KR920022042A - 위상반전 마스크 제조방법 - Google Patents

위상반전 마스크 제조방법 Download PDF

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Publication number
KR920022042A
KR920022042A KR1019910007710A KR910007710A KR920022042A KR 920022042 A KR920022042 A KR 920022042A KR 1019910007710 A KR1019910007710 A KR 1019910007710A KR 910007710 A KR910007710 A KR 910007710A KR 920022042 A KR920022042 A KR 920022042A
Authority
KR
South Korea
Prior art keywords
film
phase inversion
mask manufacturing
phase reversal
reversal mask
Prior art date
Application number
KR1019910007710A
Other languages
English (en)
Other versions
KR940005608B1 (ko
Inventor
금은섭
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910007710A priority Critical patent/KR940005608B1/ko
Priority to JP10028092A priority patent/JPH06148862A/ja
Priority to DE4215489A priority patent/DE4215489C2/de
Publication of KR920022042A publication Critical patent/KR920022042A/ko
Application granted granted Critical
Publication of KR940005608B1 publication Critical patent/KR940005608B1/ko
Priority to US08/338,982 priority patent/US5728491A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음.

Description

위상반전 마스크 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명 위상반전마스크의 공정단면도,
제3도는 본 발명의 마스크 패턴에 따른 광의 진폭을 나타낸 파형도.

Claims (1)

  1. 석영기판(1) 위에 크롬막(2)을 형성하고 마스킹 공정에 의해 패터닝하여 패터닝된 크롬막들 사이의 일측 간격을 넓게 다른 일측 간격을 좁게 형성하는 공정과, 상기 크롬막(2)이 패터닝된 위에 위상반전막(3)을 형성하는 공정과, 상기 위상반전막(3) 위에 감광막(4)을 형성하고 상기 패터닝된 크롬막(2)을 감싸도록 위상반전막(3)을 패터닝한 후 감광막(4)을 제거하는 공정을 차례로 실시하여서 이루어짐을 특징으로 하는 위상반전마스크 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910007710A 1991-05-13 1991-05-13 위상반전마스크 제조방법 KR940005608B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019910007710A KR940005608B1 (ko) 1991-05-13 1991-05-13 위상반전마스크 제조방법
JP10028092A JPH06148862A (ja) 1991-05-13 1992-03-27 位相反転マスクの製造方法
DE4215489A DE4215489C2 (de) 1991-05-13 1992-05-12 Phasenverschiebungsmaske
US08/338,982 US5728491A (en) 1991-05-13 1994-11-14 Phase shift mask and method of manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910007710A KR940005608B1 (ko) 1991-05-13 1991-05-13 위상반전마스크 제조방법

Publications (2)

Publication Number Publication Date
KR920022042A true KR920022042A (ko) 1992-12-19
KR940005608B1 KR940005608B1 (ko) 1994-06-21

Family

ID=19314372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910007710A KR940005608B1 (ko) 1991-05-13 1991-05-13 위상반전마스크 제조방법

Country Status (4)

Country Link
US (1) US5728491A (ko)
JP (1) JPH06148862A (ko)
KR (1) KR940005608B1 (ko)
DE (1) DE4215489C2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975021B1 (en) * 1999-09-03 2005-12-13 Micron Technology, Inc. Carrier for substrate film
US7062123B2 (en) * 2001-12-31 2006-06-13 3M Innovative Properties Company System for higher-order dispersion compensation
CN108345171B (zh) * 2018-02-11 2020-01-21 京东方科技集团股份有限公司 一种相移掩膜板的制作方法及相移掩膜板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0690507B2 (ja) * 1986-02-17 1994-11-14 株式会社日立製作所 ホトマスク，及びそれを用いた投影露光方法、並びにホトマスクの製造方法
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
US5234780A (en) * 1989-02-13 1993-08-10 Kabushiki Kaisha Toshiba Exposure mask, method of manufacturing the same, and exposure method using the same
JPH0342660A (ja) * 1989-07-10 1991-02-22 Fujitsu Ltd 光学マスク及びそれを使用した露光方法
JPH03235947A (ja) * 1990-02-10 1991-10-21 Dainippon Printing Co Ltd 位相シフト層を有するフォトマスクおよびその製造方法
JP2647232B2 (ja) * 1990-04-25 1997-08-27 三菱電機株式会社 位相シフトマスク及びその製造方法
US5208125A (en) * 1991-07-30 1993-05-04 Micron Technology, Inc. Phase shifting reticle fabrication using ion implantation

Also Published As

Publication number Publication date
JPH06148862A (ja) 1994-05-27
DE4215489A1 (de) 1992-11-19
KR940005608B1 (ko) 1994-06-21
DE4215489C2 (de) 1998-01-22
US5728491A (en) 1998-03-17

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