DE69216424D1 - Verfahren zur herstellung eines polyimidfilms mit vorgewähltem thermischen expansionswert - Google Patents

Verfahren zur herstellung eines polyimidfilms mit vorgewähltem thermischen expansionswert

Info

Publication number
DE69216424D1
DE69216424D1 DE69216424T DE69216424T DE69216424D1 DE 69216424 D1 DE69216424 D1 DE 69216424D1 DE 69216424 T DE69216424 T DE 69216424T DE 69216424 T DE69216424 T DE 69216424T DE 69216424 D1 DE69216424 D1 DE 69216424D1
Authority
DE
Germany
Prior art keywords
producing
thermal expansion
polyimide film
expansion value
selected thermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69216424T
Other languages
English (en)
Other versions
DE69216424T2 (de
Inventor
Michael Pottiger
Brian Auman
John Coburn
Timothy Brizan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE69216424D1 publication Critical patent/DE69216424D1/de
Publication of DE69216424T2 publication Critical patent/DE69216424T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/14—Organic dielectrics
    • H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Moulding By Coating Moulds (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
DE69216424T 1991-10-29 1992-10-29 Verfahren zur herstellung eines polyimidfilms mit vorgewähltem thermischen expansionswert Expired - Lifetime DE69216424T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/784,497 US5166292A (en) 1991-10-29 1991-10-29 Process for preparing a polyimide film with a preselected value for CTE
PCT/US1992/009217 WO1993009167A1 (en) 1991-10-29 1992-10-29 Process for preparing a polyimide film with a preselected value for cte

Publications (2)

Publication Number Publication Date
DE69216424D1 true DE69216424D1 (de) 1997-02-13
DE69216424T2 DE69216424T2 (de) 1997-07-17

Family

ID=25132628

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216424T Expired - Lifetime DE69216424T2 (de) 1991-10-29 1992-10-29 Verfahren zur herstellung eines polyimidfilms mit vorgewähltem thermischen expansionswert

Country Status (6)

Country Link
US (1) US5166292A (de)
EP (1) EP0610425B1 (de)
JP (1) JP2638304B2 (de)
KR (1) KR940702901A (de)
DE (1) DE69216424T2 (de)
WO (1) WO1993009167A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0474054B1 (de) * 1990-08-27 1995-12-06 E.I. Du Pont De Nemours And Company Flexible Polyimid-Mehrschichtlaminate und ihre Herstellung
US5393864A (en) * 1993-04-26 1995-02-28 E. I. Du Pont De Nemours And Company Wet-etchable random polyimide copolymer for multichip module applications
US5716677A (en) * 1996-03-21 1998-02-10 Ohio Aerospace Institute Protective coatings for polyimide composites
US5753306A (en) * 1996-09-11 1998-05-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of forming a composite coating with particle materials that are readily dispersed in a sprayable polyimide solution
US5889139A (en) * 1997-02-28 1999-03-30 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Dimensionally stable ether-containing polyimide copolymers
US7285321B2 (en) * 2003-11-12 2007-10-23 E.I. Du Pont De Nemours And Company Multilayer substrates having at least two dissimilar polyimide layers, useful for electronics-type applications, and compositions relating thereto
KR20060045208A (ko) * 2004-11-12 2006-05-17 삼성테크윈 주식회사 반도체 팩키지용 회로기판 및 이의 제조방법
CN100344699C (zh) * 2005-09-27 2007-10-24 黄堂杰 聚酰胺酸组合物及聚酰亚胺/铜箔积层材料
KR101227317B1 (ko) * 2007-07-31 2013-01-28 코오롱인더스트리 주식회사 열안정성이 개선된 폴리이미드 필름
WO2009142248A1 (ja) * 2008-05-20 2009-11-26 宇部興産株式会社 芳香族ポリイミドフィルム、積層体および太陽電池
JP5572164B2 (ja) * 2008-09-26 2014-08-13 ピクシウム ヴィジョン ソシエテ アノニム 電極アレイおよびその製造方法
JP5621768B2 (ja) * 2009-04-14 2014-11-12 宇部興産株式会社 メタライジング用のポリイミドフィルム、これらの製造方法、及び金属積層ポリイミドフィルム
US20110220179A1 (en) * 2009-09-17 2011-09-15 E. I. Du Pont De Nemours And Company Assemblies comprising a thermally and dimensionally stable polyimide film, an electrode and an absorber layer, and methods relating thereto
TWI409016B (zh) * 2011-03-09 2013-09-11 Lextar Electronics Corp 載板結構及其製造方法
KR101646283B1 (ko) * 2011-12-27 2016-08-08 코오롱인더스트리 주식회사 폴리아믹산 용액
KR20140083233A (ko) * 2012-12-26 2014-07-04 코오롱인더스트리 주식회사 폴리아믹산 용액, 이미드화막 및 표시소자
JP6152688B2 (ja) * 2013-04-22 2017-06-28 宇部興産株式会社 ポリアミック酸溶液組成物、及びそれを用いたポリイミド膜の製造方法
TWI561558B (en) * 2015-12-09 2016-12-11 Taiflex Scient Co Ltd Polyimide polymer, polyimide film, and flexible copper-coated laminate
KR20170115339A (ko) * 2016-04-07 2017-10-17 주식회사 엘지화학 내열성이 개선된 폴리이미드 필름 및 그 제조방법
CN107474251A (zh) * 2017-08-18 2017-12-15 南京工业大学 一种膜电容器复合介电薄膜的制备方法
CN110272549B (zh) * 2018-03-16 2020-09-15 北京化工大学 制备聚酰亚胺膜的方法
TW201943798A (zh) 2018-04-06 2019-11-16 美商杜邦股份有限公司 供使用於電子裝置之聚合物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0133533B1 (de) * 1983-08-01 1993-04-21 Hitachi, Ltd. Harzmaterial mit geringer thermischer Ausdehnung für Verdrahtungsisolationsfolie
US4937133A (en) * 1988-03-28 1990-06-26 Nippon Steel Chemical Co., Ltd. Flexible base materials for printed circuits
JPH0760935B2 (ja) * 1988-03-28 1995-06-28 新日鐵化学株式会社 フレキシブルプリント基板の製造法

Also Published As

Publication number Publication date
KR940702901A (ko) 1994-09-17
DE69216424T2 (de) 1997-07-17
EP0610425A1 (de) 1994-08-17
JP2638304B2 (ja) 1997-08-06
JPH07500139A (ja) 1995-01-05
EP0610425B1 (de) 1997-01-02
US5166292A (en) 1992-11-24
WO1993009167A1 (en) 1993-05-13

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