KR940019880A - 레이저 애블레이션장치 및 그것을 사용한 반도체장치 - Google Patents
레이저 애블레이션장치 및 그것을 사용한 반도체장치 Download PDFInfo
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- KR940019880A KR940019880A KR1019940003177A KR19940003177A KR940019880A KR 940019880 A KR940019880 A KR 940019880A KR 1019940003177 A KR1019940003177 A KR 1019940003177A KR 19940003177 A KR19940003177 A KR 19940003177A KR 940019880 A KR940019880 A KR 940019880A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
본 발명은, 광디바이스에 이용되는 화합물반도체형성법에 관한 것으로서, 고농도의 P형불순물을 II-VI족 반도체에 첨가하는 것을 목적으로한 것이며, 그 구성에 있어서, 펄스노즐(11)로부터의 여기 질소가스의 기판(9)에의 조사와 II-VI족 반도체구성원소의 타게트(7)에의 펄스레이저조사를 교호로 행하므로써, 질소가 첨가된 화합물을 형성하는 것을 특징으로 한 것이다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 실시예의 레이져애블레이션장치의 단면도,
제2도는 본 발명의 제2의 실시예의 반도체형성법을 표시한 도면.
Claims (9)
- 펄스레이저발진기와, 집광하는 렌즈와, 진공조와, 상기 진공조에 설치된 레이저입사창과, 상기 진공조내에 있고 레이저가 조사되는 타게트와, 타게트상에 있고 타게트로부터 레이저조사에 의해 분출한 물질을 퇴적시키는 기판과, 기판에 가스를 뿜어대기 위한 펄스동작의 노즐을 구비하고, 펄스레이저와 펄스노즐을 교호로 동작시키는 것을 특징으로 하는 레이저애블레이션장치.
- 제1항에 있어서, 펄스동작의 노즐은 플라즈마발생원이 부착되어 있고 여기가스를 뿜어댈수 있는 것을 특징으로 하는 레이저애블레이션장치.
- 제1항에 있어서, 타게트는 II-VI족 반도체구성원소로 이루어지는 것을 특징으로 하는 레이저애블레이션장치.
- 제1항에 있어서, 가스는 질소인 것을 특징으로 하는 레이저애블레이션장치.
- 청구범위 제1항 기재의 장치를 사용해서, 기판에 II-VI족 반도체 구성원소 타게트로부터의 물질을 1층 퇴적시키고, 일단 퇴적을 중지하여 여기한 질소가스를 뿜어대고, 퇴적과 가스내뿜기를 교효로 반복하는 것을 특징으로 하는 반도체형성법.
- 청구범위 제1항기재의 장치를 사용해서, 기판에 II족 원소타게트로부터의 물질을 1층 퇴적시키고, 일단 퇴적을 중지하여 여기한 질소가스를 뿜어대고, 다음에 VI족 원소타게트로부터의 물질을 1층퇴적시키고, 퇴적과 가스내뿜기를 교효로 반복하는 것을 특징으로 하는 반도체형성법.
- 제6항에 있어서, II족 원소는 Zn 또는 Cd로 이루어지는 것을 특징으로 하는 반도체형성법.
- 제6항에 있어서, VI족 원소는 S 또는 Se 또는 Te로 이루어지는 것을 특징으로 하는 반도체형성법.
- 청구범위 제1항 기재의 장치를 사용해서, 기판에 II족원소타게트로부터의 물질을 퇴적시키는 동시에 여기한 질소가스를 붐어대어, II족 원소를 1층퇴적시키고, 다음에 가스를 중지해서 VI족 원소타게트로부터의 물질을 1층퇴적시키는 일을 교호로 반복하는 것을 특징으로 하는 반도체형성법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP93-35102 | 1993-02-24 | ||
JP50A JPH06248439A (ja) | 1993-02-24 | 1993-02-24 | レーザーアブレーション装置およびそれを用いた半導体形成法 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR940019880A true KR940019880A (ko) | 1994-09-15 |
Family
ID=12432576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940003177A KR940019880A (ko) | 1993-02-24 | 1994-02-23 | 레이저 애블레이션장치 및 그것을 사용한 반도체장치 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH06248439A (ko) |
KR (1) | KR940019880A (ko) |
CN (1) | CN1094848A (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100193899B1 (ko) * | 1996-06-29 | 1999-06-15 | 김영환 | 반도체 소자의 감광막 형성장치 및 이를 이용한 감광막 형성방법 |
JP5074662B2 (ja) | 2005-02-14 | 2012-11-14 | 勝 堀 | 燃料電池用触媒層の製造方法及び製造装置 |
JP6132072B2 (ja) * | 2014-06-12 | 2017-05-24 | 富士電機株式会社 | 不純物添加装置、不純物添加方法及び半導体素子の製造方法 |
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1993
- 1993-02-24 JP JP50A patent/JPH06248439A/ja active Pending
-
1994
- 1994-02-23 KR KR1019940003177A patent/KR940019880A/ko not_active Application Discontinuation
- 1994-02-24 CN CN94102046A patent/CN1094848A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH06248439A (ja) | 1994-09-06 |
CN1094848A (zh) | 1994-11-09 |
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