JPS63143867A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS63143867A
JPS63143867A JP61292729A JP29272986A JPS63143867A JP S63143867 A JPS63143867 A JP S63143867A JP 61292729 A JP61292729 A JP 61292729A JP 29272986 A JP29272986 A JP 29272986A JP S63143867 A JPS63143867 A JP S63143867A
Authority
JP
Japan
Prior art keywords
transistor
sbd
leakage current
collector
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61292729A
Other languages
English (en)
Japanese (ja)
Inventor
Tsunehiro Koyama
恒弘 小山
Yoichiro Taki
滝　洋一郎
Yoshihiko Hirata
善彦 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61292729A priority Critical patent/JPS63143867A/ja
Priority to KR1019870009387A priority patent/KR910001718B1/ko
Priority to DE19873741567 priority patent/DE3741567A1/de
Publication of JPS63143867A publication Critical patent/JPS63143867A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/221—Schottky barrier BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP61292729A 1986-12-08 1986-12-08 半導体集積回路装置 Pending JPS63143867A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61292729A JPS63143867A (ja) 1986-12-08 1986-12-08 半導体集積回路装置
KR1019870009387A KR910001718B1 (ko) 1986-12-08 1987-08-27 반도체집적회로장치
DE19873741567 DE3741567A1 (de) 1986-12-08 1987-12-08 Mit schottky-sperrschichtdiode geklemmter transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61292729A JPS63143867A (ja) 1986-12-08 1986-12-08 半導体集積回路装置

Publications (1)

Publication Number Publication Date
JPS63143867A true JPS63143867A (ja) 1988-06-16

Family

ID=17785563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61292729A Pending JPS63143867A (ja) 1986-12-08 1986-12-08 半導体集積回路装置

Country Status (3)

Country Link
JP (1) JPS63143867A (enrdf_load_stackoverflow)
KR (1) KR910001718B1 (enrdf_load_stackoverflow)
DE (1) DE3741567A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110752256B (zh) * 2019-10-22 2021-04-06 深圳第三代半导体研究院 一种碳化硅肖特基钳位晶体管及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154967A (en) * 1978-05-29 1979-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electronic device
JPS59139681A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd シヨツトキバリアダイオ−ド

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54154967A (en) * 1978-05-29 1979-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electronic device
JPS59139681A (ja) * 1983-01-31 1984-08-10 Hitachi Ltd シヨツトキバリアダイオ−ド

Also Published As

Publication number Publication date
DE3741567A1 (de) 1988-06-09
DE3741567C2 (enrdf_load_stackoverflow) 1992-11-19
KR910001718B1 (ko) 1991-03-19
KR880008453A (ko) 1988-08-31

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