KR940007443B1 - 디바이스 회로 제조 공정 - Google Patents
디바이스 회로 제조 공정 Download PDFInfo
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- KR940007443B1 KR940007443B1 KR1019900004877A KR900004877A KR940007443B1 KR 940007443 B1 KR940007443 B1 KR 940007443B1 KR 1019900004877 A KR1019900004877 A KR 1019900004877A KR 900004877 A KR900004877 A KR 900004877A KR 940007443 B1 KR940007443 B1 KR 940007443B1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/111—Narrow masking
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33562689A | 1989-04-10 | 1989-04-10 | |
US335,626 | 1989-04-10 | ||
US07/444,579 US5106764A (en) | 1989-04-10 | 1989-11-30 | Device fabrication |
US444,579 | 1989-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900017111A KR900017111A (ko) | 1990-11-15 |
KR940007443B1 true KR940007443B1 (ko) | 1994-08-18 |
Family
ID=26989806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900004877A KR940007443B1 (ko) | 1989-04-10 | 1990-04-10 | 디바이스 회로 제조 공정 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5106764A (de) |
EP (1) | EP0400791B9 (de) |
JP (1) | JPH0722142B2 (de) |
KR (1) | KR940007443B1 (de) |
CA (1) | CA2014285C (de) |
DE (1) | DE69033879T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0909986A1 (de) * | 1990-09-26 | 1999-04-21 | Canon Kabushiki Kaisha | Photolithographisches Verarbeitungsverfahren und Vorrichtung |
US5288657A (en) * | 1990-11-01 | 1994-02-22 | At&T Bell Laboratories | Device fabrication |
JPH0555545A (ja) * | 1991-08-27 | 1993-03-05 | Matsushita Electric Ind Co Ltd | 量子素子の製造方法 |
JP2757642B2 (ja) * | 1991-12-20 | 1998-05-25 | 日本電気株式会社 | ドライエッチング方法 |
US5275687A (en) * | 1992-11-20 | 1994-01-04 | At&T Bell Laboratories | Process for removing surface contaminants from III-V semiconductors |
US5346581A (en) * | 1993-04-01 | 1994-09-13 | At&T Bell Laboratories | Method of making a compound semiconductor device |
US5403753A (en) * | 1993-07-15 | 1995-04-04 | Texas Instruments Incorporated | Method of forming implant indicators for implant verification |
US5580419A (en) * | 1994-03-23 | 1996-12-03 | Trw Inc. | Process of making semiconductor device using focused ion beam for resistless in situ etching, deposition, and nucleation |
US5427648A (en) * | 1994-08-15 | 1995-06-27 | The United States Of America As Represented By The Secretary Of The Army | Method of forming porous silicon |
JP4014676B2 (ja) * | 1996-08-13 | 2007-11-28 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
SE511314C2 (sv) * | 1997-02-07 | 1999-09-06 | Ericsson Telefon Ab L M | Framställning av heterobipolär transistor och laserdiod på samma substrat |
US20060051508A1 (en) * | 2000-12-28 | 2006-03-09 | Ilan Gavish | Focused ion beam deposition |
US6638580B2 (en) * | 2000-12-29 | 2003-10-28 | Intel Corporation | Apparatus and a method for forming an alloy layer over a substrate using an ion beam |
US6492261B2 (en) * | 2000-12-30 | 2002-12-10 | Intel Corporation | Focused ion beam metal deposition |
US6528427B2 (en) | 2001-03-30 | 2003-03-04 | Lam Research Corporation | Methods for reducing contamination of semiconductor substrates |
DE10163346A1 (de) * | 2001-12-21 | 2003-07-10 | Infineon Technologies Ag | Resistloses Lithographieverfahren zur Herstellung feiner Strukturen |
EP2144117A1 (de) | 2008-07-11 | 2010-01-13 | The Provost, Fellows and Scholars of the College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin | Verfahren und System zur Herstellung von Strukturen auf einer Oberfläche |
US8547526B2 (en) * | 2009-04-07 | 2013-10-01 | Micron Technology, Inc. | Photolithography systems and associated methods of selective die exposure |
WO2012014717A1 (ja) * | 2010-07-26 | 2012-02-02 | 浜松ホトニクス株式会社 | 半導体デバイスの製造方法 |
EP2880764B1 (de) | 2012-08-06 | 2019-10-23 | Skorpios Technologies, Inc. | Verfahren und system zur monolithischen integration von schaltungen zur überwachung und steuerung von rf-signalen |
US9337933B2 (en) * | 2012-10-19 | 2016-05-10 | Skorpios Technologies, Inc. | Integrated optical network unit |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5375854A (en) * | 1976-12-17 | 1978-07-05 | Nippon Telegr & Teleph Corp <Ntt> | Production fo semiconductor device |
JPS5567138A (en) * | 1978-11-16 | 1980-05-21 | Jeol Ltd | Method of exposure to electron beam |
US4377437A (en) * | 1981-05-22 | 1983-03-22 | Bell Telephone Laboratories, Incorporated | Device lithography by selective ion implantation |
US4405710A (en) * | 1981-06-22 | 1983-09-20 | Cornell Research Foundation, Inc. | Ion beam exposure of (g-Gex -Se1-x) inorganic resists |
JPS60128622A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | エツチング法 |
JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
JPS62284939A (ja) * | 1986-05-31 | 1987-12-10 | Suzuki Motor Co Ltd | 内燃機関の始動制御装置 |
JPS63116443A (ja) * | 1986-11-05 | 1988-05-20 | Seiko Instr & Electronics Ltd | Fibテスタ |
US4853341A (en) * | 1987-03-25 | 1989-08-01 | Mitsubishi Denki Kabushiki Kaisha | Process for forming electrodes for semiconductor devices using focused ion beams |
JP2531690B2 (ja) * | 1987-08-03 | 1996-09-04 | 株式会社日立製作所 | 配線薄膜パタ―ンの形成方法及びその装置 |
US4897361A (en) * | 1987-12-14 | 1990-01-30 | American Telephone & Telegraph Company, At&T Bell Laboratories | Patterning method in the manufacture of miniaturized devices |
GB8806800D0 (en) * | 1988-03-22 | 1988-04-20 | British Telecomm | Etching methods |
-
1989
- 1989-11-30 US US07/444,579 patent/US5106764A/en not_active Expired - Lifetime
-
1990
- 1990-04-09 DE DE69033879T patent/DE69033879T2/de not_active Expired - Fee Related
- 1990-04-09 EP EP90303768A patent/EP0400791B9/de not_active Expired - Lifetime
- 1990-04-10 KR KR1019900004877A patent/KR940007443B1/ko not_active IP Right Cessation
- 1990-04-10 CA CA002014285A patent/CA2014285C/en not_active Expired - Fee Related
- 1990-04-10 JP JP2094923A patent/JPH0722142B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69033879T2 (de) | 2002-08-22 |
CA2014285A1 (en) | 1990-10-10 |
JPH02295115A (ja) | 1990-12-06 |
EP0400791B9 (de) | 2002-11-27 |
EP0400791B1 (de) | 2001-12-19 |
DE69033879D1 (de) | 2002-01-31 |
JPH0722142B2 (ja) | 1995-03-08 |
US5106764A (en) | 1992-04-21 |
EP0400791A2 (de) | 1990-12-05 |
KR900017111A (ko) | 1990-11-15 |
CA2014285C (en) | 1994-06-07 |
EP0400791A3 (de) | 1991-01-02 |
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