KR900010924A - 반도체 층 성장으로 부터 결함을 제거하기 위한 버퍼구조를 갖는 반도체 장치 - Google Patents
반도체 층 성장으로 부터 결함을 제거하기 위한 버퍼구조를 갖는 반도체 장치 Download PDFInfo
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- KR900010924A KR900010924A KR1019890019297A KR890019297A KR900010924A KR 900010924 A KR900010924 A KR 900010924A KR 1019890019297 A KR1019890019297 A KR 1019890019297A KR 890019297 A KR890019297 A KR 890019297A KR 900010924 A KR900010924 A KR 900010924A
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- material layer
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- 239000004065 semiconductor Substances 0.000 title claims 22
- 230000007547 defect Effects 0.000 title claims 2
- 239000000463 material Substances 0.000 claims 14
- 150000001875 compounds Chemical class 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Power Engineering (AREA)
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예에 따른 버퍼구조를 도시한 도, 제3도는 제2도의 버퍼구조의 구성 단면도, 제4도는 두번째 실시예에 따른 버퍼구조의 구성 단면도, 제5도는 본 발명에서 제2도의 버퍼구조를 성장시키기 위해 사용된 장치의 도식적인 구성을 도시한 도.
Claims (11)
- Ⅲ-V족 화합물 반도체 물질의 첫번째 물질층(13), 첫번째 물질층 위에 제공된 Ⅲ-V족 화합물 반도체 물질의 두번째 물질층(14)로 이루어진 결함의 확대를 지지하기 위한 버퍼구조 위에 형성된 Ⅲ-V족 화합물 반도체 층(15)를 가지며, 상기 두번째 물질층이 변화한 구성단면과 첫번째 Ⅲ족원소와 다른 첫번째 Ⅲ족원소와 두번째 Ⅲ족원소를 포함하고, 두번째 Ⅲ족원소의 함량이 두번째 물질층의 상하 경계로 감소되는 특징을 갖는 반도체 장치.
- 청구범위 제1항에 있어서, 두번째 Ⅲ족원소의 함량이 두번째 물질층(14)의 단계적으로 변하는 특징을 갖는 반도체 장치.
- 청구범위 제1항에 있어서, 두번째 Ⅲ족원소의 함량이 두번째 물질층(14)에서 연속적으로 변하는 특징을 갖는 반도체 장치.
- 청구범위 제1항에 있어서, 두번째 Ⅲ족원소의 함량이 상하 경계에서 0인 것을 특징으로 하는 반도체 장치.
- 청구범위 제1항에 있어서, 거기에 두번째 물질층(14)에서 두번째 Ⅲ족원소의 함량으로 최대인 것을 특징으로 하는 반도체 장치.
- 청구범위 제1항에 있어서, 거기에 두번째 물질층(14)에서 두번째 Ⅲ족원소의 함량으로 최대량을 갖는 것을 특징으로 하는 반도체 장치.
- 청구범위 제1항에 있어서, 상기 첫번째 Ⅲ족 원소가 갈리움으로 이루어지고, 상기 두번째 Ⅲ족 원소가 인듐으로 이루어진 것을 특징으로 하는 반도체 장치.
- 청구범위 제1항에 있어서, 상기 첫번째 물질층(13)이 Ⅲ-V족 화합물 반도체 층(15)의 그것으로부터의 혼합물과 다른 반도체 기판(11) 위에 제공된 것을 특징으로 하는 반도체 장치.
- 청구범위 제8항에 있어서, 반도체 기판(11)이 실리콘으로 이루어진 것을 특징으로 하는 반도체 장치.
- 청구범위 제1항에 있어서, 첫번째 물질층(13)이 Ⅲ-V족 화합물 반도체 층(15)에서의 혼합물과 같은 Ⅲ-V족 화합물 반도체 기판의 기판을 형성하는 것을 특징으로 하는 반도체 장치.
- 청구범위 제10항에 있어서, 첫번째 물질층(13)이 갈리움 아세나이드로 이루어진 것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-325631 | 1988-12-22 | ||
JP88-325631 | 1988-12-22 | ||
JP63325631A JPH02170413A (ja) | 1988-12-22 | 1988-12-22 | 化合物半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900010924A true KR900010924A (ko) | 1990-07-11 |
KR930009805B1 KR930009805B1 (ko) | 1993-10-11 |
Family
ID=18179010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890019297A KR930009805B1 (ko) | 1988-12-22 | 1989-12-22 | 반도체 층 성장으로 부터 결함을 제거하기 위한 버퍼구조를 갖는 반도체장치. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5134446A (ko) |
EP (1) | EP0375564B1 (ko) |
JP (1) | JPH02170413A (ko) |
KR (1) | KR930009805B1 (ko) |
DE (1) | DE68913479D1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100355636B1 (ko) * | 2000-03-10 | 2002-10-11 | 광주과학기술원 | 인듐갈륨알소나이드 콜렉터 에이치비티의 에피택시얼구조 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03136319A (ja) * | 1989-10-23 | 1991-06-11 | Fujitsu Ltd | ヘテロエピタキシャル基板および半導体装置 |
CA2062134C (en) * | 1991-05-31 | 1997-03-25 | Ibm | Heteroepitaxial layers with low defect density and arbitrary network parameter |
JP3116731B2 (ja) * | 1994-07-25 | 2000-12-11 | 株式会社日立製作所 | 格子不整合系積層結晶構造およびそれを用いた半導体装置 |
US6423990B1 (en) | 1997-09-29 | 2002-07-23 | National Scientific Corporation | Vertical heterojunction bipolar transistor |
US5912481A (en) * | 1997-09-29 | 1999-06-15 | National Scientific Corp. | Heterojunction bipolar transistor having wide bandgap, low interdiffusion base-emitter junction |
US6087683A (en) * | 1998-07-31 | 2000-07-11 | Lucent Technologies | Silicon germanium heterostructure bipolar transistor with indium doped base |
US6594293B1 (en) | 2001-02-08 | 2003-07-15 | Amberwave Systems Corporation | Relaxed InxGa1-xAs layers integrated with Si |
US6589335B2 (en) | 2001-02-08 | 2003-07-08 | Amberwave Systems Corporation | Relaxed InxGa1-xAs layers integrated with Si |
WO2002063665A2 (en) * | 2001-02-08 | 2002-08-15 | Amberwave Systems Corporation | RELAXED InXGa1-xAs LAYERS INTEGRATED WITH Si |
US7227174B2 (en) * | 2003-06-26 | 2007-06-05 | Rj Mears, Llc | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction |
JP4333426B2 (ja) * | 2004-03-19 | 2009-09-16 | ソニー株式会社 | 化合物半導体の製造方法、及び半導体装置の製造方法 |
DE102011107657A1 (de) * | 2011-07-12 | 2013-01-17 | Nasp Iii/V Gmbh | Monolithische integrierte Halbleiterstruktur |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3821033A (en) * | 1972-08-03 | 1974-06-28 | Ibm | Method for producing flat composite semiconductor substrates |
US4568958A (en) * | 1984-01-03 | 1986-02-04 | General Electric Company | Inversion-mode insulated-gate gallium arsenide field-effect transistors |
JPH0650723B2 (ja) * | 1984-10-17 | 1994-06-29 | 日本電気株式会社 | エピタキシヤル成長方法 |
US4768074A (en) * | 1984-11-20 | 1988-08-30 | Kabushiki Kaisha Toshiba | Heterojunction bipolar transistor having an emitter region with a band gap greater than that of a base region |
US4872046A (en) * | 1986-01-24 | 1989-10-03 | University Of Illinois | Heterojunction semiconductor device with <001> tilt |
US4806996A (en) * | 1986-04-10 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dislocation-free epitaxial layer on a lattice-mismatched porous or otherwise submicron patterned single crystal substrate |
US4769341A (en) * | 1986-12-29 | 1988-09-06 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors |
-
1988
- 1988-12-22 JP JP63325631A patent/JPH02170413A/ja active Pending
-
1989
- 1989-12-22 EP EP89403641A patent/EP0375564B1/en not_active Expired - Lifetime
- 1989-12-22 KR KR1019890019297A patent/KR930009805B1/ko not_active IP Right Cessation
- 1989-12-22 DE DE89403641T patent/DE68913479D1/de not_active Expired - Lifetime
-
1991
- 1991-07-01 US US07/725,889 patent/US5134446A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100355636B1 (ko) * | 2000-03-10 | 2002-10-11 | 광주과학기술원 | 인듐갈륨알소나이드 콜렉터 에이치비티의 에피택시얼구조 |
Also Published As
Publication number | Publication date |
---|---|
DE68913479D1 (de) | 1994-04-07 |
US5134446A (en) | 1992-07-28 |
EP0375564A1 (en) | 1990-06-27 |
EP0375564B1 (en) | 1994-03-02 |
KR930009805B1 (ko) | 1993-10-11 |
JPH02170413A (ja) | 1990-07-02 |
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