ATE169772T1 - Quasi-infinite heat source/sink - Google Patents

Quasi-infinite heat source/sink

Info

Publication number
ATE169772T1
ATE169772T1 AT94117081T AT94117081T ATE169772T1 AT E169772 T1 ATE169772 T1 AT E169772T1 AT 94117081 T AT94117081 T AT 94117081T AT 94117081 T AT94117081 T AT 94117081T AT E169772 T1 ATE169772 T1 AT E169772T1
Authority
AT
Austria
Prior art keywords
temperature
sink
pressure
wafer
heat source
Prior art date
Application number
AT94117081T
Other languages
English (en)
Inventor
Gregory W White
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE169772T1 publication Critical patent/ATE169772T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Lubricants (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Amplifiers (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Temperature (AREA)
AT94117081T 1993-10-29 1994-10-28 Quasi-infinite heat source/sink ATE169772T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/145,459 US5676205A (en) 1993-10-29 1993-10-29 Quasi-infinite heat source/sink

Publications (1)

Publication Number Publication Date
ATE169772T1 true ATE169772T1 (de) 1998-08-15

Family

ID=22513227

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94117081T ATE169772T1 (de) 1993-10-29 1994-10-28 Quasi-infinite heat source/sink

Country Status (6)

Country Link
US (1) US5676205A (de)
EP (1) EP0651424B1 (de)
JP (1) JPH07176601A (de)
KR (1) KR950012674A (de)
AT (1) ATE169772T1 (de)
DE (1) DE69412420T2 (de)

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US5663488A (en) * 1995-05-31 1997-09-02 Hewlett-Packard Co. Thermal isolation system in an analytical instrument
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US6002109A (en) 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
US5625152A (en) * 1996-01-16 1997-04-29 Mks Instruments, Inc. Heated pressure transducer assembly
JP3554219B2 (ja) * 1998-03-31 2004-08-18 キヤノン株式会社 排気装置と排気方法、および堆積膜形成装置と堆積膜形成方法
US6169271B1 (en) 1998-07-13 2001-01-02 Mattson Technology, Inc. Model based method for wafer temperature control in a thermal processing system for semiconductor manufacturing
US6166898A (en) * 1998-10-30 2000-12-26 Promos Technologies, Inc. Plasma chamber wafer clamping ring with erosion resistive tips
US6635580B1 (en) * 1999-04-01 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd. Apparatus and method for controlling wafer temperature in a plasma etcher
EP1297560A2 (de) * 2000-07-06 2003-04-02 Applied Materials, Inc. Wärmebehandlung von einer halbleiterscheibe
JP2002050809A (ja) * 2000-08-01 2002-02-15 Anelva Corp 基板処理装置及び方法
JP4620879B2 (ja) * 2001-01-23 2011-01-26 キヤノンアネルバ株式会社 基板温度制御機構及び真空処理装置
JP4578701B2 (ja) * 2001-02-26 2010-11-10 キヤノンアネルバ株式会社 基板処理方法
US6564811B2 (en) * 2001-03-26 2003-05-20 Intel Corporation Method of reducing residue deposition onto ash chamber base surfaces
US6959554B1 (en) * 2001-07-10 2005-11-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Passive gas-gap heat switch for adiabatic demagnetization refrigerator
JP4493251B2 (ja) * 2001-12-04 2010-06-30 Ｔｏｔｏ株式会社 静電チャックモジュールおよび基板処理装置
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
KR100452318B1 (ko) * 2002-01-17 2004-10-12 삼성전자주식회사 압력조절시스템 및 이를 이용하는 압력조절방법
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US7582186B2 (en) * 2002-12-20 2009-09-01 Tokyo Electron Limited Method and apparatus for an improved focus ring in a plasma processing system
JP4186644B2 (ja) * 2003-02-17 2008-11-26 株式会社Ｉｈｉ 真空処理装置の冷却装置
US20060105182A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US7221553B2 (en) * 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US6976782B1 (en) * 2003-11-24 2005-12-20 Lam Research Corporation Methods and apparatus for in situ substrate temperature monitoring
US20050109276A1 (en) * 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20060025049A1 (en) * 2004-07-30 2006-02-02 Applied Materials, Inc. Spray slurry delivery system for polish performance improvement and cost reduction
US20070082507A1 (en) * 2005-10-06 2007-04-12 Applied Materials, Inc. Method and apparatus for the low temperature deposition of doped silicon nitride films
US20080145536A1 (en) * 2006-12-13 2008-06-19 Applied Materials, Inc. METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SiBN DEPOSITION
JP5148955B2 (ja) * 2007-09-11 2013-02-20 東京エレクトロン株式会社 基板載置機構及び基板処理装置
JP2009084686A (ja) 2007-09-11 2009-04-23 Tokyo Electron Ltd 基板載置機構、基板処理装置、基板載置機構上への膜堆積抑制方法及び記憶媒体
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US8333842B2 (en) * 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
US20110068084A1 (en) * 2008-07-10 2011-03-24 Canon Anelva Corporation Substrate holder and substrate temperature control method
JP5262878B2 (ja) * 2009-03-17 2013-08-14 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
WO2012148568A1 (en) * 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
JP7224139B2 (ja) * 2018-10-25 2023-02-17 東京エレクトロン株式会社 ステージ装置および処理装置
US10866036B1 (en) 2020-05-18 2020-12-15 Envertic Thermal Systems, Llc Thermal switch

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US3225820A (en) * 1962-11-01 1965-12-28 Gen Precision Inc Device for controlling temperature by heat conduction
US3270802A (en) * 1963-01-10 1966-09-06 Jay G Lindberg Method and apparatus for varying thermal conductivity
US3450196A (en) * 1967-08-30 1969-06-17 Trw Inc Gas pressure control for varying thermal conductivity
US3602004A (en) * 1969-04-02 1971-08-31 American Air Filter Co Heat exchange device
AU497893B2 (en) * 1975-07-29 1979-01-18 Buckley, Bruce Shawn Controllable heat transmission apparatus
DE3118433A1 (de) * 1981-05-09 1982-11-25 Dornier System Gmbh, 7990 Friedrichshafen "verfahren und vorrichtung zum thermisch gesteuerten und ueberhitzungssicheren schalten und regeln"
US4689970A (en) * 1985-06-29 1987-09-01 Kabushiki Kaisha Toshiba Cryogenic apparatus
US4771823A (en) * 1987-08-20 1988-09-20 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Self-actuating heat switches for redundant refrigeration systems
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
DE3819114A1 (de) * 1988-06-04 1989-12-14 Wilhelm Chr Dr Buck Betaetigungsvorrichtung fuer eine verstellbare ventilspindel
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
JPH04196528A (ja) * 1990-11-28 1992-07-16 Toshiba Corp マグネトロンエッチング装置
US5186238A (en) * 1991-04-25 1993-02-16 International Business Machines Corporation Liquid film interface cooling chuck for semiconductor wafer processing
JP2778284B2 (ja) * 1991-05-29 1998-07-23 三菱電機株式会社 加熱装置

Also Published As

Publication number Publication date
EP0651424B1 (en) 1998-08-12
DE69412420D1 (de) 1998-09-17
JPH07176601A (ja) 1995-07-14
US5676205A (en) 1997-10-14
KR950012674A (ko) 1995-05-16
EP0651424A3 (de) 1995-09-20
EP0651424A2 (de) 1995-05-03
DE69412420T2 (de) 1999-04-29

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