KR940020595A - 미세-선 반도체 장치 제조방법 - Google Patents

미세-선 반도체 장치 제조방법 Download PDF

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Publication number
KR940020595A
KR940020595A KR1019930030207A KR930030207A KR940020595A KR 940020595 A KR940020595 A KR 940020595A KR 1019930030207 A KR1019930030207 A KR 1019930030207A KR 930030207 A KR930030207 A KR 930030207A KR 940020595 A KR940020595 A KR 940020595A
Authority
KR
South Korea
Prior art keywords
line
layer
substrate
formation layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019930030207A
Other languages
English (en)
Korean (ko)
Inventor
리네이 애버네시 케미
로버트 로시안 제임스
죤 피아톤 스티븐
판렌
Original Assignee
글렌 이. 북스
아메리칸 텔리폰 앤드 텔레그라프 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 글렌 이. 북스, 아메리칸 텔리폰 앤드 텔레그라프 캄파니 filed Critical 글렌 이. 북스
Publication of KR940020595A publication Critical patent/KR940020595A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D64/0125—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10P14/3416—
    • H10P14/6336—
    • H10P76/202—
    • H10P76/204—
    • H10P76/4085—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019930030207A 1993-02-26 1993-12-28 미세-선 반도체 장치 제조방법 Withdrawn KR940020595A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2354793A 1993-02-26 1993-02-26
US023,547 1993-02-26

Publications (1)

Publication Number Publication Date
KR940020595A true KR940020595A (ko) 1994-09-16

Family

ID=21815769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930030207A Withdrawn KR940020595A (ko) 1993-02-26 1993-12-28 미세-선 반도체 장치 제조방법

Country Status (4)

Country Link
EP (1) EP0613174A3 (enExample)
JP (1) JPH07135326A (enExample)
KR (1) KR940020595A (enExample)
TW (1) TW244393B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105023835B (zh) * 2015-06-17 2019-04-02 泰科天润半导体科技（北京）有限公司 介质掩膜的制造方法、利用该掩膜刻蚀或离子注入的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551905A (en) * 1982-12-09 1985-11-12 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
DE3609274A1 (de) * 1986-03-19 1987-09-24 Siemens Ag Verfahren zur herstellung eines selbstjustiert positionierten metallkontaktes
US4769343A (en) * 1987-07-17 1988-09-06 Allied-Signal Inc. Single step lift-off technique for submicron gates
FR2650120B1 (fr) * 1989-07-21 1991-09-20 Thomson Composants Microondes Procede de fabrication de grilles hyperfines

Also Published As

Publication number Publication date
EP0613174A2 (en) 1994-08-31
TW244393B (enExample) 1995-04-01
EP0613174A3 (en) 1995-03-01
JPH07135326A (ja) 1995-05-23

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Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000