CN104805406B - 铝钪旋转靶材及其制备方法 - Google Patents
铝钪旋转靶材及其制备方法 Download PDFInfo
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- CN104805406B CN104805406B CN201510185516.2A CN201510185516A CN104805406B CN 104805406 B CN104805406 B CN 104805406B CN 201510185516 A CN201510185516 A CN 201510185516A CN 104805406 B CN104805406 B CN 104805406B
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- powder
- aluminium
- gas
- scandium
- target
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- -1 Aluminium scandium Chemical compound 0.000 title claims abstract description 42
- 239000013077 target material Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 75
- 239000007789 gas Substances 0.000 claims abstract description 54
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000007921 spray Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000005507 spraying Methods 0.000 claims abstract description 27
- 229910052786 argon Inorganic materials 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 19
- 238000004320 controlled atmosphere Methods 0.000 claims abstract description 17
- 239000004411 aluminium Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010935 stainless steel Substances 0.000 claims abstract description 12
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 238000007873 sieving Methods 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 238000000498 ball milling Methods 0.000 claims abstract description 7
- 238000010288 cold spraying Methods 0.000 claims description 22
- 238000005422 blasting Methods 0.000 claims description 15
- 238000000227 grinding Methods 0.000 claims description 10
- 238000010891 electric arc Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000320 mechanical mixture Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 230000008676 import Effects 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 6
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 14
- 239000001301 oxygen Substances 0.000 abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 239000011261 inert gas Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000000284 extract Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000000918 plasma mass spectrometry Methods 0.000 description 5
- 238000004506 ultrasonic cleaning Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005453 pelletization Methods 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229940050561 matrix product Drugs 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- Coating By Spraying Or Casting (AREA)
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CN104805406A CN104805406A (zh) | 2015-07-29 |
CN104805406B true CN104805406B (zh) | 2017-06-06 |
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105929862A (zh) * | 2016-04-13 | 2016-09-07 | 广州市尤特新材料有限公司 | 高纯度旋转靶材杂质控制方法 |
CN105714254A (zh) * | 2016-04-21 | 2016-06-29 | 广州市尤特新材料有限公司 | 靶材组件及其制备方法 |
CN109312449B (zh) | 2016-06-07 | 2022-04-12 | Jx金属株式会社 | 溅射靶及其制造方法 |
CN106011758B (zh) * | 2016-07-20 | 2018-10-19 | 浙江舒玛新材料有限公司 | 一种光通信和磁储存镀膜用稀土-过渡金属旋转靶材及其制备方法 |
CN106086567B (zh) * | 2016-08-16 | 2018-05-01 | 北京有色金属与稀土应用研究所 | 一种高钪含量铝钪合金及其制备方法 |
CN106498350A (zh) * | 2016-10-13 | 2017-03-15 | 法柯特科技(江苏)有限公司 | 硅铝溅射靶材的制备方法 |
US20180261439A1 (en) * | 2017-03-13 | 2018-09-13 | Materion Corporation | Aluminum alloys and articles with high uniformity and elemental content |
CN107841639A (zh) * | 2017-12-11 | 2018-03-27 | 基迈克材料科技(苏州)有限公司 | 铝钪合金靶坯及其制备方法及应用 |
CN109554673A (zh) * | 2018-11-02 | 2019-04-02 | 中国科学院宁波材料技术与工程研究所 | 一种铝旋转靶材的冷喷涂制备工艺及其产品 |
KR20220016977A (ko) * | 2019-07-31 | 2022-02-10 | 가부시키가이샤 후루야긴조쿠 | 스퍼터링 타겟 |
CN110983277A (zh) * | 2019-12-30 | 2020-04-10 | 广州市尤特新材料有限公司 | 一种用于钕铁硼永磁材料的旋转稀土靶材及制备方法和修复方法 |
CN112708864B (zh) * | 2020-12-23 | 2022-07-15 | 有研亿金新材料有限公司 | 一种铝钪合金靶材的制造方法 |
CN113249695A (zh) * | 2021-05-18 | 2021-08-13 | 浙江弘康半导体技术有限公司 | 一种导电有机旋转靶材及靶材的制备方法 |
CN114086142A (zh) * | 2021-11-29 | 2022-02-25 | 亚芯半导体材料(江苏)有限公司 | 高熵合金旋转靶材及其冷喷涂的制备方法 |
CN115369350B (zh) * | 2022-07-08 | 2023-07-07 | 太原科技大学 | 一种在氩气保护下的结合电弧喷涂和轧制工艺制备不锈钢精密箔材的方法 |
CN115537746B (zh) * | 2022-10-25 | 2024-04-19 | 洛阳丰联科绑定技术有限公司 | 一种铝钪合金靶材及其制备方法和应用 |
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JP3096699B2 (ja) * | 1991-01-17 | 2000-10-10 | ハネウェル・エレクトロニクス・ジャパン株式会社 | アルミニウム合金配線層およびその製法、ならびにアルミニウム合金スパッタリングターゲット |
BRPI0611451A2 (pt) * | 2005-05-05 | 2010-09-08 | Starck H C Gmbh | processo de revestimento para fabricação ou reprocessamento de alvos de metalização e anodos de raios x |
JP2007226058A (ja) * | 2006-02-24 | 2007-09-06 | Tosoh Corp | 液晶ディスプレイパネル及びその製造方法並びにCu合金スパッタリングターゲット |
US20110300017A1 (en) * | 2009-01-29 | 2011-12-08 | Jx Nippon Mining & Metals Corporation | Method for Manufacturing High-Purity Erbium, High-Purity Erbium, Sputtering Target Composed of High-Purity Erbium, and Metal Gate Film having High-Purity Erbium as Main Component |
TW201040050A (en) * | 2009-05-11 | 2010-11-16 | Univ Nat Central | Aluminum scandium alloy film for use in vehicle lamp and production method thereof |
CN102877033A (zh) * | 2011-07-14 | 2013-01-16 | 北京有色金属研究总院 | 一种锰合金靶材及其制造方法 |
CN103060793A (zh) * | 2013-02-01 | 2013-04-24 | 基迈克材料科技(苏州)有限公司 | 一种以冷喷涂方法制备的难熔金属旋转溅射靶材 |
CN104451582B (zh) * | 2014-12-30 | 2017-09-29 | 北京恒隆科技有限公司 | 一种导电氧化锆旋转靶材及其制备方法 |
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Effective date of registration: 20211126 Address after: 312030 Building 2, Daxizhuang village, Huashe street, Keqiao District, Shaoxing City, Zhejiang Province Patentee after: Xu Congkang Address before: 312030 Building 2, Daxizhuang village, Huashe street, Keqiao District, Shaoxing City, Zhejiang Province Patentee before: Zhejiang Hongkang Semiconductor Technology Co.,Ltd. |
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Effective date of registration: 20211227 Address after: 213000 in business service center, 143 Qingyang North Road, Tianning District, Changzhou City, Jiangsu Province Patentee after: Yaxin semiconductor materials (Jiangsu) Co.,Ltd. Patentee after: Yaxin Electronic Technology (Changzhou) Co., Ltd Address before: 312030 Building 2, Daxizhuang village, Huashe street, Keqiao District, Shaoxing City, Zhejiang Province Patentee before: Xu Congkang |