KR950021815A - Thin film EL device - Google Patents

Thin film EL device Download PDF

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Publication number
KR950021815A
KR950021815A KR1019930027650A KR930027650A KR950021815A KR 950021815 A KR950021815 A KR 950021815A KR 1019930027650 A KR1019930027650 A KR 1019930027650A KR 930027650 A KR930027650 A KR 930027650A KR 950021815 A KR950021815 A KR 950021815A
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KR
South Korea
Prior art keywords
thin film
film electroluminescent
electroluminescent device
voltage
layer
Prior art date
Application number
KR1019930027650A
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Korean (ko)
Other versions
KR970006611B1 (en
Inventor
정재상
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이헌조
엘지전자 주식회사
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Priority to KR1019930027650A priority Critical patent/KR970006611B1/en
Publication of KR950021815A publication Critical patent/KR950021815A/en
Application granted granted Critical
Publication of KR970006611B1 publication Critical patent/KR970006611B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본 발명은 박막전계발광소자에 관한 것으로, 종래 박막전계발소재는 일반적으로 약 200V의 높은 구동전압으로 구동되고, 휘도-전압특성에서 문턱전압(VTH)과 구동전압 사이의 휘도곡선외 기울기(slope)가 완만하여 구동이 용이하지 않은 단점이 있었다. 본 발명은 이러한 단점을 해결하기 위하여 발광층과 제2절연막사이에 2000Å두께 이하의 강유전체 버퍼층을 성막시켜 종래에 비해 구동 전압을 감소시키는 것은 물론 휘도-전압 특성을 개선함으로써 소자의 구동을 용이하게 하도록 한 박막전계발광소자를 창안한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film electroluminescent device, and a conventional thin film electroluminescent material is generally driven at a high driving voltage of about 200 V, and has an out-of-luminance slope between the threshold voltage (V TH ) and the driving voltage in the luminance-voltage characteristic ( There is a disadvantage that driving is not easy because the slope is gentle. In order to solve the above disadvantages, the present invention provides a ferroelectric buffer layer having a thickness of 2000 m or less between the light emitting layer and the second insulating layer to reduce driving voltage and improve luminance-voltage characteristics. Invented a thin film electroluminescent device.

Description

박막전계발광소자Thin film EL device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명 박막전계발광소자의 단면구조도.5 is a cross-sectional view of a thin film electroluminescent device of the present invention.

Claims (5)

기판위에 투명전극, 제1절연층, 발광층, 강유전체 버퍼증, 제2절연층, 금속전극이 차례로 형성되어 구성된 것을 특징으로 하는 박막전계발광소자.A thin film electroluminescent device comprising a transparent electrode, a first insulating layer, a light emitting layer, a ferroelectric buffer, a second insulating layer, and a metal electrode formed on a substrate in this order. 제1항에 있어서, 제1절연층은 강유전체로 이루어진 것을 특징으로 하는 박막전계발광소자.The thin film electroluminescent device according to claim 1, wherein the first insulating layer is made of a ferroelectric material. 제1항에 있어서, 강유전체 버퍼층은 SrTiO3으로 이루어지는 것을 특징으로 하는 박막전계발광소자.The thin film electroluminescent device according to claim 1, wherein the ferroelectric buffer layer is made of SrTiO 3 . 제1항에 있어서, 강유전체 버퍼층은 2000Å 두께이하로 형성되는 것을 특징으로 하는 박막전계발광소자.The thin film electroluminescent device according to claim 1, wherein the ferroelectric buffer layer is formed to have a thickness of 2000 GPa or less. 제1항에 있어서, 제2절연층은 2층구조로 형성되는 것을 특징으로 하는 박막전계발광소자.The thin film electroluminescent device according to claim 1, wherein the second insulating layer has a two-layer structure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930027650A 1993-12-14 1993-12-14 Thin film avalanche photodiode KR970006611B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930027650A KR970006611B1 (en) 1993-12-14 1993-12-14 Thin film avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930027650A KR970006611B1 (en) 1993-12-14 1993-12-14 Thin film avalanche photodiode

Publications (2)

Publication Number Publication Date
KR950021815A true KR950021815A (en) 1995-07-26
KR970006611B1 KR970006611B1 (en) 1997-04-29

Family

ID=19370912

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930027650A KR970006611B1 (en) 1993-12-14 1993-12-14 Thin film avalanche photodiode

Country Status (1)

Country Link
KR (1) KR970006611B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100708829B1 (en) * 2005-03-17 2007-04-18 후지쯔 가부시끼가이샤 Mos image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100708829B1 (en) * 2005-03-17 2007-04-18 후지쯔 가부시끼가이샤 Mos image sensor

Also Published As

Publication number Publication date
KR970006611B1 (en) 1997-04-29

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