DE69322043T2 - Vakuumätzkammer und Verfahren zur Behandlung ihrer Teile - Google Patents

Vakuumätzkammer und Verfahren zur Behandlung ihrer Teile

Info

Publication number
DE69322043T2
DE69322043T2 DE69322043T DE69322043T DE69322043T2 DE 69322043 T2 DE69322043 T2 DE 69322043T2 DE 69322043 T DE69322043 T DE 69322043T DE 69322043 T DE69322043 T DE 69322043T DE 69322043 T2 DE69322043 T2 DE 69322043T2
Authority
DE
Germany
Prior art keywords
treating
parts
etching chamber
vacuum etching
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69322043T
Other languages
English (en)
Other versions
DE69322043D1 (de
Inventor
Thomas Banholzer
Dan Marohl
Avi Tepman
Donald M Mintz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69322043D1 publication Critical patent/DE69322043D1/de
Application granted granted Critical
Publication of DE69322043T2 publication Critical patent/DE69322043T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24CABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/16Vessels; Containers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914Differential etching apparatus including particular materials of construction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
DE69322043T 1992-08-27 1993-08-27 Vakuumätzkammer und Verfahren zur Behandlung ihrer Teile Expired - Fee Related DE69322043T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/936,433 US5401319A (en) 1992-08-27 1992-08-27 Lid and door for a vacuum chamber and pretreatment therefor

Publications (2)

Publication Number Publication Date
DE69322043D1 DE69322043D1 (de) 1998-12-17
DE69322043T2 true DE69322043T2 (de) 1999-06-24

Family

ID=25468625

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69322043T Expired - Fee Related DE69322043T2 (de) 1992-08-27 1993-08-27 Vakuumätzkammer und Verfahren zur Behandlung ihrer Teile

Country Status (5)

Country Link
US (3) US5401319A (de)
EP (1) EP0589237B1 (de)
JP (1) JP2568371B2 (de)
KR (1) KR100271190B1 (de)
DE (1) DE69322043T2 (de)

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US6504233B1 (en) 1999-06-28 2003-01-07 General Electric Company Semiconductor processing component
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
US6168696B1 (en) 1999-09-01 2001-01-02 Micron Technology, Inc. Non-knurled induction coil for ionized metal deposition, sputtering apparatus including same, and method of constructing the apparatus
JP4294176B2 (ja) * 1999-09-13 2009-07-08 株式会社山形信越石英 表面が砂目加工された石英物品の洗浄方法
US20020069970A1 (en) * 2000-03-07 2002-06-13 Applied Materials, Inc. Temperature controlled semiconductor processing chamber liner
EP1320879A4 (de) * 2000-08-11 2009-03-11 Chem Trace Corp System und verfahren zum reinigen von teilen von halbleiterherstellungsgeräteteilen
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6777045B2 (en) * 2001-06-27 2004-08-17 Applied Materials Inc. Chamber components having textured surfaces and method of manufacture
US20030047464A1 (en) * 2001-07-27 2003-03-13 Applied Materials, Inc. Electrochemically roughened aluminum semiconductor processing apparatus surfaces
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US6776873B1 (en) * 2002-02-14 2004-08-17 Jennifer Y Sun Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers
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US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
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US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
US6902628B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US20060105182A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US20050048876A1 (en) * 2003-09-02 2005-03-03 Applied Materials, Inc. Fabricating and cleaning chamber components having textured surfaces
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US7910218B2 (en) * 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7416076B2 (en) * 2004-01-12 2008-08-26 Halliburton Energy Services, Inc. Apparatus and method for packaging and shipping of high explosive content components
US7264679B2 (en) * 2004-02-11 2007-09-04 Applied Materials, Inc. Cleaning of chamber components
US20050211276A1 (en) * 2004-03-15 2005-09-29 Applied Materials, Inc. Lid for a semiconductor device processing apparatus and methods for using the same
US20050238807A1 (en) * 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US7618769B2 (en) * 2004-06-07 2009-11-17 Applied Materials, Inc. Textured chamber surface
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20070113783A1 (en) * 2005-11-19 2007-05-24 Applied Materials, Inc. Band shield for substrate processing chamber
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US7648582B2 (en) * 2005-12-23 2010-01-19 Lam Research Corporation Cleaning of electrostatic chucks using ultrasonic agitation and applied electric fields
US8173228B2 (en) * 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
DE102006026828A1 (de) * 2006-06-07 2007-12-13 Hydro Aluminium Deutschland Gmbh Verfahren zur Herstellung eines Behälters aus Aluminiumblechen
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US8444926B2 (en) * 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
US20080196661A1 (en) * 2007-02-20 2008-08-21 Brian West Plasma sprayed deposition ring isolator
US7741583B2 (en) * 2007-03-22 2010-06-22 Tokyo Electron Limited Bake plate lid cleaner and cleaning method
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US20090194414A1 (en) * 2008-01-31 2009-08-06 Nolander Ira G Modified sputtering target and deposition components, methods of production and uses thereof
JP4669017B2 (ja) * 2008-02-29 2011-04-13 富士フイルム株式会社 成膜装置、ガスバリアフィルムおよびガスバリアフィルムの製造方法
US20090261065A1 (en) * 2008-04-18 2009-10-22 Lam Research Corporation Components for use in a plasma chamber having reduced particle generation and method of making
TWI502617B (zh) * 2010-07-21 2015-10-01 應用材料股份有限公司 用於調整電偏斜的方法、電漿處理裝置與襯管組件
JP5972791B2 (ja) 2010-09-09 2016-08-17 株式会社瑞光 着用物品の製造方法及び製造装置
CN102513305B (zh) * 2011-12-30 2016-03-02 上海集成电路研发中心有限公司 半导体硅片的清洗装置及其清洗方法
CN103510064B (zh) * 2012-06-15 2016-06-29 中微半导体设备(上海)有限公司 真空处理装置及控制制程颗粒沉积路径的方法
US9101954B2 (en) 2013-09-17 2015-08-11 Applied Materials, Inc. Geometries and patterns for surface texturing to increase deposition retention
US11139151B1 (en) * 2018-03-15 2021-10-05 Intel Corporation Micro-surface morphological matching for reactor components
USD913979S1 (en) 2019-08-28 2021-03-23 Applied Materials, Inc. Inner shield for a substrate processing chamber
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USD973609S1 (en) 2020-04-22 2022-12-27 Applied Materials, Inc. Upper shield with showerhead for a process chamber
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Also Published As

Publication number Publication date
KR100271190B1 (ko) 2000-12-01
DE69322043D1 (de) 1998-12-17
EP0589237A2 (de) 1994-03-30
US5401319A (en) 1995-03-28
US5565058A (en) 1996-10-15
US5762748A (en) 1998-06-09
JPH0817792A (ja) 1996-01-19
EP0589237A3 (de) 1995-05-24
KR940004741A (ko) 1994-03-15
EP0589237B1 (de) 1998-11-11
JP2568371B2 (ja) 1997-01-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee