KR930022549A - 유전체 물질에의 전기 접속부 - Google Patents
유전체 물질에의 전기 접속부Info
- Publication number
- KR930022549A KR930022549A KR1019930006545A KR930006545A KR930022549A KR 930022549 A KR930022549 A KR 930022549A KR 1019930006545 A KR1019930006545 A KR 1019930006545A KR 930006545 A KR930006545 A KR 930006545A KR 930022549 A KR930022549 A KR 930022549A
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric material
- doped
- nitride
- dielectric
- compounds
- Prior art date
Links
- 239000003989 dielectric material Substances 0.000 title claims abstract 15
- 150000001875 compounds Chemical class 0.000 claims abstract 15
- -1 ruthenium nitrides Chemical class 0.000 claims abstract 9
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract 6
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract 5
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract 3
- 150000002736 metal compounds Chemical class 0.000 claims abstract 3
- KELHQGOVULCJSG-UHFFFAOYSA-N n,n-dimethyl-1-(5-methylfuran-2-yl)ethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=C(C)O1 KELHQGOVULCJSG-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000003990 capacitor Substances 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims 3
- 239000010936 titanium Substances 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052788 barium Inorganic materials 0.000 claims 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims 2
- 229910052712 strontium Inorganic materials 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 229910000831 Steel Inorganic materials 0.000 claims 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 150000002843 nonmetals Chemical class 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Integrated Circuits (AREA)
- Conductive Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Memories (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
본 발명은 주가되는 구조는 유전체 물질〔예를 들어 스트론튬 티타네이트(22)〕및 유전체〔예를 들어 루테니엄 질화물(20 및 24)〕에 만들어지는 전기접속을 포함한다. 접속은 전기적으로 전도성이 루테니엄 질화물, 루테니엄 이산화물, 주석 질화물, 주석 산화물, 티타늄 질화물 및 티타늄 일산화물과 같은 비금속을 함유하는 화합물(즉 하나 이상의 비금속이 있는 금속 화합물)로 되어 있다. 이와 같은 구조의 장점은 금속 화합물이 확산 배리어로 작용함으로써 외연하는 물질과 유전체 사이의 오염을 감소시키는 것을 포함한다. 반응된 금속에 의해 더 이상의 반응이 최소화되어 접속 물질의 층간 분리를 방지한다. 접속은 단일층이므로 제조 환경에서 더욱 쉽게 경제적으로 제조될 수 있다. 비전도 상호 접속 산화물에 의해 야기되는 부유 저항이 대체로 이들 구조에 의해 방지된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 커패시터의 단면도.
제2도는 반도체 기판의 표면상에 형성된 커패시터의 현미경적의 단면도.
제3도는 반도체 기판의 표면상에 형성된 커패시터의 현미경적인 단면도.
Claims (16)
- 유전체 및 상기 유전체 물질에 접속되는 하나 이상의 전기 접속부를 포함하되, 상기 전기 접속부는 하나이상의 전기적으로 전도성인 비금속 함유화합물로 이루어진 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 유전체가 강 유전체 물질인 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 유전체가 전이 금속 산화물, 티타네이트, 하나 이상의 회토류 원소로 도핑된 티타네이트, 하나 이상의 알칼리 토금속으로 도핑된 티타네이트 및 이들의 화합물로 이루어진 군에서 선택되는 것을 특징으로 하는 구조물.
- 제1항에 있어서,상기 유전체 물질이, Ta2O3, Y2O3, SrTIO3, TIO3, KNbO3, KTaO3, (Pb,Mg) NbO3, Bi4Ti3O12또는 이들의 화합물로 이루어진 군에서 선택되는 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 유전체 물질이 La도핑된(Ba,Sr,Pb)(Ti,Zr)O3또는 Nb 도핑된(Ba, Sr, Pb)(Ti, Zr)O3인 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 전도성 화합물이 루테니엄 질화물, 루테니엄 이산화물, 주석 질화물, 주석 산화물, 티타늄 질화물, 티타늄 일산화물 및 이들의 화합물로 이루어진 RNSDPTJ 선태되는 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 전도성 화합물이 전기 전도성이 상당히 증가하도록 도핑되는 것을 특징으로 하는 구조물.
- 제7항에 있어서, 상기 도핑된 금속 화합물이 인듐 도핑된 주석 질화물, 알루미늄 도핑된 아연 질화물, 인듐 도핑된 주석 산화물, 알루미늄 도핑된 아연 산화물 및 이들의 화합물로 이루어진 군에서 선택되는 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 유전에 물질이 바륨 스트론튬 티타네이트인 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 유전체 물질이 납 지르코늄 티타네이트인 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 유전체 물질이 탄탈륨 오산화물인 것을 특징으로 하는 구조물.
- 제1항에 있어서, 상기 유전체 물질이 니오븀 오산화물인 것을 특징으로 하는 구조물.
- 루테니엄 질화물의 2개 층 사이에 있는 바륨 스트론튬 티타네이트 층을 포함하는 것을 특징으로 하는 커페시터.
- 커페시터를 형성하는 방법에 있어서 (a) 유전체 물질이 전이 금속 산화물, 티타네이트, 하나 이상의 희토류 원소로 도핑된 티타네이트, 하나 이상의 알칼리 토금속으로 도핑된 티타네이트 및 이들의 화합물로 이루어진 군에서 선택되어, 전기적으로 전도성이 비금속 함유 화합물의 제1 층상에 유전체 물질층은 형성하는 단계, (b)상기 유전체 물질층상에 비금속 함유 화합물의 전기적으로 전도성인 제2층을 형성하는 단계를 포함하는 것을 특징으로 하는 방법.
- 제14항에 있어서, 상기 전도성 화합물이 루테니엄 질화물, 루테니엄 이산화물, 주석 질화물, 주석 산화물, 티타늄 질화물, 티타늄 일산화물 및 이들의 화합물로 이루어진 군에서 선태되는 것을 특징으로 하는 방법.
- 제14항에 있어서, 상기 전도성 화합물을 도핑하는 추가적인 단계가 수행되어 상기 전도성 화합물이 전도성을 상당히 향상시키는 것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87186492A | 1992-04-20 | 1992-04-20 | |
US07/871,864 | 1992-04-20 | ||
US7/871,864 | 1992-04-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930022549A true KR930022549A (ko) | 1993-11-24 |
KR100325967B1 KR100325967B1 (ko) | 2002-06-20 |
Family
ID=25358331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930006545A KR100325967B1 (ko) | 1992-04-20 | 1993-04-19 | 유전체 물질에의 전기 접속부 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5520992A (ko) |
EP (2) | EP0567062A1 (ko) |
JP (1) | JP3351856B2 (ko) |
KR (1) | KR100325967B1 (ko) |
TW (1) | TW353186B (ko) |
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-
1993
- 1993-04-19 JP JP12770793A patent/JP3351856B2/ja not_active Expired - Fee Related
- 1993-04-19 KR KR1019930006545A patent/KR100325967B1/ko not_active IP Right Cessation
- 1993-04-20 EP EP93106373A patent/EP0567062A1/en not_active Withdrawn
- 1993-04-20 EP EP97100451A patent/EP0800187A3/en not_active Withdrawn
- 1993-06-22 US US08/081,484 patent/US5520992A/en not_active Expired - Lifetime
-
1995
- 1995-04-20 TW TW084103884A patent/TW353186B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0800187A2 (en) | 1997-10-08 |
KR100325967B1 (ko) | 2002-06-20 |
EP0567062A1 (en) | 1993-10-27 |
JP3351856B2 (ja) | 2002-12-03 |
EP0800187A3 (en) | 2005-09-14 |
US5520992A (en) | 1996-05-28 |
TW353186B (en) | 1999-02-21 |
JPH06151712A (ja) | 1994-05-31 |
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