KR850004129A - 광학기록매체 및 그 제조방법 - Google Patents
광학기록매체 및 그 제조방법 Download PDFInfo
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- KR850004129A KR850004129A KR1019840007139A KR840007139A KR850004129A KR 850004129 A KR850004129 A KR 850004129A KR 1019840007139 A KR1019840007139 A KR 1019840007139A KR 840007139 A KR840007139 A KR 840007139A KR 850004129 A KR850004129 A KR 850004129A
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- Prior art keywords
- optical recording
- manufacturing
- compound
- recording member
- germanium
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- 230000003287 optical effect Effects 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 9
- 229910052732 germanium Inorganic materials 0.000 claims 7
- 150000002291 germanium compounds Chemical class 0.000 claims 6
- 239000006104 solid solution Substances 0.000 claims 6
- 239000003381 stabilizer Substances 0.000 claims 6
- 150000003606 tin compounds Chemical class 0.000 claims 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 5
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- 239000001301 oxygen Substances 0.000 claims 5
- 239000007858 starting material Substances 0.000 claims 5
- 150000003498 tellurium compounds Chemical class 0.000 claims 5
- 238000007740 vapor deposition Methods 0.000 claims 5
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 229910052714 tellurium Inorganic materials 0.000 claims 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24318—Non-metallic elements
- G11B2007/2432—Oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00454—Recording involving phase-change effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 있어서 광학 기록매체의 단면도.
제2도는 그 광학 기록매체에 있어서의 Te, Ge, Sn의 유효한 조성영역을 표시한 조성도.
제3도는 동 광학 기록매체를 제조할때에 사용하는 소결체를 제조하는 전기로의 단면도.
제4도는 그 소결제를 사용해서 광학 기록매체를 제조하는 장치의 단면도.
제5도는 동 광학 기록매체의 분광반사율을 표시한 그래프.
제6도는 동 광학 기록매체의 내습시험 결과를 표시한 그래프.
제7도는 동 광학기록매체의 박막감광층의 증착치수의 차이에 의한 내습특성 차이를 표시한 그래프.
제8도는 동 광학 기록매체에 정보신호를 기록, 재생하는 장치의 개략도.
Claims (24)
- 산소(O), 텔루륨(Te), 게르마늄(Ge) 및 주석(Sn)을 함유하고, 산소의 원자수비가 20at%이상, 60at%이하이고, 동시에 Te, Ge, Sn의 원자수의 비율(Te, Ge, Sn)(%)이 A=(60, 25, 15) B=(60, 15, 25) C=(30, 0, 70) D=(5, 0, 95) E=(10, 90, 0) F=(40, 60, 0)의 각점으로 둘러쌓이는 영역내가 되게 한 기록층을 가진 광학 기록매체.
- 제 1 항에 있어서, Te, Ge, Sn의 원자수의 비율(Te, Ge, Sn)(%)이 G=(50, 40, 10) H=(55, 30, 15) I=(55, 20, 25) J=(35, 20, 45) K=(15, 45, 40) L=(15, 75, 10) M=(20, 75, 5) N=(25, 70, 5)의 각점으로 둘러쌓이는 영역내가 되게한 광학 기록매체.
- 제 1 항에 있어서, 산소의 원자수 비율이 30at% 이상이고 동시에 50at% 이하인 광학 기록매체.
- 제 1 항에 있어서, 기록층의 막두께를 500∼2000Å 사이로 선택한 광학 기록매체.
- 제 1 항에 있어서, 기록층의 양쪽에, 파장 400∼1000mm에 빛에 대해서 투명한 방습층을 형성한 광학 기록매체.
- 제 1 항에 있어서, 투명한 방습층으로서, 2산화규소(SiO2)를 사용한 광학 기록매체.
- 산소(O), 텔루륨(Te), 게르마늄(Ge) 및 주석(Sn)을 함유하고, 산소의 원자수 비가 30at%이상 50at%이하이고, 동시에, Te, Ge, Sn의 원자수의 비율(Te, Ge, Sn)(%) G=(50, 40, 10) H=(55, 30, 15) I=(55, 20, 25) J=(35, 20, 45) K=(15, 45, 40) L=(15, 75, 10) M=(20, 75, 5) N=(25, 70, 5)의 각점으로 둘러쌓이는 영역내가 되게한 기록층을 가진 광학 기록매체.
- 텔루르 화합물, 게르마늄 화합물, 주석화합물 및 알루미늄을 함유하고, 또한 고용체 안정제로서 구리, 아연, 철, 니켈로 이루어진 집단으로 부터 선택되는 적어도 한 가지의 재료를 첨가한 혼합물로 된 출발원료를 열처리하고, 이 열처리에 의해서 얻어진 소결체를 증착원으로 해서 기재상에 증착을 행하므로서, 성분으로서 적어도 Te, O, Ge 및 Sn을 함유하는 기록층을 가진 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 텔루르 화합물은 2산화텔루르인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 텔루르 화합물은 금속텔루르인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 게르마늄 화합물은 게르마늄 산화물인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 게르마늄 화합물은 금속게르마늄인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 주석화합물은 주석산화물인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 주석화합물은 금속광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 고용체 안정제의 첨가량이 5∼50중량%인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 출발원료 조성이 있어서의 게르마늄 화합물(GeX1)과 주석화합물(SnX2)의 합인 알루미늄에 대한 중량비(GeX1+SnX2)/Al이 3∼20의 범위인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 출발원료 조성에 있어서의 텔루르 화합물(TeX3)의 게르마늄 화합물(GeX1)과 주석화합물(SnX2)과의 합에 대한 중량비 TeX3(GeX1+SnX2)가 0.5∼2의 범위인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 출발원료의 열처리 온도가 600∼720℃인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 증착법이 저항가열 증착법 혹은 전자비임 증착법인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 고용체 안정제가 구리인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 고용체 안정제의 첨가량이 5∼50%중량%인 광학기록 부재를 제조하는 방법.
- 제 8 항에 있어서, 고용체 안정제의 첨가량이 10∼40중량%인 광학기록 부재를 제조하는 방법.
- 텔루르 화합물, 게르마늄 화합물, 주석화합물 및 알루미늄 함유하고, 또한 고용체 안정제로서 구리를 첨가한 혼합물로 된 출발원료를 열처리 하고, 이 열처리에 의해서 얻어진 소결체를 종착원으로 해서, 기재상에 증착을 행하므로서, 성분으로서 적어도 Te, O, Ge 및 Sn을 함유하는 기록층을 가진 광학기록 부재를 제조하는 방법.
- TeO2, Ge, Sn, Al, Cu로 이루어진 출발원료를 열처리 하고, 이 열처리에 의해서 얻어진 소결체를 증착원으로 해서 기재상에 증착을 행하므로서, 성분으로서 적어도 Te, O, Ge, Sn을 함유한 기록층을 가진 광학기록 부재를 제조하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58-215489 | 1983-11-15 | ||
| JP215489 | 1983-11-15 | ||
| JP58215489A JPS60107744A (ja) | 1983-11-15 | 1983-11-15 | 光学情報記録部材 |
| JP58-221051 | 1983-11-24 | ||
| JP221051 | 1983-11-24 | ||
| JP58221051A JPS60112490A (ja) | 1983-11-24 | 1983-11-24 | 光学情報記録部材の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR850004129A true KR850004129A (ko) | 1985-07-01 |
| KR890003202B1 KR890003202B1 (ko) | 1989-08-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019840007139A KR890003202B1 (ko) | 1983-11-15 | 1984-11-14 | 광학 기록매체 및 그 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0142968B1 (ko) |
| KR (1) | KR890003202B1 (ko) |
| DE (1) | DE3480240D1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61156545A (ja) * | 1984-12-28 | 1986-07-16 | Tdk Corp | 情報記録媒体および記録方法 |
| DE3675845D1 (de) * | 1985-08-15 | 1991-01-10 | Ibm | Optisches aufzeichnungsverfahren. |
| TW556185B (en) * | 2000-08-17 | 2003-10-01 | Matsushita Electric Ind Co Ltd | Optical information recording medium and the manufacturing method thereof, record reproduction method and record reproduction device |
| WO2004030919A1 (ja) * | 2002-09-30 | 2004-04-15 | Matsushita Electric Industrial Co., Ltd. | 光情報記録担体およびそれを用いた記録再生装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1563513A (en) * | 1975-12-09 | 1980-03-26 | Matsushita Electric Ind Co Ltd | Optical information storage material |
| JPS563442A (en) * | 1979-06-20 | 1981-01-14 | Toshiba Corp | Optical memory disk and its manufacture |
| JPS59185048A (ja) * | 1983-04-01 | 1984-10-20 | Matsushita Electric Ind Co Ltd | 光学情報記録部材及び記録方法 |
| DE3473670D1 (en) * | 1983-06-27 | 1988-09-29 | Matsushita Electric Ind Co Ltd | Method of producing optical recording medium |
-
1984
- 1984-11-09 EP EP84307783A patent/EP0142968B1/en not_active Expired
- 1984-11-09 DE DE8484307783T patent/DE3480240D1/de not_active Expired
- 1984-11-14 KR KR1019840007139A patent/KR890003202B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE3480240D1 (en) | 1989-11-23 |
| EP0142968B1 (en) | 1989-10-18 |
| KR890003202B1 (ko) | 1989-08-26 |
| EP0142968A3 (en) | 1986-01-29 |
| EP0142968A2 (en) | 1985-05-29 |
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