KR900019221A - 온도검출수단을 갖는 반도체 집적회로 장치 - Google Patents

온도검출수단을 갖는 반도체 집적회로 장치 Download PDF

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Publication number
KR900019221A
KR900019221A KR1019890007198A KR890007198A KR900019221A KR 900019221 A KR900019221 A KR 900019221A KR 1019890007198 A KR1019890007198 A KR 1019890007198A KR 890007198 A KR890007198 A KR 890007198A KR 900019221 A KR900019221 A KR 900019221A
Authority
KR
South Korea
Prior art keywords
circuit
voltage
transistor
temperature
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019890007198A
Other languages
English (en)
Korean (ko)
Other versions
KR920008421B1 (cg-RX-API-DMAC7.html
Inventor
마사유끼 고가도
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR900019221A publication Critical patent/KR900019221A/ko
Application granted granted Critical
Publication of KR920008421B1 publication Critical patent/KR920008421B1/ko
Granted legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
    • H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
    • H02H5/044—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a semiconductor device to sense the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Bipolar Integrated Circuits (AREA)
KR1019890007198A 1988-05-31 1989-05-30 온도검출수단을 갖는 반도체 집적회로 장치 Granted KR900019221A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-133659 1988-05-31
JP63133659A JPH01302849A (ja) 1988-05-31 1988-05-31 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR900019221A true KR900019221A (ko) 1990-12-24
KR920008421B1 KR920008421B1 (cg-RX-API-DMAC7.html) 1992-09-28

Family

ID=15109938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007198A Granted KR900019221A (ko) 1988-05-31 1989-05-30 온도검출수단을 갖는 반도체 집적회로 장치

Country Status (3)

Country Link
EP (1) EP0344715A3 (cg-RX-API-DMAC7.html)
JP (1) JPH01302849A (cg-RX-API-DMAC7.html)
KR (1) KR900019221A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100736403B1 (ko) * 2005-08-19 2007-07-09 삼성전자주식회사 온도 검출기, 온도 검출방법, 및 상기 온도 검출기를구비하는 반도체 장치

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461252A (en) * 1992-10-06 1995-10-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device comprising an over-temperature detection element for detecting excessive temperature of amplifiers
JP3869815B2 (ja) 2003-03-31 2007-01-17 Ｎｅｃエレクトロニクス株式会社 半導体集積回路装置
JP3810411B2 (ja) 2004-01-23 2006-08-16 Ｎｅｃエレクトロニクス株式会社 集積回路装置
JP4541717B2 (ja) 2004-02-09 2010-09-08 ルネサスエレクトロニクス株式会社 集積回路装置及びその製造方法
JP4620962B2 (ja) 2004-03-30 2011-01-26 ルネサスエレクトロニクス株式会社 集積回路装置の製造方法及び酸化バナジウム膜の形成方法
JP4536408B2 (ja) 2004-03-30 2010-09-01 ルネサスエレクトロニクス株式会社 集積回路装置
JP4541742B2 (ja) 2004-03-30 2010-09-08 ルネサスエレクトロニクス株式会社 集積回路装置
JP4535367B2 (ja) 2004-05-24 2010-09-01 ルネサスエレクトロニクス株式会社 集積回路装置
CN100389308C (zh) * 2004-05-26 2008-05-21 鸿富锦精密工业（深圳）有限公司 芯片温测装置及其温测方法
JP4524688B2 (ja) * 2007-01-23 2010-08-18 エルピーダメモリ株式会社 基準電圧発生回路及び半導体集積回路装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916263A (en) * 1971-12-13 1975-10-28 Honeywell Inf Systems Memory driver circuit with thermal protection
DE3415764A1 (de) * 1984-04-27 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur temperaturueberwachung integrierter schaltungen
US4667265A (en) * 1985-12-20 1987-05-19 National Semiconductor Corporation Adaptive thermal shutdown circuit
JPS6315528A (ja) * 1986-07-08 1988-01-22 Nec Corp 半導体装置
JPS63124618A (ja) * 1986-11-14 1988-05-28 Nec Corp 論理ゲ−ト駆動制御回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100736403B1 (ko) * 2005-08-19 2007-07-09 삼성전자주식회사 온도 검출기, 온도 검출방법, 및 상기 온도 검출기를구비하는 반도체 장치

Also Published As

Publication number Publication date
EP0344715A3 (en) 1991-03-27
EP0344715A2 (en) 1989-12-06
KR920008421B1 (cg-RX-API-DMAC7.html) 1992-09-28
JPH01302849A (ja) 1989-12-06

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Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19890530

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19890530

Comment text: Request for Examination of Application

PG1501 Laying open of application
PC1902 Submission of document of abandonment before decision of registration
SUBM Surrender of laid-open application requested