KR920000131A - 반도체 집적 회로 - Google Patents

반도체 집적 회로 Download PDF

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Publication number
KR920000131A
KR920000131A KR1019910002742A KR910002742A KR920000131A KR 920000131 A KR920000131 A KR 920000131A KR 1019910002742 A KR1019910002742 A KR 1019910002742A KR 910002742 A KR910002742 A KR 910002742A KR 920000131 A KR920000131 A KR 920000131A
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KR
South Korea
Prior art keywords
integrated circuit
semiconductor integrated
field effect
effect transistor
current
Prior art date
Application number
KR1019910002742A
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English (en)
Other versions
KR930006728B1 (ko
Inventor
고이찌 엔도
Original Assignee
아오이 죠이찌
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 아오이 죠이찌, 가부시끼가이샤 도시바 filed Critical 아오이 죠이찌
Publication of KR920000131A publication Critical patent/KR920000131A/ko
Application granted granted Critical
Publication of KR930006728B1 publication Critical patent/KR930006728B1/ko

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/569—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection
    • G05F1/573—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for protection with overcurrent detector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

내용 없음.

Description

반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 집적 회로(정전압 전원IC)의 실시예의 블럭 회로도.
제2도는 접합형 전계 효과 트랜지스터 VDS-ID특성도.
제3도, 제4도 및 5도는 본 발명의 그 밖의 실시예이며, 각각 정전압 전원 IC, 스위칭 IC 및 다출력 정전압 전원 IC 블럭 회로도.
제4도는 JFET의 단면도.
제7도 내지 9도는 종래의 반도체 집적 회로의 블럭 회로도.
* 도면의 주요부분에 대한 부호의 설명
2,14,22,32,40,51 : 직류 입력단자 3,15,23,34,41,48,49 : 출력단자
4,16,24,33,42,50 : 입출력 공동단자
21,31,39,46,47 : 접합형 전계 효과 트랜지스터
8,28,38,58 : 기준 전압원 7,12,27,37,54,57,59 : 오차 증폭기
5,6,25,26,35,36,52,53,55,56 : 분압 저항
I : 출력전류

Claims (1)

  1. 직류 전력을 입력하는 직류 입력단자쌍(22 및 24,33 및 32,40 및 42,50 및 51), 전력을 부하에 공급하는 출력단자쌍(23 및 24,33 및 34,41 및 42,48 및 50), 및 1개의 주전극이 상기 직류 입력단자에 전기적으로 접속되고, 다른 1개의 주전극이 상기 출력단자에 전기적으로 접속되는 접합형 전계 효과 트랜지스터(21,31,39,46,47)을 갖고 있고, 상기 접합형 전계 효과 트랜지스터의 드레인 최대 포화 전류(IDSS)를 초과하는 과대한 출력 전류를 상기 트랜지스터에 의해 억제함과 동시에 출력 전류를 제어함으로써 정전압 특성 및 전류 스위치 기능을 얻는 것을 특징으로 하는 반도체 집적 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002742A 1990-02-21 1991-02-20 반도체 집적회로 KR930006728B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2040352A JP2531818B2 (ja) 1990-02-21 1990-02-21 半導体集積回路
JP2-40352 1990-02-21

Publications (2)

Publication Number Publication Date
KR920000131A true KR920000131A (ko) 1992-01-10
KR930006728B1 KR930006728B1 (ko) 1993-07-23

Family

ID=12578241

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002742A KR930006728B1 (ko) 1990-02-21 1991-02-20 반도체 집적회로

Country Status (3)

Country Link
US (1) US5168175A (ko)
JP (1) JP2531818B2 (ko)
KR (1) KR930006728B1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07121252A (ja) * 1993-10-26 1995-05-12 Rohm Co Ltd 安定化電源回路内蔵ｉｃ
KR100594044B1 (ko) * 1998-12-30 2006-09-06 삼성전자주식회사 시스템의 전원 안정화 회로
US6756839B2 (en) * 2000-05-30 2004-06-29 Semiconductor Components Industries, L.L.C. Low voltage amplifying circuit
DE10101744C1 (de) * 2001-01-16 2002-08-08 Siemens Ag Elektronische Schalteinrichtung und Betriebsverfahren
DE10212863B4 (de) * 2002-03-22 2006-06-08 Siemens Ag Ansteuerschaltung für einen Sperrschicht-Feldeffekttransistor
US20030231050A1 (en) * 2002-06-14 2003-12-18 Semiconductor Components Industries, Llc Method of forming a reference voltage from a J-fet
US6989659B2 (en) * 2002-09-09 2006-01-24 Acutechnology Semiconductor Low dropout voltage regulator using a depletion pass transistor
TW200509496A (en) * 2003-08-21 2005-03-01 Fultec Pty Ltd Proprietary Integrated electronic disconnecting circuits, methods, and systems
US20060098363A1 (en) * 2004-11-09 2006-05-11 Fultec Semiconductors, Inc. Integrated transient blocking unit compatible with very high voltages
US8278691B2 (en) * 2008-12-11 2012-10-02 Micron Technology, Inc. Low power memory device with JFET device structures
US8294440B2 (en) * 2009-06-27 2012-10-23 Lowe Jr Brian Albert Voltage regulator using depletion mode pass driver and boot-strapped, input isolated floating reference
US8593211B2 (en) * 2012-03-16 2013-11-26 Texas Instruments Incorporated System and apparatus for driver circuit for protection of gates of GaN FETs
US9793707B2 (en) * 2013-05-28 2017-10-17 Texas Instruments Incorporated Fast transient precision power regulation apparatus
FR3016751B1 (fr) * 2014-01-21 2017-10-06 Mersen France Sb Sas Dispositif de protection d'un circuit contre des surtensions et organe d'alimentation electrique comprenant un tel dispositif
CN113629813A (zh) * 2021-08-13 2021-11-09 瀚昕微电子(无锡)有限公司 一种充电设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3633044A (en) * 1969-12-31 1972-01-04 Singer General Precision Gamma correction circuit
JPS55131823A (en) * 1979-03-31 1980-10-14 Fujitsu Ltd Voltage-regulated power supply
JPS62272631A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd 歪発生回路
JP2751202B2 (ja) * 1988-04-19 1998-05-18 ソニー株式会社 電流供給装置
US4937469A (en) * 1988-08-30 1990-06-26 International Business Machines Corporation Switched current mode driver in CMOS with short circuit protection

Also Published As

Publication number Publication date
JPH03242942A (ja) 1991-10-29
JP2531818B2 (ja) 1996-09-04
KR930006728B1 (ko) 1993-07-23
US5168175A (en) 1992-12-01

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