KR910700596A - Thin film EL device and manufacturing method - Google Patents

Thin film EL device and manufacturing method

Info

Publication number
KR910700596A
KR910700596A KR1019900701718A KR900701718A KR910700596A KR 910700596 A KR910700596 A KR 910700596A KR 1019900701718 A KR1019900701718 A KR 1019900701718A KR 900701718 A KR900701718 A KR 900701718A KR 910700596 A KR910700596 A KR 910700596A
Authority
KR
South Korea
Prior art keywords
thin film
manufacturing
film
metal oxide
insulating
Prior art date
Application number
KR1019900701718A
Other languages
Korean (ko)
Inventor
나오야 츠루마끼
Original Assignee
가타다 데츄야
가부시기가이샤 고마쯔 세이샤쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가타다 데츄야, 가부시기가이샤 고마쯔 세이샤쿠쇼 filed Critical 가타다 데츄야
Publication of KR910700596A publication Critical patent/KR910700596A/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음.No content.

Description

박막 EL소자와 그 제조방법Thin film EL device and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 구체예에 따른 전기적 절연성 금속 산화물막의 형성을 나타내는 설명도,2 is an explanatory diagram showing the formation of an electrically insulating metal oxide film according to an embodiment of the present invention;

제3도는 본 발명의 구체예에 따른 금속층의 선택적인 형성을 나타내는 설명도,3 is an explanatory diagram showing the selective formation of a metal layer according to an embodiment of the present invention;

4도는 본 발명의 구체예에 따른 금속확산을 나타내는 설명도,4 is an explanatory diagram showing a metal diffusion according to an embodiment of the present invention,

5도는 본 발명의 일구체예로서 박막 EL소자의 구조를 나타내는 개략 단면도.5 is a schematic cross-sectional view showing the structure of a thin film EL device as one embodiment of the present invention.

Claims (4)

이중절연구조를 갖고 매트릭스 구동시키는 박막 EL소자에 있어서, 전기적 절연성인 투과성 기판상의 투명전극을 투명하게 평탄한 전기적 절연막내에 형성한 것을 특징으로 하는 박막 EL소자.A thin film EL device having a double insulating structure and driven in a matrix, wherein the transparent electrode on the electrically insulating transparent substrate is formed in a transparent flat electrical insulating film. 이중절연구를 갖고 매트릭스 구동시키는 박막 EL소자의 제조방법에 있어서, 전기적 절연성이 투광성 기판에 전기적 절연성 금속산화물막을 형성하는 스텝과, 이 막의 면에 선택적으로 금속층을 형성하는 스텝과,이들 금속층을 상기 절연성 금속산화물막내에 확산시켜서 투명전극을 형성하는 스텝으로 이루어짐을 특징으로하는 박막 EL소자의 제조방법.A method of manufacturing a thin film EL element having a double insulator and driving a matrix, comprising the steps of: forming an electrically insulating metal oxide film on a light transmissive substrate, and selectively forming a metal layer on the surface of the film; A method of manufacturing a thin film EL device, comprising the step of diffusing into a metal oxide film to form a transparent electrode. 제2항에 있어서, 상기 절연성 금속산화물막이 ZnO인 것을 특징으로 하는 박막 EL소자의 제조방법.The method of manufacturing a thin film EL device according to claim 2, wherein the insulating metal oxide film is ZnO. 제2항에 있어서, 금속층이 A1인 것을 특징으로 하는 박막 EL소자의 제조방법.The method of manufacturing a thin film EL device according to claim 2, wherein the metal layer is A1. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900701718A 1988-12-16 1989-12-15 Thin film EL device and manufacturing method KR910700596A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63316300A JP2764591B2 (en) 1988-12-16 1988-12-16 Thin film EL device and method of manufacturing the same
JP63-316300 1988-12-16
PCT/JP1989/001266 WO1990007254A1 (en) 1988-12-16 1989-12-15 Thin-film electroluminescent element and method of manufacturing the same

Publications (1)

Publication Number Publication Date
KR910700596A true KR910700596A (en) 1991-03-15

Family

ID=18075587

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900701718A KR910700596A (en) 1988-12-16 1989-12-15 Thin film EL device and manufacturing method

Country Status (4)

Country Link
EP (1) EP0450077A4 (en)
JP (1) JP2764591B2 (en)
KR (1) KR910700596A (en)
WO (1) WO1990007254A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0891686B1 (en) * 1996-04-03 1999-10-06 Ecole Polytechnique Féderale de Lausanne (EPFL) Electroluminescent device
US20060244368A1 (en) * 2003-07-07 2006-11-02 Kenichi Nagayama Organic electroluminescent display panel and method for manufacturing same
KR100857472B1 (en) * 2007-05-29 2008-09-08 한국전자통신연구원 Organic light emitting device and method for fabricating the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL38468A (en) * 1971-02-02 1974-11-29 Hughes Aircraft Co Electrical resistance device and its production
DE3138960A1 (en) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING ELECTRICALLY CONDUCTING LAYERS
JPS58102975A (en) * 1981-12-16 1983-06-18 富士通株式会社 Manufacture of display panel electrode substrate
JPS61131396A (en) * 1984-11-29 1986-06-19 ホ−ヤ株式会社 Manufacture of electrode substrate
JPS61151996A (en) * 1984-12-26 1986-07-10 株式会社日立製作所 Thin film electroluminescence element and manufacture thereof
JPS61146894U (en) * 1985-03-04 1986-09-10
JPS6353892A (en) * 1986-08-22 1988-03-08 クラリオン株式会社 Electric field light emission device

Also Published As

Publication number Publication date
WO1990007254A1 (en) 1990-06-28
JPH02162684A (en) 1990-06-22
EP0450077A1 (en) 1991-10-09
EP0450077A4 (en) 1992-01-15
JP2764591B2 (en) 1998-06-11

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