KR930006725B1 - 반도체장치의 전극구조 및 그 제조방법 - Google Patents

반도체장치의 전극구조 및 그 제조방법 Download PDF

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Publication number
KR930006725B1
KR930006725B1 KR1019910000772A KR910000772A KR930006725B1 KR 930006725 B1 KR930006725 B1 KR 930006725B1 KR 1019910000772 A KR1019910000772 A KR 1019910000772A KR 910000772 A KR910000772 A KR 910000772A KR 930006725 B1 KR930006725 B1 KR 930006725B1
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KR
South Korea
Prior art keywords
film
platinum
kpa
electrode structure
semiconductor device
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KR1019910000772A
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English (en)
Korean (ko)
Inventor
마유미 가누라
쇼이치 이마무라
다츠오 아키야마
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
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Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
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Publication of KR930006725B1 publication Critical patent/KR930006725B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
KR1019910000772A 1990-01-25 1991-01-18 반도체장치의 전극구조 및 그 제조방법 KR930006725B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-15229 1990-01-25
JP1522990A JPH03219674A (ja) 1990-01-25 1990-01-25 半導体装置の電極構造及びその製造方法

Publications (1)

Publication Number Publication Date
KR930006725B1 true KR930006725B1 (ko) 1993-07-23

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ID=11883034

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000772A KR930006725B1 (ko) 1990-01-25 1991-01-18 반도체장치의 전극구조 및 그 제조방법

Country Status (2)

Country Link
JP (1) JPH03219674A (ja)
KR (1) KR930006725B1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945890A (ja) 1995-05-25 1997-02-14 Sharp Corp オーミック電極構造、半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972723A (ja) * 1982-10-19 1984-04-24 Matsushita Electric Ind Co Ltd ３−５族化合物半導体のオ−ミツク電極の形成方法
JPS59112654A (ja) * 1982-12-18 1984-06-29 Toshiba Corp 砒化ガリウム半導体装置
JPS59189669A (ja) * 1983-04-13 1984-10-27 Toshiba Corp 化合物半導体オ−ム性接触電極およびその製造方法
JPS62282480A (ja) * 1986-05-30 1987-12-08 Nec Corp 電極形成方法
JPS631065A (ja) * 1986-06-20 1988-01-06 Matsushita Electronics Corp シヨツトキ−バリアダイオ−ドの製造方法

Also Published As

Publication number Publication date
JPH03219674A (ja) 1991-09-27

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