KR920010778A - 플라즈마 에칭장치 - Google Patents

플라즈마 에칭장치 Download PDF

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Publication number
KR920010778A
KR920010778A KR1019910021527A KR910021527A KR920010778A KR 920010778 A KR920010778 A KR 920010778A KR 1019910021527 A KR1019910021527 A KR 1019910021527A KR 910021527 A KR910021527 A KR 910021527A KR 920010778 A KR920010778 A KR 920010778A
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South Korea
Prior art keywords
susceptor
plasma etching
etching apparatus
heat transfer
transfer gas
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KR1019910021527A
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English (en)
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KR100239389B1 (ko
Inventor
도시히사 노자와
쥰이찌 아라미
게이지 호리오까
이사히로 하세가와
Original Assignee
이노우에 아끼라
도꾜 일렉트론 리미티드
아오이 죠이찌
가부시끼가이샤 도시바
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Publication of KR920010778A publication Critical patent/KR920010778A/ko
Application granted granted Critical
Publication of KR100239389B1 publication Critical patent/KR100239389B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

내용 없음

Description

플라즈마 에칭장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 관한 마그네트론 플라즈마 에칭장치의 주요부를 절결하여 나타내는 기구 블록도,
제2도는 서셉터 주변의 상호 접촉면에 생기는 미소한 간격 및 가스공급통로를 나타내는 부분확대 단면도,
제3도는 자동압력 조정기(APC)의 내부 구성을 나타내는 블록도.

Claims (14)

  1. 피처리체를 재치 고정하는 서셉터와, 상기 서셉터를 저온역까지 신속하게 냉각하는 고냉각 능력의 냉매를 가지는 냉각부와, 상기 서셉터 및 상기 냉각부를 둘러싸는 프로세스 챔버와, 상기 프로세스 챔버내의 가스를 진공 배기하는 배기수단과, 상기 서셉터와 상기 냉각부와의 사이에 개재하는 부재와, 상기 개재부재와 상기 서셉터와의 상호 접촉면부, 상기 개재부재와 상기 냉각와의 상호 접촉면부, 상기 서셉터의 구성부재끼리의 상호 접촉면부의 가운데 적어도 하나에 열전달 가스를 공급하는 가스공급수단과, 상기 열전달가스의 공급압력을 제어하는 압력제어수단을 가지는 것을 포함하는 플라즈마 에칭장치.
  2. 제1항에 있어서, 또한, 서셉터를 가열하기 위한 가열수단이 서셉터내에 매립되어 있는 것을 포함하는 플라즈마 에칭장치.
  3. 제2항에 있어서, 또한, 서셉터의 온도를 검출하는 온도검출수단을 가지고, 이 온도검출 결과에 기인하여 상기 가열수단에 의한 서셉터의 가열 동작이 제어되는 것을 포함하는 플라즈마 에칭장치.
  4. 제1항에 있어서, 또한, 서셉터의 온도를 검출하는 온도검출수단을 가지고, 이 온도검출결과에 기인하여 상기 압력제어 수단에 의해 상기 열전달 가스의 공급압력이 제어되는 것을 포함하는 플라즈마 에칭장치.
  5. 제1항에 있어서, 또한, 피처리체와 서셉터와의 상호 접촉면부에 상기 열전달 가스를 공급하는 수단을 가지고, 이 가스공급압력이 상기 압력제어 수단에 의해 제어되는 것을 포함하는 플라즈마 에칭장치.
  6. 제1항에 있어서, 상기 개재부재가 서셉터와 냉각부를 절연하는 절연부재인 것을 포함하는 플라즈마 에칭장치.
  7. 제1항에 있어서, 상기 압력제어 수단에 의해 개재부재의 서셉터와의 상호 접촉면부에 공급하는 상기 열전달 가스의 압력을 제어하는 것을 포함하는 플라즈마 에칭장치.
  8. 제1항에 있어서, 상기 압력제어 수단에 의해 개재부재의 냉각부와의 상호 접촉면부에 공급하는 상기 열전달 가스의 압력을 제어하는 것을 포함하는 플라즈마 에칭장치.
  9. 제1항에 있어서, 상기 압력 제어수단에 의해 서셉터의 구성부재끼리의 상호 접촉면부에 공급하는 상기 열전달 가스의 압력을 제어하는 것을 포함하는 플라즈마 에칭장치.
  10. 제1항에 있어서, 상기 가열수단과 서셉터의 사이의 상호 접촉면부에 공급하는 상기 열전달 가스의 압력도 제어하는 것을 포함하는 플라즈마 에칭장치.
  11. 제1항에 있어서, 또한, 서셉터의 구성부재끼리의 접촉상태를 조절하는 수단을 가지는 것을 포함하는 플라즈마 에칭장치.
  12. 제1항에 있어서, 상기 가스도입부가 프로세스챔버의 처리분 위기에서 차단시일되어 있는 것을 포함하는 플라즈마 에칭장치.
  13. 제1항에 있어서, 0링 유지용의 홈을 통하여 상기 열전달 가스를 각 부재간의 산호 접촉면부에 공급하는 것을 포함하는 플라즈마 에칭장치.
  14. 제1항에 있어서, 상기 열전달 가스에는 불활성 가스를 이용하는 것을 포함하는 플라즈마 에칭장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910021527A 1990-11-28 1991-11-28 플라즈마 에칭장치 KR100239389B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2331317A JPH04196528A (ja) 1990-11-28 1990-11-28 マグネトロンエッチング装置
JP90-331317 1990-11-28

Publications (2)

Publication Number Publication Date
KR920010778A true KR920010778A (ko) 1992-06-27
KR100239389B1 KR100239389B1 (ko) 2000-01-15

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Country Status (5)

Country Link
US (1) US5290381A (ko)
EP (1) EP0488307B1 (ko)
JP (1) JPH04196528A (ko)
KR (1) KR100239389B1 (ko)
DE (1) DE69120377T2 (ko)

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* Cited by examiner, † Cited by third party
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EP0488307A2 (en) 1992-06-03
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DE69120377D1 (de) 1996-07-25
DE69120377T2 (de) 1996-11-28
KR100239389B1 (ko) 2000-01-15
JPH04196528A (ja) 1992-07-16
US5290381A (en) 1994-03-01

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