DE602008001879D1 - Verfahren zur herstellung leitfähiger folien sowie in diesem verfahren hergestellte artikel - Google Patents

Verfahren zur herstellung leitfähiger folien sowie in diesem verfahren hergestellte artikel

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Publication number
DE602008001879D1
DE602008001879D1 DE602008001879T DE602008001879T DE602008001879D1 DE 602008001879 D1 DE602008001879 D1 DE 602008001879D1 DE 602008001879 T DE602008001879 T DE 602008001879T DE 602008001879 T DE602008001879 T DE 602008001879T DE 602008001879 D1 DE602008001879 D1 DE 602008001879D1
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DE
Germany
Prior art keywords
array
matrix layer
nanorods
free standing
standing film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008001879T
Other languages
English (en)
Inventor
Carl Fairbank
Mark Fisher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE602008001879D1 publication Critical patent/DE602008001879D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/005—Reinforced macromolecular compounds with nanosized materials, e.g. nanoparticles, nanofibres, nanotubes, nanowires, nanorods or nanolayered materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/041—Carbon nanotubes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2300/00—Characterised by the use of unspecified polymers
    • C08J2300/22—Thermoplastic resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2300/00—Characterised by the use of unspecified polymers
    • C08J2300/24—Thermosetting resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • C08K2003/382—Boron-containing compounds and nitrogen
    • C08K2003/385—Binary compounds of nitrogen with boron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S977/75—Single-walled
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/2913—Rod, strand, filament or fiber
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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DE602008001879T 2007-02-22 2008-01-25 Verfahren zur herstellung leitfähiger folien sowie in diesem verfahren hergestellte artikel Active DE602008001879D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US90280407P 2007-02-22 2007-02-22
PCT/US2008/000977 WO2008103221A1 (en) 2007-02-22 2008-01-25 Process for preparing conductive films and articles prepared using the process

Publications (1)

Publication Number Publication Date
DE602008001879D1 true DE602008001879D1 (de) 2010-09-02

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Country Link
US (3) US8064203B2 (de)
EP (1) EP2115046B1 (de)
JP (1) JP5355423B2 (de)
KR (1) KR20090115794A (de)
CN (2) CN103588984A (de)
AT (1) ATE474876T1 (de)
DE (1) DE602008001879D1 (de)
TW (1) TW200900443A (de)
WO (1) WO2008103221A1 (de)

Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
JP2009537339A (ja) 2006-05-19 2009-10-29 マサチューセッツ・インスティテュート・オブ・テクノロジー ナノ構造強化された複合体およびナノ構造強化方法
US8337979B2 (en) 2006-05-19 2012-12-25 Massachusetts Institute Of Technology Nanostructure-reinforced composite articles and methods
JP5518722B2 (ja) * 2008-09-18 2014-06-11 日東電工株式会社 カーボンナノチューブ集合体
CN101989583B (zh) * 2009-08-05 2013-04-24 清华大学 散热结构及使用该散热结构的散热系统
WO2011111112A1 (ja) * 2010-03-12 2011-09-15 富士通株式会社 放熱構造体およびその製造方法
KR101786951B1 (ko) * 2010-04-23 2017-10-19 삼성전자주식회사 초발수 코팅 조성물, 상기 조성물의 경화물을 포함하는 초발수 코팅층, 및 상기 초발수 코팅층을 포함하는 열교환기
WO2013100123A1 (ja) * 2011-12-28 2013-07-04 東洋紡株式会社 絶縁熱伝導シート
CN103665772A (zh) * 2012-09-12 2014-03-26 南京理工大学 复合环氧树脂的碳纳米管阵列柔性热界面材料的制备方法
US9862604B2 (en) 2013-04-18 2018-01-09 National Research Council Of Canada Boron nitride nanotubes and process for production thereof
JPWO2014203955A1 (ja) * 2013-06-19 2017-02-23 東洋紡株式会社 絶縁熱伝導シート
CN105359282B (zh) * 2013-07-29 2018-01-16 晶元光电股份有限公司 选择性转移半导体元件的方法
US9725571B2 (en) * 2013-08-13 2017-08-08 Mesodynamics, Inc. Method of making nanoporous structures
JP6261352B2 (ja) * 2014-01-23 2018-01-17 新光電気工業株式会社 カーボンナノチューブシート及び半導体装置とカーボンナノチューブシートの製造方法及び半導体装置の製造方法
US20160340482A1 (en) * 2014-02-04 2016-11-24 N12 Technologies, Inc. Articles and Methods for Manufacture of Nanostructure Reinforced Composites
US9482477B2 (en) * 2014-07-28 2016-11-01 Northrop Grumman Systems Corporation Nano-thermal agents for enhanced interfacial thermal conductance
CN109311239A (zh) 2016-05-31 2019-02-05 麻省理工学院 包括非线性细长纳米结构的复合制品以及相关的方法
EP3681942A4 (de) 2017-09-15 2021-05-05 Massachusetts Institute of Technology Verfahren zur herstellung von verbundwerkstoffen mit geringen mängeln
WO2019108616A1 (en) 2017-11-28 2019-06-06 Massachusetts Institute Of Technology Separators comprising elongated nanostructures and associated devices and methods for energy storage and/or use
CN108766627A (zh) * 2018-05-15 2018-11-06 华南理工大学 一种银纳米网格柔性透明电极及其制备方法
WO2020145884A1 (en) * 2019-01-10 2020-07-16 Sembcorp Industries Ltd A method of forming a stretchable conductive carbon nanofilm
CN111909666A (zh) * 2020-08-12 2020-11-10 杭州英希捷科技有限责任公司 基于垂向碳纳米管阵列的非转移式热界面材料及其方法

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214244A (ja) * 1988-06-30 1990-01-18 Toray Dow Corning Silicone Co Ltd 加熱硬化性オルガノポリシロキサン組成物
US5239035A (en) * 1992-04-09 1993-08-24 Dow Corning Corporation Curable organosiloxane gel compositions
EP0956590A1 (de) 1996-04-29 1999-11-17 Parker-Hannifin Corporation Anpassungsfähiges thermisches zwischenlagematerial für elektronischen komponenten
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
WO1998040431A1 (en) 1997-03-11 1998-09-17 Amoco Corporation Thermally conductive film and method for the preparation thereof
JP3183845B2 (ja) * 1997-03-21 2001-07-09 財団法人ファインセラミックスセンター カーボンナノチューブ及びカーボンナノチューブ膜の製造方法
US6129901A (en) * 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes
US5998515A (en) * 1997-12-29 1999-12-07 General Electric Company Liquid injection molding silicone elastomers having primerless adhesion
US6040366A (en) * 1998-02-27 2000-03-21 General Electric Company Liquid injection molding silicone elastomers having primerless adhesion
US6156256A (en) * 1998-05-13 2000-12-05 Applied Sciences, Inc. Plasma catalysis of carbon nanofibers
US5912805A (en) 1998-11-04 1999-06-15 Freuler; Raymond G. Thermal interface with adhesive
AUPP976499A0 (en) * 1999-04-16 1999-05-06 Commonwealth Scientific And Industrial Research Organisation Multilayer carbon nanotube films
EP1059266A3 (de) * 1999-06-11 2000-12-20 Iljin Nanotech Co., Ltd. Massensyntheseverfahren von hochreinen, auf einem grossformatigem Substrat angeordnete Kohlenstoffnanoröhren mittels thermischer chemischer Dampfphasenabscheidung
US20040009353A1 (en) * 1999-06-14 2004-01-15 Knowles Timothy R. PCM/aligned fiber composite thermal interface
US20070241303A1 (en) * 1999-08-31 2007-10-18 General Electric Company Thermally conductive composition and method for preparing the same
EP1149932A3 (de) * 2000-01-26 2003-09-10 Iljin Nanotech Co., Ltd. Thermische CVD Vorrichtung und Methode zur Herstellung von Kohlenstoff-Nanoröhren mittels dieser Vorrichtung
US6908572B1 (en) * 2000-07-17 2005-06-21 University Of Kentucky Research Foundation Mixing and dispersion of nanotubes by gas or vapor expansion
JP2002121404A (ja) * 2000-10-19 2002-04-23 Polymatech Co Ltd 熱伝導性高分子シート
JP4697829B2 (ja) * 2001-03-15 2011-06-08 ポリマテック株式会社 カーボンナノチューブ複合成形体及びその製造方法
US20020172767A1 (en) * 2001-04-05 2002-11-21 Leonid Grigorian Chemical vapor deposition growth of single-wall carbon nanotubes
EP1399928B1 (de) * 2001-04-06 2012-06-13 World Properties, Inc. Elelktrisch leitfähige silikondichtungen und verfahren zu ihrer herstellung
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6835591B2 (en) * 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
CN1182025C (zh) * 2001-09-26 2004-12-29 复旦大学 一种矩阵排列的碳纳米管的制备方法
KR20030028296A (ko) * 2001-09-28 2003-04-08 학교법인 한양학원 플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법
US6921462B2 (en) * 2001-12-17 2005-07-26 Intel Corporation Method and apparatus for producing aligned carbon nanotube thermal interface structure
SE0104452D0 (sv) * 2001-12-28 2001-12-28 Forskarpatent I Vaest Ab Metod för framställning av nanostrukturer in-situ, och in-situ framställda nanostrukturer
EP1370489B1 (de) * 2002-03-14 2014-03-12 Samsung Electronics Co., Ltd. Aus polycarbonat und einwandigen kohlenstoffnanoröhren bestehende verbundwerkstoffe
US7335395B2 (en) * 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
WO2003103854A1 (en) * 2002-06-07 2003-12-18 The Board Of Regents For Oklahoma State University Preparation of the layer-by-layer assembled materials from dispersions of highly anisotropic colloids
US6695513B1 (en) * 2002-08-29 2004-02-24 Linda M. Malek Hair product application package and method of use
CN1248959C (zh) * 2002-09-17 2006-04-05 清华大学 一种碳纳米管阵列生长方法
CN1296994C (zh) * 2002-11-14 2007-01-24 清华大学 一种热界面材料及其制造方法
TWI250203B (en) * 2002-12-31 2006-03-01 Hon Hai Prec Ind Co Ltd Thermal interface material
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7273095B2 (en) * 2003-03-11 2007-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanoengineered thermal materials based on carbon nanotube array composites
CN1813023A (zh) * 2003-05-22 2006-08-02 塞威公司 纳米复合材料和生产方法
JP2005001942A (ja) * 2003-06-12 2005-01-06 Mitsubishi Gas Chem Co Inc 配向性カーボンナノチューブ膜の精製方法
US7112472B2 (en) * 2003-06-25 2006-09-26 Intel Corporation Methods of fabricating a composite carbon nanotube thermal interface device
US7118941B2 (en) * 2003-06-25 2006-10-10 Intel Corporation Method of fabricating a composite carbon nanotube thermal interface device
US7168484B2 (en) * 2003-06-30 2007-01-30 Intel Corporation Thermal interface apparatus, systems, and methods
US20050038188A1 (en) * 2003-08-14 2005-02-17 Dongchan Ahn Silicones having improved chemical resistance and curable silicone compositions having improved migration resistance
US7109581B2 (en) * 2003-08-25 2006-09-19 Nanoconduction, Inc. System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US20050061496A1 (en) * 2003-09-24 2005-03-24 Matabayas James Christopher Thermal interface material with aligned carbon nanotubes
US7378715B2 (en) * 2003-10-10 2008-05-27 General Electric Company Free-standing electrostatically-doped carbon nanotube device
US7374793B2 (en) * 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
TWI253467B (en) * 2003-12-23 2006-04-21 Hon Hai Prec Ind Co Ltd Thermal interface material and method for making same
CN100383213C (zh) * 2004-04-02 2008-04-23 清华大学 一种热界面材料及其制造方法
CN100345472C (zh) * 2004-04-10 2007-10-24 清华大学 一种热界面材料及其制造方法
CN1290764C (zh) * 2004-05-13 2006-12-20 清华大学 一种大量制造均一长度碳纳米管的方法
US20050255304A1 (en) * 2004-05-14 2005-11-17 Damon Brink Aligned nanostructure thermal interface material
US7169250B2 (en) * 2004-07-27 2007-01-30 Motorola, Inc. Nanofibrous articles
US7351360B2 (en) 2004-11-12 2008-04-01 International Business Machines Corporation Self orienting micro plates of thermally conducting material as component in thermal paste or adhesive
JP2006147801A (ja) 2004-11-18 2006-06-08 Seiko Precision Inc 放熱シート、インターフェース、電子部品及び放熱シートの製造方法
WO2006065937A2 (en) * 2004-12-16 2006-06-22 Nantero, Inc. Aqueous carbon nanotube applicator liquids and methods for producing applicator liquids thereof
CN100337981C (zh) * 2005-03-24 2007-09-19 清华大学 热界面材料及其制造方法
CN1837147B (zh) * 2005-03-24 2010-05-05 清华大学 热界面材料及其制备方法
CN1841713A (zh) * 2005-03-31 2006-10-04 清华大学 热界面材料及其制作方法
CN100404242C (zh) * 2005-04-14 2008-07-23 清华大学 热界面材料及其制造方法
CN100358132C (zh) * 2005-04-14 2007-12-26 清华大学 热界面材料制备方法
US20070116957A1 (en) * 2005-05-11 2007-05-24 Molecular Nanosystems, Inc. Carbon nanotube thermal pads
US20060258054A1 (en) * 2005-05-11 2006-11-16 Molecular Nanosystems, Inc. Method for producing free-standing carbon nanotube thermal pads
US20060255450A1 (en) * 2005-05-11 2006-11-16 Molecular Nanosystems, Inc. Devices incorporating carbon nanotube thermal pads
US20070116626A1 (en) * 2005-05-11 2007-05-24 Molecular Nanosystems, Inc. Methods for forming carbon nanotube thermal pads
CN100454526C (zh) * 2005-06-30 2009-01-21 鸿富锦精密工业（深圳）有限公司 热界面材料制造方法
CN101054467B (zh) * 2006-04-14 2010-05-26 清华大学 碳纳米管复合材料及其制备方法
US7476339B2 (en) * 2006-08-18 2009-01-13 Saint-Gobain Ceramics & Plastics, Inc. Highly filled thermoplastic composites

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CN101636436A (zh) 2010-01-27
US20120034422A1 (en) 2012-02-09
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WO2008103221A1 (en) 2008-08-28
US8064203B2 (en) 2011-11-22
JP5355423B2 (ja) 2013-11-27
KR20090115794A (ko) 2009-11-06
EP2115046B1 (de) 2010-07-21
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US20120034418A1 (en) 2012-02-09
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