TW244393B - - Google Patents
Info
- Publication number
- TW244393B TW244393B TW082103376A TW82103376A TW244393B TW 244393 B TW244393 B TW 244393B TW 082103376 A TW082103376 A TW 082103376A TW 82103376 A TW82103376 A TW 82103376A TW 244393 B TW244393 B TW 244393B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/061—Manufacture or treatment of FETs having Schottky gates
- H10D30/0612—Manufacture or treatment of FETs having Schottky gates of lateral single-gate Schottky FETs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
-
- H10D64/0125—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
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- H10P14/3416—
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- H10P14/6336—
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- H10P76/202—
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- H10P76/204—
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- H10P76/4085—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2354793A | 1993-02-26 | 1993-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW244393B true TW244393B (enExample) | 1995-04-01 |
Family
ID=21815769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082103376A TW244393B (enExample) | 1993-02-26 | 1993-04-30 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0613174A3 (enExample) |
| JP (1) | JPH07135326A (enExample) |
| KR (1) | KR940020595A (enExample) |
| TW (1) | TW244393B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023835B (zh) * | 2015-06-17 | 2019-04-02 | 泰科天润半导体科技（北京）有限公司 | 介质掩膜的制造方法、利用该掩膜刻蚀或离子注入的方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4551905A (en) * | 1982-12-09 | 1985-11-12 | Cornell Research Foundation, Inc. | Fabrication of metal lines for semiconductor devices |
| DE3609274A1 (de) * | 1986-03-19 | 1987-09-24 | Siemens Ag | Verfahren zur herstellung eines selbstjustiert positionierten metallkontaktes |
| US4769343A (en) * | 1987-07-17 | 1988-09-06 | Allied-Signal Inc. | Single step lift-off technique for submicron gates |
| FR2650120B1 (fr) * | 1989-07-21 | 1991-09-20 | Thomson Composants Microondes | Procede de fabrication de grilles hyperfines |
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1993
- 1993-04-30 TW TW082103376A patent/TW244393B/zh active
- 1993-12-28 KR KR1019930030207A patent/KR940020595A/ko not_active Withdrawn
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1994
- 1994-02-14 JP JP6037497A patent/JPH07135326A/ja active Pending
- 1994-02-16 EP EP94301125A patent/EP0613174A3/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR940020595A (ko) | 1994-09-16 |
| EP0613174A2 (en) | 1994-08-31 |
| EP0613174A3 (en) | 1995-03-01 |
| JPH07135326A (ja) | 1995-05-23 |