KR920704348A - 알루미늄 합금 배선층과 그의 제법, 및 알루미늄 합금 스퍼터링 타겟 - Google Patents

알루미늄 합금 배선층과 그의 제법, 및 알루미늄 합금 스퍼터링 타겟

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Publication number
KR920704348A
KR920704348A KR1019920702137A KR920702137A KR920704348A KR 920704348 A KR920704348 A KR 920704348A KR 1019920702137 A KR1019920702137 A KR 1019920702137A KR 920702137 A KR920702137 A KR 920702137A KR 920704348 A KR920704348 A KR 920704348A
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South Korea
Prior art keywords
aluminum alloy
scandium
weight
wiring layer
aluminum
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KR1019920702137A
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English (en)
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KR100228414B1 (ko
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다다오 우에다
가즈나리 다께무라
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미쓰비시 가세이 가부시끼가이샤
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Publication of KR920704348A publication Critical patent/KR920704348A/ko
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Publication of KR100228414B1 publication Critical patent/KR100228414B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.

Description

알루미늄 함금 배선층과 그의 제법, 및 알루미늄 합금 스퍼터링 타겟
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 실시예 및 비교예에서 수득한 박막의 비저항의 측정결과를 나타내는 그래프이고, 종축은 비저항(μΩm), 횡측은 웨이퍼 온도(℃)를 나타낸다, 도면중에서 (1)내지 (4)는 본 발명의 실시예(시료 1내지 4), (11) 내지 (12)는 비교예(시료 11 내지 12)를 나타낸다(이하의 제 2도 및 제 3도에 있어서도 동일),
제 2도는 본 발명의 실시예 및 비교예에서 수득한 박막의 엘렉트로마이그레이숀 시험의 결과를 나타내는 그래프이고, 종축은 단선시간(시간), 횡측은 웨이퍼 온도(℃)를 나타낸다.
제 3도는 본 발명의 실시예 및 비교예에서 수득한 박막의 스트레스마이그레이숀 시험의 각 결과를 나타내는 그래프이고, 종축은 보이드 수(개), 횡축은 웨이퍼 온도(℃)를 나타낸다.

Claims (9)

  1. 0.01내지 1.0중량%의 스칸듐을 함유하고, 잔부가 순도 99.99%이상의 알루미늄으로된 것을 특징으로 하는 알루미늄 합금 배선층.
  2. 0.01 내지 1.0중량%의 스칸듐과 0.01 내지 3.0중량%의 실리콘, 티탄, 동, 붕소, 하프늄 및 희토류 원소(단, 스칸듐 제외)로된 군으로 부터 선택된 적어도 1종의 원소를 함유하고, 잔부가 순도 99.99%이상의 알루미늄으로된 것을 특징으로 하는 알루미늄 합금 배선층.
  3. 스칸듐의 함유량이 0.05내지 0.6중량%인 특허청구 범위 제1항 또는 제2항 기재의 알루미늄 합금 배선층.
  4. 0.01내지 1.0중량%의 스칸듐을 함유하고, 잔부가 순도 99.99% 이상의 알루미늄으로된 합금 티켓을 사용하고 스퍼터링법에 의해 형성되는 것을 특징으로 하는 알루미늄 합금 배선층의 제법.
  5. 0.01 내지 1.0중량%의 스칸듐과 0.01내지 3.0중량%의 실리콘, 티탄, 동, 붕소, 하프늄 및 희토류 원소(단, 스칸듐 제외)로된 군으로 부터 선택된 적어도 1종의 원소를 함유하고, 잔부가 순도 99.99%이상의 알루미늄으로된 알루미늄 합금 타겟을 사용하고 스퍼터링법에 의해 형성하는 것을 특징으로 하는 알류미늄 합금 배선층의 제법.
  6. 알루미늄 합금 타겟의 스칸듐의 함유량이 0.05내지 0.6중량%인 특허청구 범위 제4항 또는 제5항 기재의 알루미늄 합급 배선층의 제법.
  7. 0.01 내지 1.0중량%의 스칸듐을 함유하고, 잔부가 순도 99.99% 이상의 알루미늄으로 된 것을 특징으로 하는 알루미늄 합금 스퍼터링 타겟.
  8. 0.01 내지 1.0중량%의 스칸듐과 0.01 내지 3.0중량%의 실리콘, 티탄, 동, 붕소, 하프늄 및 희토류 원소(단, 스칸듐 제외)로된 군으로 부터 선택된 적어도 1종의 원소를 함유하고, 잔부가 순도 99.99%이상의 알루미늄으로된 것을 특징으로 하는 알루미늄 합금 스퍼터링 타겟.
  9. 스칸듐의 함유량이 0.05 내지 0.6중량%인 특허청구의 범위 제 7항 또는 제 8항 기재의 알루미늄 합금 스퍼터링 타겟.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920702137A 1991-01-17 1992-01-17 알루미늄 합금 배선층과 그의 제법, 및 알루미늄 합금 스퍼터링 타겟 KR100228414B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1710991 1991-01-17
JP91/17109 1991-01-17
PCT/JP1992/000034 WO1992013360A1 (en) 1991-01-17 1992-01-17 Aluminum alloy wiring layer, manufacturing thereof, and aluminum alloy sputtering target

Publications (2)

Publication Number Publication Date
KR920704348A true KR920704348A (ko) 1992-12-19
KR100228414B1 KR100228414B1 (ko) 1999-11-01

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Country Status (6)

Country Link
US (1) US5541007A (ko)
EP (1) EP0521163B1 (ko)
JP (1) JP3096699B2 (ko)
KR (1) KR100228414B1 (ko)
DE (1) DE69219952T2 (ko)
WO (1) WO1992013360A1 (ko)

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Publication number Publication date
EP0521163A1 (en) 1993-01-07
JP3096699B2 (ja) 2000-10-10
EP0521163B1 (en) 1997-05-28
US5541007A (en) 1996-07-30
DE69219952D1 (de) 1997-07-03
WO1992013360A1 (en) 1992-08-06
EP0521163A4 (en) 1993-04-14
KR100228414B1 (ko) 1999-11-01
DE69219952T2 (de) 1997-10-16

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