KR920005323A - 반도체 집적회로 - Google Patents

반도체 집적회로 Download PDF

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Publication number
KR920005323A
KR920005323A KR1019910013233A KR910013233A KR920005323A KR 920005323 A KR920005323 A KR 920005323A KR 1019910013233 A KR1019910013233 A KR 1019910013233A KR 910013233 A KR910013233 A KR 910013233A KR 920005323 A KR920005323 A KR 920005323A
Authority
KR
South Korea
Prior art keywords
semiconductor integrated
integrated circuit
bipolar
pull
ion implantation
Prior art date
Application number
KR1019910013233A
Other languages
English (en)
Inventor
야스히로 스기모또
히로유끼 하라
Original Assignee
아오이 죠이찌
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이찌, 가부시끼가이샤 도시바 filed Critical 아오이 죠이찌
Publication of KR920005323A publication Critical patent/KR920005323A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11896—Masterslice integrated circuits using combined field effect/bipolar technology

Abstract

내용 없음

Description

반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 집적 회로의 한 실시예에 관한 BiㆍCMOS 게이트 어레이에 내장된 기본 게이트로서 이용되는 BiㆍCMOS 게이트 회로의 한 예를 도시한 회로도.
제2도는 SIC 구조를 갖는 바이폴라 트랜지스터의 구조의 한 예를 도시한 단면도.
제3도(a) 및 (b)는 SIC 구조를 갖는 바이폴라 트랜지스터의 콜렉터 전류의 대(大)전류 영역에 있어서 차단 주파수(fT) 및 전류 증폭을 (hfe)가 개선되는 상태를 도시한 특성도.

Claims (1)

  1. 바이폴라ㆍ상보성 절연 게이트형 게이트 회로를 갖고 있는 반도체 집적 회로에 있어서, 바이폴라ㆍ상보성 절연 게이트형 게이트 회로의 출력단 바이폴라 트랜지스터의 풀업축 및 풀다운축의 적어도 한 쪽의 트랜지스터(Q2″)가, 에미터(28)바로 아래의 콜렉터ㆍ웰(22)보다도 불순물 농도가 높은 영역(33)이 콜렉터ㆍ웰 중의 베이스 영역(26 및 27)경계 부근에 선택적으로 이온 주입에 의해 형성된 선택적 이온 주입 콜렉터 구조를 갖는 것을 특징으로 하는 반도체 집적 회로.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019910013233A 1990-08-01 1991-07-31 반도체 집적회로 KR920005323A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-204539 1990-08-01
JP2204539A JPH0491467A (ja) 1990-08-01 1990-08-01 半導体集積回路

Publications (1)

Publication Number Publication Date
KR920005323A true KR920005323A (ko) 1992-03-28

Family

ID=16492208

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910013233A KR920005323A (ko) 1990-08-01 1991-07-31 반도체 집적회로

Country Status (3)

Country Link
EP (1) EP0472945A3 (ko)
JP (1) JPH0491467A (ko)
KR (1) KR920005323A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3006464B2 (ja) * 1995-08-30 2000-02-07 日本電気株式会社 Ｂｉ−ＣＭＯＳ半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Ind Co Ltd Semiconductor ic and method of making the same
JPH01244660A (ja) * 1988-03-26 1989-09-29 Nec Corp Ｂｉ−ＣＭＯＳ半導体装置の製造方法

Also Published As

Publication number Publication date
EP0472945A3 (en) 1992-06-17
JPH0491467A (ja) 1992-03-24
EP0472945A2 (en) 1992-03-04

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application