CN1094848A - 激光蒸发装置及应用该装置的半导体形成法 - Google Patents

激光蒸发装置及应用该装置的半导体形成法 Download PDF

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CN1094848A
CN1094848A CN94102046A CN94102046A CN1094848A CN 1094848 A CN1094848 A CN 1094848A CN 94102046 A CN94102046 A CN 94102046A CN 94102046 A CN94102046 A CN 94102046A CN 1094848 A CN1094848 A CN 1094848A
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laser
deposit
target
vaporing
forming method
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吉田善一
伊东克通
水口信一
三露常男
大川和宏
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

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Abstract

本发明目的在于向Ⅱ-Ⅵ族半导体添加高浓度 的P型杂质。通过使脉冲喷嘴喷出的激发氮气向基 板的照射与对Ⅱ-Ⅵ族半导体构成元素靶的脉冲激 光照射交替地进行，形成添加氮的化合物。

Description

本发明涉及光设备中所利用的化合物半导体形成法。
以下说明现有的Ⅱ-Ⅵ族半导体形成法。现有的Ⅱ-Ⅵ族半导体形成法如K.Ohkawe和T.Mitsuyu在J.Appl.Phys.，Vol.70（1991）第439页中所揭示的那样，在采用分子束外延生长法（MBE）使ZnSe单晶薄膜成长的同时，向生长薄膜照射活性氮，形成p型载流子的N掺杂ZnSe薄膜。
但是按照这种方式，氮原子团供给与化合物成长是同时进行的，因而有氮原子团未被加进化合物薄膜的问题。
因此本发明的目的在于针对上述问题，提供一种可以使激光蒸镀法形成Ⅱ-Ⅵ族半导体与氮原子团供给交替进行的激光蒸发装置以及应用该装置的半导体形成法。
为了解决上述课题，本发明的激光蒸发装置以及半导体形成法包括：脉冲激光振荡器;聚光的透镜;真空槽;设置于上述真空槽上的激光入射窗;位于上述真空槽内、照射激光的靶;位于靶上方的基板，使因激光照射而由靶上喷出的物质淀积其上;用来向基板间歇吹气的脉冲式喷嘴，从而使脉冲激光与脉冲喷嘴交替动作。
使用这种结构，可以向Ⅱ-Ⅵ族半导体添加高浓度P型杂质。
图1是本发明实施例激光蒸发装置的剖面图。
图2是本发明第二实施例半导体形成法的示意图。
图3是本发明第三实施例半导体形成法的示意图。
以下根据附图说明本发明一实施例。
图1中，例如激态基态复合物激光器（エキシマレ-ザ-）1振荡发出的蒸发用激光2经透镜3聚光通过真空封闭用窗4入射到真空槽5内。真空槽5装有真空泵6。激光2照射到设置于真空槽5内的靶7上。而且，在真空槽5内与靶7相向设置了带加热机构的基座8，其上贴着基板9。真空槽5上装着带气体导入管10的脉冲喷嘴11，气体导入管10与脉冲喷嘴11之间是等离子体发生器12。
对于这种构造，若将例如波长248nm、脉冲宽度27ns、振荡频率10Hz的激光2聚焦到例如硒化锌靶7上的话，物质就被轰击出来变成硒与锌粒子13，飞向例如是砷化镓的基板9上，形成硒与锌的化合物薄膜。这里，从气体导入管10将氮气导入等离子体发生器12中，使之产生氮等离子体，作为激励分子束14由例如脉冲宽度80μs、重复频率10Hz的脉冲喷嘴11照射到基板9上。这时，由脉冲发生器15定时使激光器1与喷嘴12交替动作。这样，从靶7喷出的物质与激励的氮交替地飞到基板9上，氮被掺杂到化合物薄膜中。
以下说明第2实施例。
图2表示第二实施例，对于与第一实施例相同的装置构造，若将例如波长248nm、脉冲宽度27ns、振荡频率10Hz的激光2聚焦到例如硒化锌靶上的话，物质就被轰击出变成硒与锌粒子，飞到例如是砷化镓的基板21上，假如用反射高速电子衍射法（RHEED）观察，如图2（a）所示仅使锌22与硒23的化合物薄膜生长一层。这时停止生长，照射激励的氮24。重复此过程氮就被掺杂到化合物薄膜中。
以下说明第3实施例。
图3表示第3实施例，除有两种靶方面与第一实施例不同以外，其他均相同。对于这种构造的装置，将例如波长248nm、脉冲宽度27ns、振荡频率10Hz的激光2聚焦到例如锌靶的话，物质就被轰击出来成为锌粒子，飞到例如是砷化镓的基板31上，如图3（a）所示，锌32吸附于基板31上，这时停止激光照射，如图3（b）所示照射激励的氮33并使之吸附。接下来将激光会聚到硒靶上，形成硒粒子飞出，如图4（c）所示形成硒34与锌32的化合物。重复此过程，氮就被掺进化合物薄膜中。
按照本发明Ⅱ-Ⅵ族半导体形成法，通过使脉冲喷嘴喷出的激励的氮气向基板的照射与对Ⅱ-Ⅵ族半导体构成元素靶的脉冲激光照射交替进行，可以在基板上形成添加有高浓度P型杂质的Ⅱ-Ⅵ族半导体化合物。

Claims (9)

1、一种激光蒸发装置其特征在于包括：脉冲激光振荡器；聚光透镜；真空槽；设置于所述真空槽上的激光入射窗；位于所述真空槽内被激光照射的靶；位于靶上方、使之淀积因激光照射而由靶喷出的物质的基板；用来向基板吹送气体的脉冲式喷嘴，所述装置使脉冲激光器与脉冲喷嘴交替地动作。
2、如权利要求1所述的激光蒸发装置，其特征在于脉冲动作的喷嘴带有等离子体发生源可以吹送激励的气体。
3、如权利要求1所述的激光蒸发装置，其特征在于靶由Ⅱ-Ⅵ族半导体构成元素组成。
4、如权利要求1所述的激光蒸发装置，其特征在于气体为氮气。
5、一种应用如权利要求1所述的激光蒸发装置的半导体形成法，其特征在于在基板上淀积一层来自Ⅱ-Ⅵ族半导体构成元素靶的物质，一旦停止淀积便吹送激励的氮，而且反复交替地进行堆积与气体吹送。
6、一种应用如权利要求1所述的激光蒸发装置的半导体形成法，其特征在于在基板上淀积一层来自Ⅱ族元素靶的物质，一旦停止淀积便吹送激励的氮，再淀积一层来自Ⅵ族元素靶的物质，而且反复交替地进行淀积与气体吹送。
7、如权利要求6所述的半导体形成法，其特征在于Ⅱ族元素为Zn或Cd。
8、如权利要求7所述的半导体形成法，其特征在于Ⅵ族元素为S或Se或Te。
9、一种应用如权利要求1所述的激光蒸发装置的半导体形成法，其特征在于基板上淀积来自Ⅱ族元素靶的物质，同时吹送激励的氮气，以淀积一层Ⅱ族元素，再停止供气淀积一层来自Ⅵ族元素靶的物质，并且如此交替重复进行。
CN94102046A 1993-02-24 1994-02-24 激光蒸发装置及应用该装置的半导体形成法 Pending CN1094848A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1082244C (zh) * 1996-06-29 2002-04-03 现代电子产业株式会社 在半导体器件上形成光刻胶膜的装置及其形成方法
CN105793960A (zh) * 2014-06-12 2016-07-20 富士电机株式会社 杂质添加装置、杂质添加方法以及半导体元件的制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5074662B2 (ja) 2005-02-14 2012-11-14 勝 堀 燃料電池用触媒層の製造方法及び製造装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1082244C (zh) * 1996-06-29 2002-04-03 现代电子产业株式会社 在半导体器件上形成光刻胶膜的装置及其形成方法
CN105793960A (zh) * 2014-06-12 2016-07-20 富士电机株式会社 杂质添加装置、杂质添加方法以及半导体元件的制造方法
CN105793960B (zh) * 2014-06-12 2018-09-11 富士电机株式会社 杂质添加装置、杂质添加方法以及半导体元件的制造方法

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KR940019880A (ko) 1994-09-15

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