KR930001392A - 반도체 메모리 장치의 전원 접지선 배선방법 - Google Patents

반도체 메모리 장치의 전원 접지선 배선방법 Download PDF

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Publication number
KR930001392A
KR930001392A KR1019910010194A KR910010194A KR930001392A KR 930001392 A KR930001392 A KR 930001392A KR 1019910010194 A KR1019910010194 A KR 1019910010194A KR 910010194 A KR910010194 A KR 910010194A KR 930001392 A KR930001392 A KR 930001392A
Authority
KR
South Korea
Prior art keywords
memory device
semiconductor memory
power
line
ground line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019910010194A
Other languages
English (en)
Korean (ko)
Inventor
서영호
임형규
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910010194A priority Critical patent/KR930001392A/ko
Priority to TW081104313A priority patent/TW245835B/zh
Priority to ITMI921460A priority patent/IT1258990B/it
Priority to FR9207335A priority patent/FR2678109B1/fr
Priority to DE4219927A priority patent/DE4219927A1/de
Priority to GB9212830A priority patent/GB2256968A/en
Priority to JP4161159A priority patent/JPH0719851B2/ja
Publication of KR930001392A publication Critical patent/KR930001392A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H10W72/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10W20/427—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019910010194A 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법 Abandoned KR930001392A (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법
TW081104313A TW245835B (enExample) 1991-06-19 1992-06-02
ITMI921460A IT1258990B (it) 1991-06-19 1992-06-12 Dispositivo di memoria a semiconduttore con linee di alimentazione e di massa del terminale di ingresso isolate da quelle del terminale di uscita
FR9207335A FR2678109B1 (fr) 1991-06-19 1992-06-17 Disposition des lignes de source de tension et de masse d'un dispositif de memoire a semiconducteur.
DE4219927A DE4219927A1 (de) 1991-06-19 1992-06-17 Anordnung von spannungsquelle- und erdungsleitungen einer halbleiterspeichereinrichtung
GB9212830A GB2256968A (en) 1991-06-19 1992-06-17 Connections in semiconductor memory devices
JP4161159A JPH0719851B2 (ja) 1991-06-19 1992-06-19 半導体メモリ装置における電源線及び接地線の配線方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910010194A KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법

Publications (1)

Publication Number Publication Date
KR930001392A true KR930001392A (ko) 1993-01-16

Family

ID=19316015

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910010194A Abandoned KR930001392A (ko) 1991-06-19 1991-06-19 반도체 메모리 장치의 전원 접지선 배선방법

Country Status (7)

Country Link
JP (1) JPH0719851B2 (enExample)
KR (1) KR930001392A (enExample)
DE (1) DE4219927A1 (enExample)
FR (1) FR2678109B1 (enExample)
GB (1) GB2256968A (enExample)
IT (1) IT1258990B (enExample)
TW (1) TW245835B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249166B1 (ko) * 1997-03-07 2000-03-15 김영환 이에스디(esd) 보호회로 및 그 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
JPS5922357A (ja) * 1982-07-28 1984-02-04 Toshiba Corp Ｃｍｏｓ形半導体集積回路
JPH0693497B2 (ja) * 1986-07-30 1994-11-16 日本電気株式会社 相補型ｍｉｓ集積回路
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
DE3855356T2 (de) * 1987-03-18 1997-01-30 Nippon Electric Co Vorrichtung mit complementäre integrierte Schaltung mit Mitteln zur Verhinderung einer parasitären Auslösung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100249166B1 (ko) * 1997-03-07 2000-03-15 김영환 이에스디(esd) 보호회로 및 그 제조방법

Also Published As

Publication number Publication date
IT1258990B (it) 1996-03-11
DE4219927A1 (de) 1992-12-24
ITMI921460A1 (it) 1993-12-12
GB2256968A (en) 1992-12-23
JPH06112435A (ja) 1994-04-22
FR2678109B1 (fr) 1994-01-21
FR2678109A1 (fr) 1992-12-24
GB9212830D0 (en) 1992-07-29
TW245835B (enExample) 1995-04-21
ITMI921460A0 (it) 1992-06-12
JPH0719851B2 (ja) 1995-03-06

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