JPS6482487A - Thin film el element - Google Patents

Thin film el element

Info

Publication number
JPS6482487A
JPS6482487A JP62240175A JP24017587A JPS6482487A JP S6482487 A JPS6482487 A JP S6482487A JP 62240175 A JP62240175 A JP 62240175A JP 24017587 A JP24017587 A JP 24017587A JP S6482487 A JPS6482487 A JP S6482487A
Authority
JP
Japan
Prior art keywords
thin film
dielectric constant
crystal structure
voltage
perovskite crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62240175A
Other languages
Japanese (ja)
Inventor
Kenichi Tabata
Satoshi Tanda
Takashi Nire
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP62240175A priority Critical patent/JPS6482487A/en
Publication of JPS6482487A publication Critical patent/JPS6482487A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

PURPOSE:To allow the low-voltage drive by forming the first insulating layer with a film containing a perovskite crystal structure and having a high dielectric constant. CONSTITUTION:A thin film mainly made of CaTiO3 or SrTiO3 or KTaO3 and containing a perovskite crystal structure and having a high dielectric constant is used at least for the first insulating layer 3 of a thin film electroluminescence element provided with insulating layers 3 and 5 and a luminous layer 4 between a pair of electrodes 2 and 6. The dielectric constant is about 80-150 and very high, thus the voltage applied to the element is almost applied to the luminous layer 4. It can be thereby driven by the low voltage.
JP62240175A 1987-09-25 1987-09-25 Thin film el element Pending JPS6482487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62240175A JPS6482487A (en) 1987-09-25 1987-09-25 Thin film el element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240175A JPS6482487A (en) 1987-09-25 1987-09-25 Thin film el element

Publications (1)

Publication Number Publication Date
JPS6482487A true JPS6482487A (en) 1989-03-28

Family

ID=17055589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62240175A Pending JPS6482487A (en) 1987-09-25 1987-09-25 Thin film el element

Country Status (1)

Country Link
JP (1) JPS6482487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113054127A (en) * 2021-03-16 2021-06-29 河北工业大学 Low-voltage driven flexible light-emitting device and preparation method and application thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113054127A (en) * 2021-03-16 2021-06-29 河北工业大学 Low-voltage driven flexible light-emitting device and preparation method and application thereof
CN113054127B (en) * 2021-03-16 2024-01-23 河北工业大学 Low-voltage driven flexible light-emitting device and preparation method and application thereof

Similar Documents

Publication Publication Date Title
KR900004048A (en) Superconducting transistor
MY109375A (en) Superconducting field-effect transistors with inverted misfet structure and method for making the same.
KR900007281A (en) EL element
JPS6482487A (en) Thin film el element
KR880004341A (en) Thin film EL device and its manufacturing method
JPS53118390A (en) Thin film luminous element
JPS6443998A (en) Membranous el display element
JPS52147800A (en) Semiconductor ceramic capacitor composite and its method of manufacturing
KR890002908A (en) Superconducting Thin Film Manufacturing Method
KR920704545A (en) Thin film EL element
JPS6443995A (en) Membranous el panel
JPS6433885A (en) Thin film electroluminescence element
JPS6443993A (en) Membranous el panel
JPS5829880A (en) Electric field luminescent element
JPS5350689A (en) Electrolumiescence device
JPS6410678A (en) Superconducting circuit device
EP0305066A3 (en) Capacitors
JPS6464380A (en) Superconducting transistor
JPS56155285A (en) El display device
KR950012782A (en) Thin film electroluminescent device
JPS6435971A (en) Superconductor device
JPS54116891A (en) Thin-film luminous element of alternating current drive type
JPS6488432A (en) Transparent electrode substrate with superconducting thin film
JPS528797A (en) Liquid crystal indication unit
KR950021815A (en) Thin film EL device