05-12 DE DE602004015103T patent/DE602004015103D1/de active Active
- 2004-05-12 EP EP04732346A patent/EP1631995B1/de not_active Not-in-force
- 2004-05-12 KR KR1020057021603A patent/KR101172526B1/ko active IP Right Grant
- 2004-05-12 US US10/556,841 patent/US8530269B2/en active Active
- 2004-05-12 WO PCT/GB2004/002078 patent/WO2004100282A2/en active IP Right Grant
- 2004-05-12 AT AT04732346T patent/ATE401672T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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WO2004100282A3 (en) | 2005-01-20 |
KR101172526B1 (ko) | 2012-08-13 |
DE602004015103D1 (de) | 2008-08-28 |
JP4500304B2 (ja) | 2010-07-14 |
US20070172978A1 (en) | 2007-07-26 |
EP1631995A2 (de) | 2006-03-08 |
JP2007527542A (ja) | 2007-09-27 |
KR20060030025A (ko) | 2006-04-07 |
EP1631995B1 (de) | 2008-07-16 |
US8530269B2 (en) | 2013-09-10 |
WO2004100282A2 (en) | 2004-11-18 |
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