KR900017178A - 게이트어레이 반도체 집적회로장치 - Google Patents

게이트어레이 반도체 집적회로장치 Download PDF

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Publication number
KR900017178A
KR900017178A KR1019900005898A KR900005898A KR900017178A KR 900017178 A KR900017178 A KR 900017178A KR 1019900005898 A KR1019900005898 A KR 1019900005898A KR 900005898 A KR900005898 A KR 900005898A KR 900017178 A KR900017178 A KR 900017178A
Authority
KR
South Korea
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
gate array
array semiconductor
Prior art date
Application number
KR1019900005898A
Other languages
English (en)
Other versions
KR930003455B1 (ko
Inventor
히로유키 하라
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900017178A publication Critical patent/KR900017178A/ko
Application granted granted Critical
Publication of KR930003455B1 publication Critical patent/KR930003455B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.

Description

게이트어레이 반도체집적회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 1실시예를 나타냄 개략도.
제 2 도는 본 발명의 구체적인 실시예에서 의사 ECL레벨의 입출력을 구성하는 경우의 회로도.
* 도면의 주요부분에 대한 부호의 설명
11 : 내부논리게이트 12 : 입출력 셀
13 : 입력회로 14 : 출력회로
15 : 바이어스회로 16 : 의사 ECL입력회로(疑似 ECL입력入力回路)
17 : 의사 ECL출력회로 18 : 의사 ECL입출력용 바이어스회로

Claims (1)

  1. 입출력 셀(12)이 설치되는 게이트어레이 반도체집적회로장치에 있어서, 입출력회로(13,14)에 필요한 바이어스회로(15)를 입출력 셀(12)의 마스터-슬라이스에 의해 구성한 것을 특징으로 하는 게이트어레이 반도체집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019900005898A 1989-04-26 1990-04-26 게이트어레이 반도체집적회로장치 KR930003455B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-106530 1989-04-26
JP1106530A JP2509696B2 (ja) 1989-04-26 1989-04-26 ゲ―トアレ―半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR900017178A true KR900017178A (ko) 1990-11-15
KR930003455B1 KR930003455B1 (ko) 1993-04-29

Family

ID=14435947

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005898A KR930003455B1 (ko) 1989-04-26 1990-04-26 게이트어레이 반도체집적회로장치

Country Status (5)

Country Link
US (1) US5039884A (ko)
EP (1) EP0395070B1 (ko)
JP (1) JP2509696B2 (ko)
KR (1) KR930003455B1 (ko)
DE (1) DE69015681T2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122686A (en) * 1991-07-18 1992-06-16 Advanced Micro Devices, Inc. Power reduction design for ECL outputs that is independent of random termination voltage
US5341018A (en) * 1991-09-18 1994-08-23 Nec Corporation Semiconductor integrated circuit device having a plurality of input circuits each including differently sized transistors
US5581279A (en) * 1991-12-23 1996-12-03 Cirrus Logic, Inc. VGA controller circuitry

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3382726D1 (de) * 1982-06-30 1994-01-27 Fujitsu Ltd Integrierte Halbleiterschaltungsanordnung.
JPH0683049B2 (ja) * 1983-08-31 1994-10-19 株式会社日立製作所 半導体集積回路装置
JPS6074455A (ja) * 1983-09-29 1985-04-26 Fujitsu Ltd マスタスライス集積回路
US4623802A (en) * 1984-05-17 1986-11-18 Fairchild Semiconductor Corporation Multiple-stage gate network having independent reference voltage sources
US4631427A (en) * 1984-11-19 1986-12-23 Advanced Micro Devices, Inc. ECL gate circuit having internally generated reference voltages
JPS61188960A (ja) * 1985-02-18 1986-08-22 Fujitsu Ltd 半導体集積回路装置
US4751406A (en) * 1985-05-03 1988-06-14 Advanced Micro Devices, Inc. ECL circuit with output transistor auxiliary biasing circuit
US4933576A (en) * 1988-05-13 1990-06-12 Fujitsu Limited Gate array device having macro cells for forming master and slave cells of master-slave flip-flop circuit
JPH01289138A (ja) * 1988-05-16 1989-11-21 Toshiba Corp マスタースライス型半導体集積回路

Also Published As

Publication number Publication date
EP0395070B1 (en) 1995-01-04
KR930003455B1 (ko) 1993-04-29
EP0395070A3 (en) 1991-06-05
JPH02285657A (ja) 1990-11-22
DE69015681T2 (de) 1995-06-14
EP0395070A2 (en) 1990-10-31
JP2509696B2 (ja) 1996-06-26
DE69015681D1 (de) 1995-02-16
US5039884A (en) 1991-08-13

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