KR930015149A - 규소저매늄/저매늄 완충층을 이용한 규소기판상의 갈륨비소 박막성장방법 - Google Patents
규소저매늄/저매늄 완충층을 이용한 규소기판상의 갈륨비소 박막성장방법 Download PDFInfo
- Publication number
- KR930015149A KR930015149A KR1019910024258A KR910024258A KR930015149A KR 930015149 A KR930015149 A KR 930015149A KR 1019910024258 A KR1019910024258 A KR 1019910024258A KR 910024258 A KR910024258 A KR 910024258A KR 930015149 A KR930015149 A KR 930015149A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- low maenyum
- silicon
- maenyum
- gallium arsenide
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title claims abstract 3
- 238000004904 shortening Methods 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Abstract
본 발명은 규소저매늄/저매늄을 완충층으로 하여 규소기판상의 갈륨비소층을 형성하기 위한 박막성장방법에 관한 것이다.
그 제조방법은 규소기판(4)상에 규소저매늄 박막(1)을 성장하되 저매늄의 분자함량을 점증시켜 에너지띠 단격이 규소에서 재매늄값으로 변화될 때 성장하는 공정과, 상기 규소저매늄 박막(1)상에 저매늄 박막(2)을 성장하는 공정과, 상기 저매늄 박막(2)상에 갈륨비소층(3)을 형성하는 공정을 포함하여, 상기 규소기판(4)과 갈륨비소층(3) 사이에 있는 규소저매늄 박막(1)과 저매늄 박막(2)을 완충층으로 한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 규소저매늄/저매늄 완충층을 이용하여 규소기판위에 성장된 갈륨비소박막이 형성된 구조의 단면도,
제2도는 본 발명의 규소저매늄/저매늄 완충층을 이용하여 규소위에 성장된 갈륨비소 박막등의 에너지띠 간격 도식도.
Claims (1)
- 규소기판(4)상에 규소저매늄 박막(1)을 성장하되 저매늄의 분자함량을 점증시켜 에너지띠 단격이 규소에서 저매늄값으로 변화될 때 성장하는 공정과, 상기 규소저매늄 박막(1)상에 저매늄 박막(2)을 성장하는 공정과, 상기 저매늄 박막(2)상에 갈륨비소층(3)을 형성하는 공정을 포함하여, 상기 규소기판(4)과 갈륨비소층(3) 사이에 있는 규소저매늄 박막(1)과 저매늄 박막(2)을 완충층으로 하는 규소기판상의 갈륨비소 박막성장방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910024258A KR950001620B1 (ko) | 1991-12-24 | 1991-12-24 | 규소저매늄/저매늄 완충층을 이용한 규소기판상의 갈륨비소 박막성장방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910024258A KR950001620B1 (ko) | 1991-12-24 | 1991-12-24 | 규소저매늄/저매늄 완충층을 이용한 규소기판상의 갈륨비소 박막성장방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930015149A true KR930015149A (ko) | 1993-07-23 |
| KR950001620B1 KR950001620B1 (ko) | 1995-02-27 |
Family
ID=19325919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910024258A KR950001620B1 (ko) | 1991-12-24 | 1991-12-24 | 규소저매늄/저매늄 완충층을 이용한 규소기판상의 갈륨비소 박막성장방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR950001620B1 (ko) |
-
1991
- 1991-12-24 KR KR1019910024258A patent/KR950001620B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950001620B1 (ko) | 1995-02-27 |
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| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
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Payment date: 19990201 Year of fee payment: 5 |
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| LAPS | Lapse due to unpaid annual fee |