KR950001940A - 반도체 소자의 패턴형성용 마스크 제조방법 - Google Patents
반도체 소자의 패턴형성용 마스크 제조방법 Download PDFInfo
- Publication number
- KR950001940A KR950001940A KR1019930010486A KR930010486A KR950001940A KR 950001940 A KR950001940 A KR 950001940A KR 1019930010486 A KR1019930010486 A KR 1019930010486A KR 930010486 A KR930010486 A KR 930010486A KR 950001940 A KR950001940 A KR 950001940A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- quartz glass
- forming
- mask
- pattern
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 230000007261 regionalization Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract 5
- 239000011651 chromium Substances 0.000 claims abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
본 발명은 반도체 소자의 제조공정중 광학적 리소그래피(Optical Lithography) 공정에 사용하기 위한 반도체 소자의 패턴형성용 마스크 제조방법에 관한 것으로, 크롬패턴에 의한 광 흡수 및 반사광에너지를 웨이퍼상의 이미지 형성 에너지로 이용하도록 석영유리와 크롬 사이에 반사강도가 높은 물질을 도포하고, 광의 정재파 효과를 이용하여 석영유리의 두께를 조절하여, 반도체 소자의 미세패턴 형성시 마스크에 조밀하게 형성된 패턴의 광 통과부분에 노광에너지를 증대시킬 수 있는 마스크 제조방법을 기술한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2A도 내지 제2D도는 본 발명에 의한 반도체 소자의 패턴형성용 마스크를 제조하는 단계를 나타낸 단면도.
Claims (4)
- 반도체 소자의 패턴형성용 마스크 제조방법에 있어서, 소정의 두께를 갖는 석영유리(21) 상부에 반사막(23) 및 크롬(22)을 적층 형성하는 단계와, 상기 크롬(22)상에 감광막(24)을 도포한 다음, 상기 감광막(24)을 패턴화하는 단계와, 상기 패턴화된 감광막(24)을 이용하여 크롬(22) 및 반사막(23)을 차례로 식각하는 단계와, 상기 단계로부터 석영유리(21)의 노출된 부분을 소정의 깊이로 식각하고, 상기 감광막(24)을 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 패턴형성용 마스크 제조방법.
- 제1항에 있어서, 상기 반사막(23)은 A1, Ag인 것을 특징으로 하는 반도체 소자의 패턴형성용 마스크 제조방법.
- 제1항에 있어서, 상기 석영유리(21)의 두께는, 반사막(23)과 경계면(30) 사이의 석영유리(21) 두께 d가 정재파에서 파형의 골부분이 되는 조건 d·Sinθ=1/4·(2n-1)·λ가 되도독 하고, 반사막(23)이 없는 빛이 투과되는 지역의 석영유리(21) 두께 d´가 정재파에서 파형의 마루부분이 되는 조건 d´·Sinθ=1/4·(2n-1)·λ(단, 상기 n은 양의 정수이고, θ는 반사광의 각도이다.)가 되도록 형성하는 것을 특징으로 하는 반도체 소자의 패턴형성용 마스크 제조방법.
- 제1항에 있어서, 감광막상에 노광에너지를 증대시키기 위하여 상기 반사막(23)을 제거한 상태에서 상기 석영유리(21)의 두께를 조절하는 것을 특징으로 하는 반도체 소자의 패턴형성용 마스크 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930010486A KR960015792B1 (ko) | 1993-06-10 | 1993-06-10 | 반도체 소자의 패턴형성용 마스크 제조방법 |
JP12605994A JP2704938B2 (ja) | 1993-06-10 | 1994-06-08 | 半導体素子のパターン形成用マスク製造方法 |
US08/257,252 US5449578A (en) | 1993-06-10 | 1994-06-08 | Method of manufacturing a mask for forming a pattern in a semiconductor device |
DE4420417A DE4420417C2 (de) | 1993-06-10 | 1994-06-10 | Verfahren zur Herstellung einer Maske zur Erzeugung eines Musters auf einem Halbleiterbauelement |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930010486A KR960015792B1 (ko) | 1993-06-10 | 1993-06-10 | 반도체 소자의 패턴형성용 마스크 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950001940A true KR950001940A (ko) | 1995-01-04 |
KR960015792B1 KR960015792B1 (ko) | 1996-11-21 |
Family
ID=19357145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930010486A KR960015792B1 (ko) | 1993-06-10 | 1993-06-10 | 반도체 소자의 패턴형성용 마스크 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5449578A (ko) |
JP (1) | JP2704938B2 (ko) |
KR (1) | KR960015792B1 (ko) |
DE (1) | DE4420417C2 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6567013B1 (en) * | 1998-08-13 | 2003-05-20 | Halliburton Energy Services, Inc. | Digital hydraulic well control system |
US6232247B1 (en) | 1999-09-01 | 2001-05-15 | Micron Technology, Inc. | Substrate coating apparatus and semiconductor processing method of improving uniformity of liquid deposition |
US6555276B2 (en) | 1999-10-04 | 2003-04-29 | Micron Technology, Inc. | Substrate coating and semiconductor processing method of improving uniformity of liquid deposition |
US6444372B1 (en) * | 1999-10-25 | 2002-09-03 | Svg Lithography Systems, Inc. | Non absorbing reticle and method of making same |
US9566718B2 (en) * | 2013-10-07 | 2017-02-14 | Techsouth, Inc. | Saw guide |
KR102286886B1 (ko) * | 2014-11-18 | 2021-08-09 | 삼성디스플레이 주식회사 | 포토 마스크 및 이의 제조 방법 |
CN112180678A (zh) * | 2020-11-13 | 2021-01-05 | 泉芯集成电路制造(济南)有限公司 | 一种光罩工艺误差修正方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5279911A (en) * | 1990-07-23 | 1994-01-18 | Mitsubishi Denki Kabushiki Kaisha | Photomask |
JPH0823686B2 (ja) * | 1990-07-24 | 1996-03-06 | 凸版印刷株式会社 | レーザーマスク |
-
1993
- 1993-06-10 KR KR1019930010486A patent/KR960015792B1/ko not_active IP Right Cessation
-
1994
- 1994-06-08 US US08/257,252 patent/US5449578A/en not_active Expired - Lifetime
- 1994-06-08 JP JP12605994A patent/JP2704938B2/ja not_active Expired - Fee Related
- 1994-06-10 DE DE4420417A patent/DE4420417C2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE4420417C2 (de) | 2002-07-18 |
US5449578A (en) | 1995-09-12 |
KR960015792B1 (ko) | 1996-11-21 |
JP2704938B2 (ja) | 1998-01-26 |
DE4420417A1 (de) | 1994-12-15 |
JPH07146543A (ja) | 1995-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5480047A (en) | Method for forming a fine resist pattern | |
CA1190082A (en) | Phase-shifting production mask for photolithography | |
JP2996127B2 (ja) | パターン形成方法 | |
GB2286256A (en) | A method for forming a pattern in photoresists on semiconductor devices | |
KR950001940A (ko) | 반도체 소자의 패턴형성용 마스크 제조방법 | |
KR100244285B1 (ko) | 위상반전 마스크 및 그 제조방법 | |
KR950021058A (ko) | 위상반전마스크 제조방법 | |
EP0517382A1 (en) | Method for forming resist mask pattern by light exposure | |
KR900015229A (ko) | 새도우마스크의 패턴 프린터 및 그 제조방법 | |
KR930018661A (ko) | 콘택트홀의 형성방법 | |
JP3091886B2 (ja) | レジストパターンの形成方法 | |
KR970004479B1 (ko) | 위상반전마스크 및 그 제조방법 | |
JPH0547623A (ja) | 光露光によるレジストマスクパターン形成方法 | |
KR100277933B1 (ko) | 위상반전마스크제조방법 | |
KR960011465B1 (ko) | 반도체 제조용 위상반전 마스크 제조방법 | |
KR100307523B1 (ko) | 반도체노광장비용광학계의해상력향상장치 | |
JPH09232217A (ja) | レジストパターンの形成方法 | |
KR100772784B1 (ko) | 이유브이 노광 공정용 위상반전 마스크 및 그 제조 방법 | |
KR950030228A (ko) | 포토마스크 및 그 제조방법 | |
KR950015617A (ko) | 반도체소자의 미세패턴 제조방법 | |
KR970009857B1 (ko) | 반도체소자의 미세패턴 제조방법 | |
KR950004397A (ko) | 반도체 제조용 크롬 마스크의 결함 제거방법 | |
Asai et al. | KrF Trilayer Resist System using Azide-Phenol Resin Resist | |
KR950003915A (ko) | 반도체 제조용 마스크 제조방법 | |
KR950012630A (ko) | 위상반전 마스크 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20111024 Year of fee payment: 16 |
|
LAPS | Lapse due to unpaid annual fee |