KR920004848B1 - 레이저 스퍼터링장치 - Google Patents
레이저 스퍼터링장치 Download PDFInfo
- Publication number
- KR920004848B1 KR920004848B1 KR1019900011497A KR900011497A KR920004848B1 KR 920004848 B1 KR920004848 B1 KR 920004848B1 KR 1019900011497 A KR1019900011497 A KR 1019900011497A KR 900011497 A KR900011497 A KR 900011497A KR 920004848 B1 KR920004848 B1 KR 920004848B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- vacuum
- chamber
- laser
- sputtering
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 35
- 239000010408 film Substances 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 24
- 238000007740 vapor deposition Methods 0.000 claims description 13
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 description 21
- 239000000203 mixture Substances 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (4)
- 진공조와, 레이저광을 출력하는 레이저와, 레이저광을 진공조내에 도입하도록 진공조에 형성된 진공시일창과, 기판에 형성해야할 박막의 재료를 증착된 레이저투과율이 높은 필름을, 그 박막재료쪽을 진공시일창과는 반대쪽으로 향해서 진공시일창의 안쪽위치를 통과하도록 이송하는 필름이송수단과, 상기 필름을 사이에 끼우고 상기 진공시일창과 대향하도록 배치된 기판들을 구비한 것을 특징으로 하는 레이저스퍼터링장치.
- 제 1 항에 있어서, 필름에 재질이 다른 복수의 재료가 적층해서 증착되어 있는 것을 특징으로 하는 레이저스퍼터링장치.
- 제 1 항 또는 제 2 항에 있어서, 진공조내에, 필름에 증착되는 재료의 증발원을 배설하고, 진공조내에서 필름에 재료가 증차되도록 한 것을 특징으로 하는 레이저스퍼터링장치.
- 제 3 항에 있어서, 진공조내를, 필름 재료를 증착하는 증착된, 증착실과 필름에 증착된 레이저량을 조사해서 스퍼터를 행하는 스퍼터링실에, 필름의 통과를 허용하는 간막이벽에 의해서 구획하는 동시에, 각실에 진공배기 수단을 배설하고, 스퍼터링실에 반응성가스의 도입수단을 설치한 것을 특징으로 하는 레이어스퍼터장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-197747 | 1989-07-28 | ||
JP1-197747 | 1989-07-28 | ||
JP1197747A JPH0361366A (ja) | 1989-07-28 | 1989-07-28 | レーザースパッタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910003141A KR910003141A (ko) | 1991-02-27 |
KR920004848B1 true KR920004848B1 (ko) | 1992-06-19 |
Family
ID=16379670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900011497A KR920004848B1 (ko) | 1989-07-28 | 1990-07-27 | 레이저 스퍼터링장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5065697A (ko) |
JP (1) | JPH0361366A (ko) |
KR (1) | KR920004848B1 (ko) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1991005342A1 (en) * | 1989-09-28 | 1991-04-18 | Matsushita Electric Industrial Co., Ltd. | Optical data recording medium and method of producing the same |
US5211824A (en) * | 1991-10-31 | 1993-05-18 | Siemens Solar Industries L.P. | Method and apparatus for sputtering of a liquid |
DE4203631C2 (de) * | 1992-02-08 | 2000-06-08 | Leybold Ag | Vorrichtung für die Behandlung einer Oxidschicht |
JPH05331632A (ja) * | 1992-06-01 | 1993-12-14 | Matsushita Electric Ind Co Ltd | レーザーアブレーション装置と薄膜形成方法 |
DE4232373A1 (de) * | 1992-09-03 | 1994-03-10 | Deutsche Forsch Luft Raumfahrt | Verfahren zum Auftragen strukturierter Schichten |
US5420437A (en) * | 1994-01-11 | 1995-05-30 | Siess; Harold E. | Method and apparatus for generation and implantation of ions |
US5904961A (en) * | 1997-01-24 | 1999-05-18 | Eastman Kodak Company | Method of depositing organic layers in organic light emitting devices |
US6709720B2 (en) * | 1997-03-21 | 2004-03-23 | Kabushiki Kaisha Yaskawa Denki | Marking method and marking material |
EP1099183A4 (en) * | 1999-05-24 | 2004-12-15 | Potomac Photonics Inc | MATERIAL SUPPLY SYSTEM FOR MANUFACTURING MINIATURE STRUCTURE |
US6440503B1 (en) * | 2000-02-25 | 2002-08-27 | Scimed Life Systems, Inc. | Laser deposition of elements onto medical devices |
US20030230238A1 (en) * | 2002-06-03 | 2003-12-18 | Fotios Papadimitrakopoulos | Single-pass growth of multilayer patterned electronic and photonic devices using a scanning localized evaporation methodology (SLEM) |
US6955725B2 (en) | 2002-08-15 | 2005-10-18 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
US7581511B2 (en) | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7478637B2 (en) * | 2004-11-09 | 2009-01-20 | Philip Morris Usa Inc. | Continuous process for surface modification of cigarette filter materials |
KR20060081015A (ko) * | 2005-01-06 | 2006-07-12 | 삼성에스디아이 주식회사 | 진공 증착기 |
JP4849829B2 (ja) * | 2005-05-15 | 2012-01-11 | 株式会社ソニー・コンピュータエンタテインメント | センタ装置 |
US20090110848A1 (en) * | 2007-10-25 | 2009-04-30 | Los Alamos National Security, Llc | Method and apparatus for high-pressure atomic-beam laser induced deposition/etching |
WO2011026971A1 (de) * | 2009-09-04 | 2011-03-10 | Von Ardenne Anlagentechnik Gmbh | Verfahren und vorrichtung zur beschichtung von substraten aus der dampfphase |
DE102009007587B4 (de) | 2009-02-05 | 2011-06-01 | Von Ardenne Anlagentechnik Gmbh | Verfahren und Vorrichtung zur Beschichtung von Substraten aus der Dampfphase |
TW201205761A (en) * | 2010-05-17 | 2012-02-01 | Tno | Through silicon via treatment device and method arranged for treatment of TSVs in a chip manufacturing process |
JP5559924B1 (ja) * | 2013-09-05 | 2014-07-23 | 株式会社フジクラ | プリント配線板及び該配線板を接続するコネクタ |
JP5559925B1 (ja) * | 2013-09-05 | 2014-07-23 | 株式会社フジクラ | プリント配線板及び該配線板を接続するコネクタ |
JP5697724B2 (ja) * | 2013-09-05 | 2015-04-08 | 株式会社フジクラ | プリント配線板及び該配線板を接続するコネクタ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2083740A5 (en) * | 1970-03-20 | 1971-12-17 | Thomson Csf | Laser applied surface film |
EP0113167A3 (en) * | 1982-10-14 | 1986-06-18 | Autotype International Limited | Laser imaging materials |
DE3472574D1 (en) * | 1983-10-14 | 1988-08-11 | Hitachi Ltd | Process for forming an organic thin film |
JPS62294164A (ja) * | 1986-06-13 | 1987-12-21 | Sony Corp | 蒸着方法及び蒸着装置 |
JPS63103031A (ja) * | 1986-10-17 | 1988-05-07 | Chiyoe Yamanaka | レ−ザ−ウラン濃縮用のウラン原子蒸気発生方法とウラン原子蒸気発生装置及び金属ウランタ−ゲツト体 |
-
1989
- 1989-07-28 JP JP1197747A patent/JPH0361366A/ja active Pending
-
1990
- 1990-07-27 US US07/559,270 patent/US5065697A/en not_active Expired - Fee Related
- 1990-07-27 KR KR1019900011497A patent/KR920004848B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0361366A (ja) | 1991-03-18 |
KR910003141A (ko) | 1991-02-27 |
US5065697A (en) | 1991-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920004848B1 (ko) | 레이저 스퍼터링장치 | |
US5454919A (en) | Depositing different materials on a substrate | |
JPS6053745B2 (ja) | 二元蒸着によつて不均質光学的薄膜を形成する方法 | |
JPS6021224B2 (ja) | レーザー薄膜形成装置 | |
JP2012052180A (ja) | 蒸着フラックス測定装置および真空蒸着装置 | |
JPH03142921A (ja) | 3―5族化合物半導体薄膜製造装置 | |
JPH06172979A (ja) | 薄膜パターン形成装置 | |
JPH08165559A (ja) | 機能性フィルムの成膜装置及び成膜方法 | |
JP3750368B2 (ja) | 真空蒸着装置 | |
JPS63137163A (ja) | レ−ザ蒸着式複合膜形成装置 | |
JPS61174371A (ja) | 薄膜作成装置 | |
JPS5842770A (ja) | 蒸発源からの蒸気流を阻止する装置 | |
JPH02107770A (ja) | 連続真空蒸着装置 | |
JP2890686B2 (ja) | レーザ・スパッタリング装置 | |
JPH0547631B2 (ko) | ||
JP2959023B2 (ja) | イオンビームスパッタ装置 | |
JPH08225929A (ja) | レーザ・アブレーションを用いた薄膜形成法およびレーザ・アブレーション装置 | |
JP2922058B2 (ja) | 薄膜作成方法と薄膜作成装置 | |
GB2273110A (en) | Depositing different materials on a substrate by controlling degree of exposure | |
JPS62112776A (ja) | イオンプレ−テイング装置 | |
JP3500172B2 (ja) | 分子線エピタキシー装置 | |
KR940019880A (ko) | 레이저 애블레이션장치 및 그것을 사용한 반도체장치 | |
JPS6277456A (ja) | レ−ザ蒸着装置 | |
Hayashi et al. | Fabrication and Microstructural Change of PMN-PT Thin Films on Si Substrates by PLD with Mask and Double-Pulse Lazer Excitation | |
JPS6353258A (ja) | Pvd方法および装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19900727 |
|
PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19900727 Comment text: Request for Examination of Application |
|
PG1501 | Laying open of application | ||
G160 | Decision to publish patent application | ||
PG1605 | Publication of application before grant of patent |
Comment text: Decision on Publication of Application Patent event code: PG16051S01I Patent event date: 19920522 |
|
E701 | Decision to grant or registration of patent right | ||
PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19920915 |
|
GRNT | Written decision to grant | ||
PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 19920923 Patent event code: PR07011E01D |
|
PR1002 | Payment of registration fee |
Payment date: 19920923 End annual number: 3 Start annual number: 1 |
|
PR1001 | Payment of annual fee |
Payment date: 19950616 Start annual number: 4 End annual number: 4 |
|
PR1001 | Payment of annual fee |
Payment date: 19960613 Start annual number: 5 End annual number: 5 |
|
PR1001 | Payment of annual fee |
Payment date: 19970618 Start annual number: 6 End annual number: 6 |
|
PR1001 | Payment of annual fee |
Payment date: 19980610 Start annual number: 7 End annual number: 7 |
|
PR1001 | Payment of annual fee |
Payment date: 19990607 Start annual number: 8 End annual number: 8 |
|
PR1001 | Payment of annual fee |
Payment date: 20000614 Start annual number: 9 End annual number: 9 |
|
PR1001 | Payment of annual fee |
Payment date: 20010615 Start annual number: 10 End annual number: 10 |
|
FPAY | Annual fee payment |
Payment date: 20020610 Year of fee payment: 11 |
|
PR1001 | Payment of annual fee |
Payment date: 20020610 Start annual number: 11 End annual number: 11 |
|
LAPS | Lapse due to unpaid annual fee | ||
PC1903 | Unpaid annual fee |