KR910001718B1 - 반도체집적회로장치 - Google Patents

반도체집적회로장치 Download PDF

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Publication number
KR910001718B1
KR910001718B1 KR1019870009387A KR870009387A KR910001718B1 KR 910001718 B1 KR910001718 B1 KR 910001718B1 KR 1019870009387 A KR1019870009387 A KR 1019870009387A KR 870009387 A KR870009387 A KR 870009387A KR 910001718 B1 KR910001718 B1 KR 910001718B1
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KR
South Korea
Prior art keywords
sbd
collector
transistor
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870009387A
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English (en)
Korean (ko)
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KR880008453A (ko
Inventor
쓰네히로 고야마
이찌로오 다끼요우
요시히꼬 히라다
Original Assignee
미쓰비시 뎅끼 가부시끼이샤
시기모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시 뎅끼 가부시끼이샤, 시기모리야 filed Critical 미쓰비시 뎅끼 가부시끼이샤
Publication of KR880008453A publication Critical patent/KR880008453A/ko
Application granted granted Critical
Publication of KR910001718B1 publication Critical patent/KR910001718B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/221—Schottky barrier BJTs

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  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
KR1019870009387A 1986-12-08 1987-08-27 반도체집적회로장치 Expired KR910001718B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61292729A JPS63143867A (ja) 1986-12-08 1986-12-08 半導体集積回路装置
JP61-292729 1986-12-08

Publications (2)

Publication Number Publication Date
KR880008453A KR880008453A (ko) 1988-08-31
KR910001718B1 true KR910001718B1 (ko) 1991-03-19

Family

ID=17785563

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009387A Expired KR910001718B1 (ko) 1986-12-08 1987-08-27 반도체집적회로장치

Country Status (3)

Country Link
JP (1) JPS63143867A (enrdf_load_stackoverflow)
KR (1) KR910001718B1 (enrdf_load_stackoverflow)
DE (1) DE3741567A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110752256A (zh) * 2019-10-22 2020-02-04 深圳第三代半导体研究院 一种碳化硅肖特基钳位晶体管及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154967A (en) * 1978-05-29 1979-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electronic device
JPS59139681A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd シヨツトキバリアダイオ−ド

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110752256A (zh) * 2019-10-22 2020-02-04 深圳第三代半导体研究院 一种碳化硅肖特基钳位晶体管及其制备方法
CN110752256B (zh) * 2019-10-22 2021-04-06 深圳第三代半导体研究院 一种碳化硅肖特基钳位晶体管及其制备方法

Also Published As

Publication number Publication date
JPS63143867A (ja) 1988-06-16
KR880008453A (ko) 1988-08-31
DE3741567A1 (de) 1988-06-09
DE3741567C2 (enrdf_load_stackoverflow) 1992-11-19

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