KR880003401A - 고속 반도체장치 및 그 제조방법 - Google Patents

고속 반도체장치 및 그 제조방법 Download PDF

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Publication number
KR880003401A
KR880003401A KR870009226A KR870009226A KR880003401A KR 880003401 A KR880003401 A KR 880003401A KR 870009226 A KR870009226 A KR 870009226A KR 870009226 A KR870009226 A KR 870009226A KR 880003401 A KR880003401 A KR 880003401A
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South Korea
Prior art keywords
semiconductor device
compound
speed semiconductor
high speed
less
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KR870009226A
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KR950014278B1 (ko
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고시 다마무라
가츠히로 아키모토
준코 오가와
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오가 노리오
소니 가부시키가이샤
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Publication of KR880003401A publication Critical patent/KR880003401A/ko
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Publication of KR950014278B1 publication Critical patent/KR950014278B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

내용 없음

Description

고속 반도체장치 및 그 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명의 설명을 위한 Ⅴ/Ⅲ비와 캐리어 농도와의 관계의 측정결과를 나타낸 곡선도.
제2 및 제3도는 각기(311)B 기판 및 (100)기판상에 MOCVD에 의한 반도체층을 형성한 것의 포토루미네센스 스펙트럼도.
제4도는 본원 발명에 의한 고속 반도체장치의 일례의 약선적 단면도.

Claims (8)

  1. GaAs 기판과, 이 기판위에 형성된 고저항 Ⅲ-Ⅴ족 화합물 반도체층으로 이루어지며, 상기 반도체층은 상기 기판의 (311)B 면상에 형성되는 고속 반도체장치.
  2. 제1항에 있어서, 상기 Ⅲ-Ⅴ족 화합물 AlxGa1-xAs이며, 여기에서 x는 1이하인 고속 반도체장치.
  3. 제1항에 있어서, 상기 Ⅲ-Ⅴ족 화합물은 InyGa1-yAs 이며, 여기에서, y는 1이하인 고속 반도체장치.
  4. 제1항에 있어서, 상기 화합물 반도체의 Ⅲ족 원료에 대한 Ⅴ족 원료의비(Ⅴ/Ⅲ비)가 100/1이하인 고속 반도체장치.
  5. 제1항에 있어서, 상기 반도체층은 유기금속기성장(MOCVD)에 의해 형성된 고속 반도체장치.
  6. GaAs 기판을 배설하고, 유기금속기성장(MOCVD)에 의해 상기 기판의 (311)B면에 고저항 Ⅲ-Ⅴ족 화합물 반도체층을 형성함으로써 이루어지는 고속 반도체장치의 제조방법.
  7. 제6항에 있어서, 상기 Ⅲ-Ⅴ족 화합물은 AlxGa1-xAs 이며, 여기에서 x는 1이하인 고속 반도체장치의 제조방법.
  8. 제6항에 있어서, 상기 Ⅲ-Ⅴ족 화합물은 InxGa1-xAs이며, 여기에서 x는 1이하인 고속반도체장치의제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870009226A 1986-08-28 1987-08-24 고속 반도체장치 및 그 제조 방법 KR950014278B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP86-202110 1986-08-28
JP61202110A JPH0783109B2 (ja) 1986-08-28 1986-08-28 高速半導体装置
JP202110 1986-08-28

Publications (2)

Publication Number Publication Date
KR880003401A true KR880003401A (ko) 1988-05-16
KR950014278B1 KR950014278B1 (ko) 1995-11-24

Family

ID=16452126

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870009226A KR950014278B1 (ko) 1986-08-28 1987-08-24 고속 반도체장치 및 그 제조 방법

Country Status (5)

Country Link
JP (1) JPH0783109B2 (ko)
KR (1) KR950014278B1 (ko)
DE (1) DE3728524C2 (ko)
FR (1) FR2611313A1 (ko)
GB (1) GB2195050B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910007414B1 (ko) * 1989-03-18 1991-09-25 재단법인 한국전자통신연구소 도핑 효과를 개선한 이질구조 화합물 반도체 소자의 제조방법
JPH03278542A (ja) * 1990-03-28 1991-12-10 Hitachi Ltd 半導体装置
EP0535293A1 (en) * 1991-01-29 1993-04-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of fabricating a compositional semiconductor device
JP3360105B2 (ja) * 1994-03-04 2002-12-24 富士通株式会社 半導体装置の製造方法
WO2008063704A2 (en) 2006-05-03 2008-05-29 Rochester Institute Of Technology Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof
JP2010225981A (ja) 2009-03-25 2010-10-07 Fujitsu Ltd 光半導体素子、集積素子、光半導体素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830787B1 (ko) * 1967-12-28 1973-09-22
US3721583A (en) * 1970-12-08 1973-03-20 Ibm Vapor phase epitaxial deposition process for forming superlattice structure
JPS52101698A (en) * 1976-02-23 1977-08-25 Toshiba Corp Vapor phase growth of gallium arsenide
US4122407A (en) * 1976-04-06 1978-10-24 International Business Machines Corporation Heterostructure junction light emitting or responding or modulating devices

Also Published As

Publication number Publication date
DE3728524C2 (de) 1996-05-09
GB2195050B (en) 1990-05-30
DE3728524A1 (de) 1988-03-10
JPH0783109B2 (ja) 1995-09-06
FR2611313A1 (fr) 1988-08-26
KR950014278B1 (ko) 1995-11-24
JPS6356960A (ja) 1988-03-11
GB2195050A (en) 1988-03-23
GB8719817D0 (en) 1987-09-30

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