KR930000705A - 침지 주석/납 합금도금욕 - Google Patents

침지 주석/납 합금도금욕 Download PDF

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Publication number
KR930000705A
KR930000705A KR1019920010973A KR920010973A KR930000705A KR 930000705 A KR930000705 A KR 930000705A KR 1019920010973 A KR1019920010973 A KR 1019920010973A KR 920010973 A KR920010973 A KR 920010973A KR 930000705 A KR930000705 A KR 930000705A
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KR
South Korea
Prior art keywords
plating bath
sulfonic acid
bath according
thiocyanate
alkyl group
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Application number
KR1019920010973A
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English (en)
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KR100215331B1 (ko
Inventor
다케시 미우라
마사루 세이타
시게루 고다이라
Original Assignee
가와시마 도시오
니뽄리로날 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가와시마 도시오, 니뽄리로날 가부시키가이샤 filed Critical 가와시마 도시오
Publication of KR930000705A publication Critical patent/KR930000705A/ko
Application granted granted Critical
Publication of KR100215331B1 publication Critical patent/KR100215331B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3473—Plating of solder

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)

Abstract

내용 없음

Description

침지 주석/납 합금도금욕
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 티오시안산칼륨이 첨가된 실시예1과 첨가제를 전혀 첨가하지 않은 비교실시예 1에서 도금욕의 전체 금속중 Sn의 비율과 Sn의 침착율사이의 관계를 나타낸 그래프이고,
제2도는 실시예2에서 도금 시간, 침착 두께 및 침착율 사이의 관계를 나타낸 그래프이다.

Claims (11)

  1. 알칸 술폰산, 알칸올 술폰산 및 방향족 술폰산으로부터 선택된 적어도 하나의 유기 술폰산, 상기 유기 술폰산의 2가 주석 및 납염, 킬레이트제로서 티오요소러 구성되고, 첨가제로서 티오시안산과 그의 유도체 중 적어도 하나를 함유하는 염기성 조성을 갖는 주석/납 합금 도금욕.
  2. 제1항에 있어서, 수화히드라진이 주석의 항산화제로서 추가로 첨가되어 있는 도금욕.
  3. 제1항에 있어서, 상기 알칸 술폰산이 다음 일반식을 갖는 도금욕.
    R1SO3H
    윗 식에서, R1은 1∼6개의 탄소 원자수를 갖는 알킬기이다.
  4. 제1항에 있어서, 상기 알칸을 술폰산이 다음 일반식을 갖는 도금욕.
    윗 식에서, R은 1∼3개의 탄소 원자수를 갖는 알킬기이고, R2는 어떤 위치에 놓을 수 있는 1∼3개의 탄소 원자수를 갖는 알킬기이고, n은 0 내지 3의 정수이다.
  5. 제1항에 있어서, 상기 방향족 술폰산이 다음 일반식을 갖는 도금욕.
    윗 식에서, R3은 1∼3개의 탄소 원자수를 갖는 알킬기, C0-3의 알킬기를 갖는 알킬아릴기, 카르복실기 또는 술폰산기이고, m은 0 내지 3의 정수를 나타낸다.
  6. 제1항에 있어서, 상기 유기 술폰산의 사용량 5 내지 300g/ℓ인 도금욕.
  7. 제1항에 있어서, 상기 유기 술폰산의 이가 주석 및 납염의 사용량이 5 내지 200g/ℓ인 도금욕.
  8. 제1항에 있어서, 티오요소의 사용량이 30 내지 200g/ℓ인 도금욕.
  9. 제1항에 있어서, 상기 티오시안산유도체가 티오시안염, 티오시아네이토 착화합물, (이소)티오시안산 에스테르, 티오시안산알킬렌 및 티오시안산 폴리머로 되는 군 중에서 선택된 도금욕.
  10. 제1항에 있어서, 티오시안산 또는 그의 유도체의 사용량이 0.2 내지 20g/ℓ인 도금욕.
  11. 제2항에 있어서, 상기 수화히드라진의 사용량이 0.1 내지 50g/ℓ인 도금욕.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920010973A 1991-06-25 1992-06-24 침지주석/납합금도금욕 KR100215331B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3153480A JP2525521B2 (ja) 1991-06-25 1991-06-25 無電解スズ―鉛合金めっき浴
JP153480/91 1991-06-25

Publications (2)

Publication Number Publication Date
KR930000705A true KR930000705A (ko) 1993-01-15
KR100215331B1 KR100215331B1 (ko) 1999-08-16

Family

ID=15563499

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010973A KR100215331B1 (ko) 1991-06-25 1992-06-24 침지주석/납합금도금욕

Country Status (6)

Country Link
US (1) US5302256A (ko)
EP (1) EP0520421B1 (ko)
JP (1) JP2525521B2 (ko)
KR (1) KR100215331B1 (ko)
DE (1) DE69213840T2 (ko)
TW (1) TW211044B (ko)

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US5759944A (en) * 1993-04-20 1998-06-02 Johnson Matthey Public Limited Company Catalyst material
US5391402A (en) * 1993-12-03 1995-02-21 Motorola Immersion plating of tin-bismuth solder
DE19653765A1 (de) * 1996-12-23 1998-06-25 Km Europa Metal Ag Innen verzinntes Kupferrohr und Verfahren zur Beschichtung eines Kupferrohrs
DE69929967T2 (de) 1998-04-21 2007-05-24 Applied Materials, Inc., Santa Clara Elektroplattierungssystem und verfahren zur elektroplattierung auf substraten
US6913680B1 (en) 2000-05-02 2005-07-05 Applied Materials, Inc. Method of application of electrical biasing to enhance metal deposition
US6808612B2 (en) 2000-05-23 2004-10-26 Applied Materials, Inc. Method and apparatus to overcome anomalies in copper seed layers and to tune for feature size and aspect ratio
JP2004536217A (ja) * 2000-10-03 2004-12-02 アプライド　マテリアルズ　インコーポレイテッド 金属蒸着のためのエントリーにあたって半導体基板を傾けるための方法と関連する装置
US20040020780A1 (en) * 2001-01-18 2004-02-05 Hey H. Peter W. Immersion bias for use in electro-chemical plating system
US6740221B2 (en) 2001-03-15 2004-05-25 Applied Materials Inc. Method of forming copper interconnects
US20040253450A1 (en) * 2001-05-24 2004-12-16 Shipley Company, L.L.C. Formaldehyde-free electroless copper plating process and solution for use in the process
US7239747B2 (en) * 2002-01-24 2007-07-03 Chatterbox Systems, Inc. Method and system for locating position in printed texts and delivering multimedia information
US20030188974A1 (en) * 2002-04-03 2003-10-09 Applied Materials, Inc. Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects
US6911136B2 (en) * 2002-04-29 2005-06-28 Applied Materials, Inc. Method for regulating the electrical power applied to a substrate during an immersion process
US20040118699A1 (en) * 2002-10-02 2004-06-24 Applied Materials, Inc. Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects
WO2004075266A2 (en) * 2003-02-18 2004-09-02 Applied Materials, Inc. Method for immersing a substrate
US20100098863A1 (en) * 2003-03-12 2010-04-22 University Of Missouri Process for spontaneous deposition from an organic solution
US20040206628A1 (en) * 2003-04-18 2004-10-21 Applied Materials, Inc. Electrical bias during wafer exit from electrolyte bath
US20050085062A1 (en) * 2003-10-15 2005-04-21 Semitool, Inc. Processes and tools for forming lead-free alloy solder precursors
EP1630252A1 (de) * 2004-08-27 2006-03-01 ATOTECH Deutschland GmbH Verfahren zur beschichtung von Substraten enthaltend Antimonverbindungen mit Zinn und Zinnlegierungen
US20060175201A1 (en) * 2005-02-07 2006-08-10 Hooman Hafezi Immersion process for electroplating applications
JP5522617B2 (ja) * 2008-11-05 2014-06-18 メック株式会社 接着層形成液及び接着層形成方法
JP5397762B2 (ja) * 2009-08-06 2014-01-22 川口化学工業株式会社 ゴムの耐リバージョン性、耐熱性及び動的低発熱性を向上させる加硫剤
JP5715411B2 (ja) * 2010-12-28 2015-05-07 ローム・アンド・ハース電子材料株式会社 めっき液中から不純物を除去する方法
EP3174088B1 (en) * 2015-11-26 2020-12-30 Siyang Grande Electronics Co., Ltd. Method of manufacturing a plastic packaged smd diode

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Also Published As

Publication number Publication date
JP2525521B2 (ja) 1996-08-21
EP0520421A2 (en) 1992-12-30
JPH051385A (ja) 1993-01-08
KR100215331B1 (ko) 1999-08-16
TW211044B (ko) 1993-08-11
EP0520421B1 (en) 1996-09-18
DE69213840D1 (de) 1996-10-24
US5302256A (en) 1994-04-12
EP0520421A3 (en) 1994-06-29
DE69213840T2 (de) 1997-02-20

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