KR920003347A - 반도체 장치의 캐패시터용 유전체 - Google Patents

반도체 장치의 캐패시터용 유전체 Download PDF

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Publication number
KR920003347A
KR920003347A KR1019900009966A KR900009966A KR920003347A KR 920003347 A KR920003347 A KR 920003347A KR 1019900009966 A KR1019900009966 A KR 1019900009966A KR 900009966 A KR900009966 A KR 900009966A KR 920003347 A KR920003347 A KR 920003347A
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KR
South Korea
Prior art keywords
dielectrics
capacitors
semiconductor devices
dielectric
semiconductor device
Prior art date
Application number
KR1019900009966A
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English (en)
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KR930003790B1 (ko
Inventor
이상인
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900009966A priority Critical patent/KR930003790B1/ko
Priority to GB9020659A priority patent/GB2245760A/en
Priority to US07/637,314 priority patent/US5124777A/en
Priority to JP3169143A priority patent/JPH04272610A/ja
Publication of KR920003347A publication Critical patent/KR920003347A/ko
Application granted granted Critical
Publication of KR930003790B1 publication Critical patent/KR930003790B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

내용 없음

Description

반도체 장치의 캐패시터용 유전체
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 (SrO.25 BaO.75)-y Lay Nb 206에서의 La203첨가량에 따른 유전상수의 온도특성을 나타낸 도면.
제2도는 투과전자현미경으로 촬영한 (SrO.25 BaO.75)Nb206의 결정면을 나타낸 도면.
제3도와 제4도는 투과 전자현미경으로 촬영한 (SrO.25 BaO.75)0.94 Lao.04 Nb 206의 결정면을 나타낸 도면이다.

Claims (2)

  1. (Sr,Ba) Nb 206에 La203를 2몰%이상 첨가시켜 Sr과 Ba를 La로 치환시킴으로써 (Srx Bal-x)1-y Lay Nb 206(0.25≤x≤0.5, 0.04≤y)의 조성을 갖는 것을 특징으로하는 반도체 장치의 캐패시터용 유전체.
  2. 제1항에 있어서, 상기 유전체를 사용하여 제조된 박막의 캐패시터층을 구비한 것을 특징으로하는 반도체 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900009966A 1990-07-02 1990-07-02 반도체 장치의 캐패시터용 유전체 KR930003790B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019900009966A KR930003790B1 (ko) 1990-07-02 1990-07-02 반도체 장치의 캐패시터용 유전체
GB9020659A GB2245760A (en) 1990-07-02 1990-09-21 Dielectric medium for capacitor
US07/637,314 US5124777A (en) 1990-07-02 1991-01-03 Dielectric medium for capacitor of semiconductor device
JP3169143A JPH04272610A (ja) 1990-07-02 1991-06-14 半導体装置のキャパシタ用誘電体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900009966A KR930003790B1 (ko) 1990-07-02 1990-07-02 반도체 장치의 캐패시터용 유전체

Publications (2)

Publication Number Publication Date
KR920003347A true KR920003347A (ko) 1992-02-29
KR930003790B1 KR930003790B1 (ko) 1993-05-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900009966A KR930003790B1 (ko) 1990-07-02 1990-07-02 반도체 장치의 캐패시터용 유전체

Country Status (4)

Country Link
US (1) US5124777A (ko)
JP (1) JPH04272610A (ko)
KR (1) KR930003790B1 (ko)
GB (1) GB2245760A (ko)

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US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
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Also Published As

Publication number Publication date
US5124777A (en) 1992-06-23
GB2245760A (en) 1992-01-08
GB9020659D0 (en) 1990-10-31
KR930003790B1 (ko) 1993-05-10
JPH04272610A (ja) 1992-09-29

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