KR940004741A - 진공 부식 챔버 및 진공 부식 챔버의 교체가능한 부분을 처리하기 위한 방법 - Google Patents
진공 부식 챔버 및 진공 부식 챔버의 교체가능한 부분을 처리하기 위한 방법 Download PDFInfo
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- KR940004741A KR940004741A KR1019930016654A KR930016654A KR940004741A KR 940004741 A KR940004741 A KR 940004741A KR 1019930016654 A KR1019930016654 A KR 1019930016654A KR 930016654 A KR930016654 A KR 930016654A KR 940004741 A KR940004741 A KR 940004741A
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- KR
- South Korea
- Prior art keywords
- parts
- chamber
- cover
- door
- vacuum
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 7
- 238000005260 corrosion Methods 0.000 title claims 6
- 230000007797 corrosion Effects 0.000 title claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 5
- 239000010453 quartz Substances 0.000 claims abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000002245 particle Substances 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims abstract 2
- 239000011324 bead Substances 0.000 claims 1
- 238000005422 blasting Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/914—Differential etching apparatus including particular materials of construction
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
알루미늄 덮개, 석영도어 및 시일드를 포함하는 진공챔버에 대한 교체가능한 부분들은 진공챔버내에서 기판을 처리하는 동안에 상기 부분들에 증착되는 재료들의 고착력을 증가시키기 위해서 자체의 표면을 세척하고 거칠게 하도록 처리된다. 이에 의해, 장비의 정지시간이 즐어든다. 교체가능한 부분들은 제1단계에서 화학적으로 세척될 수 있고, 화학약품들을 제거하도륵 헹구어지며, 건조된다. 상기 부분들은 부분들의 표면을 거칠게 하고 표면에 증착되는 재료의 고착력을 개선시키기 위해서 이이드 분사가공되기 쉽다. 계속되는 단계에서 상기 부분들을 모든유리된 입자들을 제거하도륵 초음파 세척된다. 마지막 단계에서 상기 부분들은 포장 또는 사용전에 습기를 제거하도륵 헹구어지고 건조된다. 새로운 단일체의 기계가공된 알루미늄 덮개는 진공챔버의 도어내로 끼워맞추어지는 제1표면으로부터 연장된 벽 및 덮개가 폐쇄되는 경우에 도어와 밀봉 결합하는 제1표면의 중첩부를 갖는다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 진공 처리 챔버에 사용되는 교체가능한 덮개, 도어 및 시일드의 단면도,
제2도는 본 발명의 방법을 나타내는 흐름도.
Claims (6)
- 진공 부식 챔버내에서 교체가능한 부분들을 처리하기 위한 방법으로서, 상기 부분의 표면을 거칠게 하기 위해서 상기 부분의 표면을 비이드 분사가공(bead blasting)하는 단계와, 표면 입자들을 제거하기 위해서 상기 부분을 초음파 세척하는 단계와, 그리고 상기 부분을 헹굼 및 건조시키는 단계를 포함하는 방법.
- 제1항에 있어서, 상기 부분들이 먼저 화학 세척용액을 사용하여 세척되는 방법.
- 제1항에 있어서, 상기 부분들중 하나가 진공챔버에 대한 알루미늄 단일체 덮개인 방법.
- 제1항에 있어서, 하나 또는 그 이상의 부분들이 석영으로 제조되는 방법.
- 진공 부식 챔버로서, 개구부와, 상기 챔버내에서 처리될 기판에 대한 음극지지물과, 상기 음극지지물을 둘러싸는 성영시일드, 상기 챔버의 덮개가 상기 시일드내로 끼워맞추어 폐쇄되는 경우의 석영도어, 및 상기 시일드에 대한 단일체의 알루미늄 덮개를 포함하는 교체가능한 부분들을 포함하고 있으며, 상기 덮개가 상기 도어와 밀봉결합하는 중첩부를 갖추고 있고, 상기 교체가능한 부분들이 제1항의 방법에 따라서 처리되는 진공 부식 챔버.
- 덮개가 폐쇄되는 경우에 챔버의 도어와 밀봉결합하는 제1표면의 중첩부 및 연장벽을 갖춘 진공 부식 챔버에 대한 단일체의 기계가공된 알루미늄 덮개.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/936,433 US5401319A (en) | 1992-08-27 | 1992-08-27 | Lid and door for a vacuum chamber and pretreatment therefor |
US7/936,433 | 1992-08-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940004741A true KR940004741A (ko) | 1994-03-15 |
KR100271190B1 KR100271190B1 (ko) | 2000-12-01 |
Family
ID=25468625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930016654A KR100271190B1 (ko) | 1992-08-27 | 1993-08-26 | 진공 부식 챔버 및 진공 부식 챔버의 교체가능한 부분을 처리하기 위한 방법 |
Country Status (5)
Country | Link |
---|---|
US (3) | US5401319A (ko) |
EP (1) | EP0589237B1 (ko) |
JP (1) | JP2568371B2 (ko) |
KR (1) | KR100271190B1 (ko) |
DE (1) | DE69322043T2 (ko) |
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US5017439A (en) * | 1989-07-19 | 1991-05-21 | Seagate Technology, Inc. | Micro-contamination-free coating for die-cast component in magnetic disk drive |
JPH03180500A (ja) * | 1989-12-07 | 1991-08-06 | Fujitsu Ltd | ステンレス鋼製の真空容器内壁の表面処理方法 |
DE69129081T2 (de) * | 1990-01-29 | 1998-07-02 | Varian Associates | Gerät und Verfahren zur Niederschlagung durch einen Kollimator |
US5202008A (en) * | 1990-03-02 | 1993-04-13 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
DE69111490T2 (de) * | 1990-03-02 | 1996-04-18 | Applied Materials Inc | Verfahren zur Vorbereitung einer Blende zur Verminderung von Teilchen in einer Kammer zur physikalischen Aufdampfung. |
JP3471032B2 (ja) * | 1991-12-27 | 2003-11-25 | アネルバ株式会社 | 薄膜堆積装置 |
JPH05247635A (ja) * | 1992-03-05 | 1993-09-24 | Fujitsu Ltd | スパッタリング装置 |
-
1992
- 1992-08-27 US US07/936,433 patent/US5401319A/en not_active Expired - Fee Related
-
1993
- 1993-07-30 JP JP5190301A patent/JP2568371B2/ja not_active Expired - Fee Related
- 1993-08-26 KR KR1019930016654A patent/KR100271190B1/ko not_active IP Right Cessation
- 1993-08-27 EP EP93113770A patent/EP0589237B1/en not_active Expired - Lifetime
- 1993-08-27 DE DE69322043T patent/DE69322043T2/de not_active Expired - Fee Related
-
1994
- 1994-11-08 US US08/335,611 patent/US5565058A/en not_active Expired - Fee Related
-
1996
- 1996-06-05 US US08/658,784 patent/US5762748A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100439478B1 (ko) * | 2001-12-22 | 2004-07-09 | 동부전자 주식회사 | 금속막 증착설비용 실드 세정방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100271190B1 (ko) | 2000-12-01 |
DE69322043D1 (de) | 1998-12-17 |
DE69322043T2 (de) | 1999-06-24 |
EP0589237A2 (en) | 1994-03-30 |
US5401319A (en) | 1995-03-28 |
US5565058A (en) | 1996-10-15 |
US5762748A (en) | 1998-06-09 |
JPH0817792A (ja) | 1996-01-19 |
EP0589237A3 (en) | 1995-05-24 |
EP0589237B1 (en) | 1998-11-11 |
JP2568371B2 (ja) | 1997-01-08 |
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