KR940010223A - 플라즈마 에칭시스템 및 플라스마 에칭방법 - Google Patents

플라즈마 에칭시스템 및 플라스마 에칭방법 Download PDF

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KR940010223A
KR940010223A KR1019930021693A KR930021693A KR940010223A KR 940010223 A KR940010223 A KR 940010223A KR 1019930021693 A KR1019930021693 A KR 1019930021693A KR 930021693 A KR930021693 A KR 930021693A KR 940010223 A KR940010223 A KR 940010223A
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pores
electrode
plasma etching
plasma
shower electrode
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KR1019930021693A
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KR100276093B1 (ko
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가즈시 도미다
요시가즈 이또
모또히로 히라노
아끼라 노자와
히로미쓰 마쓰오
순이찌 이이무로
시게기 도자와
유다까 미우라
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이노우에 아끼라
도꾜일렉트론 가부시끼가이샤
이노우에 쥰이찌
도꾜일렉트론 야마나시 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 장시간 사용해도 샤워전극(3)의 가스분출구멍에 폴리머가 부착하지 않는 플라스마 에칭시스템 및 플라스마 에칭방법을 제공하기 위한 것으로, 플라스마를 가두는 용기와, 이 용기내를 배기하는 수단과, 기판을 지지하는 척 전극(61)과, 이 척전극(61)에 대향하는 다수의 세공(55)을 갖는 샤워전극(3)과, 이 샤워전극(3) 및 상기 척전극(61) 사이에 플라스마전압을 인가하는 전원과, 상기 샤워전극(3)의 세공(55)에 연통하고 세공(55)을 통해서 상기 용기내에 플라스마생성용가스를 공급하는 수단과, 상기 세공(55)을 통과하는 상기 가스가 질량유량으로 620㎏/㎡/시간 이상이 되도록 상기 가스공급수단을 억제하는 수단을 갖는다.

Description

플라즈마 에칭시스템 및 플라스마 에칭방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 관련되는 플라즈마 에칭시스템의 전체개요를 도시하는 단면 블록도.

Claims (10)

  1. 플라스마를 가두는 용기와, 이 용기내를 배기하는 수단과, 기판을 지지하는 척 전극(61)과, 이 척전극(61)에 대향하는 다수의 세공(55)을 갖는 샤워전극(3)과, 이 샤워전극(3)및 상기 척전극(51) 사이에 플라스마전압을 인가하는 전원과, 상기 샤워전극(3)의 세공(55)에 연통하고 세공(55)을 통해서 상기 용기 내에 플라스마생성용가스를 공급하는 수단과, 상기 세공(55)을 통과하는 상기 가스가 질량유량으로 620㎏/㎡/시간 이상이 되도록 상기 가스공급수단을 억제하는 수단을 갖는 것을 특징으로 하는 플라스마 에칭시스템.
  2. 제1항에 있어서, 세공(55)에서 가스가 분출하는 영역이 샤워전극(3)의 중심에서 180mm이상의 범위에 미치는 것을 특징으로 하는 플라스마 에칭시스템.
  3. 제1항에 있어서, 세공(55)에서 가스가 분출하는 영역이 샤위전극(3)의 중심에서 180mm까지의 범위내에서 120㎜이상의 범위에 미치는 것을 특징으로 하는 플라스마 에칭시스템.
  4. 제1항에 있어서, 6㎜이상의 피치간격(P)으로 세공(55)이 형성된 샤워전극(3)을 갖는 것을 특징으로 하는 플라스마 에칭시스템.
  5. 제1항에 있어서, 0.8㎜미만의 가스분출구경을 갖는 세공(55)이 형성된 샤워전극(3)을 갖는 것을 특징으로 하는 플라스마 에칭 시스템.
  6. 제1항에 있어서, 세공(55)의 열림구 총면적이 100내지 120㎟의 범위에 있는 것을 특징으로 하는 플라스마 에칭시스템.
  7. 제1항에 있어서, 냉매로 냉각되는 냉각부재가 샤워전극(3)에 설치되어 있는 것을 특징으로 하는 플라스마 에칭시스템.
  8. 제1항에 있어서, 샤워전극은 원반형상이고, 세공(55)이 등간격피치(P)의 격자형배열이 되도록 샤워전극(3)에 형성되어 있는 것을 특징으르 하는 플라스마 에칭시스템.
  9. 샤워전극(3)은 원반형상이고, 세공(55)이 등간격피치(P)의 동심원배열이 되도록 샤워전극(3)에 형성되어 있는 것을 특징으로 하는 플라스마 에칭시스템.
  10. 기판은 용기 내의 척전극(61)에서 지지하고, 용기 내가 감압상태가 되도록 용기 내를 배기하고, 샤워전극(3)의 세공(55)을 통과할 때에 질량유량으로 620㎏/㎡/시간 이상이 되도록 플라스마 생성용 가스를 용기 내에 도입하고. 샤워전극(3) 및 척전극(61)의 사이에 전압을 인가하고, 양전극간에 플라스마를 생성하고, 생성플라스마를 기판에 작용시키는 것을 특징으로 하는 플라스마 에칭방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930021693A 1992-10-19 1993-10-19 플라스마 에칭방법 KR100276093B1 (ko)

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JP92-306121 1992-10-19
JP30612192 1992-10-19

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KR100276093B1 KR100276093B1 (ko) 2000-12-15

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