KR910000114B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR910000114B1
KR910000114B1 KR1019860009327A KR860009327A KR910000114B1 KR 910000114 B1 KR910000114 B1 KR 910000114B1 KR 1019860009327 A KR1019860009327 A KR 1019860009327A KR 860009327 A KR860009327 A KR 860009327A KR 910000114 B1 KR910000114 B1 KR 910000114B1
Authority
KR
South Korea
Prior art keywords
signal
bonding pad
mos transistor
channel mos
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860009327A
Other languages
English (en)
Korean (ko)
Other versions
KR870010628A (ko
Inventor
히데유끼 오자끼
가즈도시 히라야마
가즈야스 후지시마
히데또 히다까
Original Assignee
미쓰비시 뎅기 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅기 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅기 가부시끼가이샤
Publication of KR870010628A publication Critical patent/KR870010628A/ko
Application granted granted Critical
Publication of KR910000114B1 publication Critical patent/KR910000114B1/ko
Expired legal-status Critical Current

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Classifications

    • H10W76/17—
    • H10W72/90—
    • H10W44/20—
    • H10W44/601—
    • H10W72/071—
    • H10W72/5449—
    • H10W72/932—
    • H10W90/754—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR1019860009327A 1986-04-07 1986-11-05 반도체 장치 Expired KR910000114B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61088716A JP2605687B2 (ja) 1986-04-17 1986-04-17 半導体装置
JP61-88716 1986-04-17
JP88716 1986-04-17

Publications (2)

Publication Number Publication Date
KR870010628A KR870010628A (ko) 1987-11-30
KR910000114B1 true KR910000114B1 (ko) 1991-01-21

Family

ID=13950623

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009327A Expired KR910000114B1 (ko) 1986-04-07 1986-11-05 반도체 장치

Country Status (4)

Country Link
US (1) US4808844A (cg-RX-API-DMAC10.html)
JP (1) JP2605687B2 (cg-RX-API-DMAC10.html)
KR (1) KR910000114B1 (cg-RX-API-DMAC10.html)
DE (1) DE3712178A1 (cg-RX-API-DMAC10.html)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900001398B1 (ko) * 1987-11-30 1990-03-09 삼성전자 주식회사 양방성 입출력 셀
KR910003593B1 (ko) * 1987-12-30 1991-06-07 삼성전자 주식회사 고집적도 메모리용 모드 선택회로
JPH01280923A (ja) * 1988-05-07 1989-11-13 Mitsubishi Electric Corp 半導体集積回路装置
US4987325A (en) * 1988-07-13 1991-01-22 Samsung Electronics Co., Ltd. Mode selecting circuit for semiconductor memory device
US4866309A (en) * 1988-07-18 1989-09-12 Western Digital Corporation Multiplexed bus architecture for configuration sensing
US6304987B1 (en) 1995-06-07 2001-10-16 Texas Instruments Incorporated Integrated test circuit
US4987319A (en) * 1988-09-08 1991-01-22 Kawasaki Steel Corporation Programmable input/output circuit and programmable logic device
JP2560805B2 (ja) * 1988-10-06 1996-12-04 三菱電機株式会社 半導体装置
US5161124A (en) * 1988-10-27 1992-11-03 Texas Instruments Incorporated Bond programmable integrated circuit
US4912348A (en) * 1988-12-09 1990-03-27 Idaho Research Foundation Method for designing pass transistor asynchronous sequential circuits
JP3005250B2 (ja) * 1989-06-30 2000-01-31 テキサス インスツルメンツ インコーポレイテツド バスモニター集積回路
JP2531827B2 (ja) * 1990-04-25 1996-09-04 株式会社東芝 半導体装置及びその製造方法
JP2925337B2 (ja) * 1990-12-27 1999-07-28 株式会社東芝 半導体装置
US5353250A (en) * 1991-12-09 1994-10-04 Texas Instruments Inc. Pin programmable dram that provides customer option programmability
JP2727921B2 (ja) * 1993-08-13 1998-03-18 日本電気株式会社 半導体集積回路装置
US5557219A (en) * 1994-01-31 1996-09-17 Texas Instruments Incorporated Interface level programmability
US5760643A (en) * 1995-10-31 1998-06-02 Texas Instruments Incorporated Integrated circuit die with selective pad-to-pad bypass of internal circuitry
US5969538A (en) 1996-10-31 1999-10-19 Texas Instruments Incorporated Semiconductor wafer with interconnect between dies for testing and a process of testing
DE19638175C2 (de) 1996-09-18 2000-05-25 Siemens Ag Integrierte Schaltung (Chip) mit einem diese in sich aufnehmenden Gehäuse und externer Konfigurationsmöglichkeit
US6408413B1 (en) 1998-02-18 2002-06-18 Texas Instruments Incorporated Hierarchical access of test access ports in embedded core integrated circuits
US6405335B1 (en) 1998-02-25 2002-06-11 Texas Instruments Incorporated Position independent testing of circuits
US7058862B2 (en) * 2000-05-26 2006-06-06 Texas Instruments Incorporated Selecting different 1149.1 TAP domains from update-IR state
JP3334671B2 (ja) * 1999-04-16 2002-10-15 日本電気株式会社 半導体装置及びこれを搭載したモジュール
US6731071B2 (en) * 1999-06-21 2004-05-04 Access Business Group International Llc Inductively powered lamp assembly
US6728915B2 (en) 2000-01-10 2004-04-27 Texas Instruments Incorporated IC with shared scan cells selectively connected in scan path
US6769080B2 (en) 2000-03-09 2004-07-27 Texas Instruments Incorporated Scan circuit low power adapter with counter
JP4313544B2 (ja) * 2002-05-15 2009-08-12 富士通マイクロエレクトロニクス株式会社 半導体集積回路
US7131033B1 (en) 2002-06-21 2006-10-31 Cypress Semiconductor Corp. Substrate configurable JTAG ID scheme
US7818640B1 (en) 2004-10-22 2010-10-19 Cypress Semiconductor Corporation Test system having a master/slave JTAG controller
US20060086940A1 (en) * 2004-10-26 2006-04-27 Jim Wang Package structure of multi-chips light-emitting module

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56157056A (en) * 1980-05-09 1981-12-04 Fujitsu Ltd Manufacture of read-only memory
US4386284A (en) * 1981-02-06 1983-05-31 Rca Corporation Pulse generating circuit using current source
DE3120163A1 (de) * 1981-05-21 1982-12-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Cmos-auswahlschaltung
JPS5835963A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 集積回路装置
DE3218992A1 (de) * 1982-05-19 1983-11-24 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierter schaltkreis
JPS6188538A (ja) * 1984-10-05 1986-05-06 Fujitsu Ltd 半導体装置
US4638181A (en) * 1984-11-29 1987-01-20 Rca Corporation Signal source selector
JPS6251231A (ja) * 1985-08-30 1987-03-05 Fujitsu Ltd 半導体集積回路装置
JPH0831789B2 (ja) * 1985-09-04 1996-03-27 沖電気工業株式会社 出力回路

Also Published As

Publication number Publication date
DE3712178C2 (cg-RX-API-DMAC10.html) 1992-08-27
JPS62244144A (ja) 1987-10-24
KR870010628A (ko) 1987-11-30
JP2605687B2 (ja) 1997-04-30
DE3712178A1 (de) 1987-10-22
US4808844A (en) 1989-02-28

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