KR880011889A - Iii-v족 화합물 반도체 에피택셜층 성장방법 - Google Patents

Iii-v족 화합물 반도체 에피택셜층 성장방법 Download PDF

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KR880011889A
KR880011889A KR1019880003267A KR880003267A KR880011889A KR 880011889 A KR880011889 A KR 880011889A KR 1019880003267 A KR1019880003267 A KR 1019880003267A KR 880003267 A KR880003267 A KR 880003267A KR 880011889 A KR880011889 A KR 880011889A
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layer
group
compound semiconductor
semiconductor epitaxial
iii
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KR910006589B1 (ko
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고우지 모찌즈끼
마사시 오제끼
노부유끼 오쯔까
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야마모도 다꾸마
후지쓰 가부시끼가이샤
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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  • Recrystallisation Techniques (AREA)

Abstract

내용 없음

Description

III-V족 화합물 반도체 에피택셜층 성장방법.
제7도는 본 발명에 의한 방법의 일실시예의 방법들을 수행하도록 사용되는 장치를 나타내는 도면.
제8A,8B 및 8C도는 실시예의 제1, 제2, 제3 각 단계들에서 GaAs 기판의 (100) 평면상에 AIAs 에피택셜층의 성장을 설명하기 위한 모델을 나타내는 도면,
제9A 및 9B도는 실시예에서 AI과 As의 각각의 공급을 나타내는 도면.

Claims (2)

  1. 원자층 에피택시를 사용하여 기판상에 III-V족 화합물 반도체 에피택셜층을 성장시키는 방법에 있어서, III-V족 화합물 반도체 에피택셜층 중에서, AI을 포함하는층의 표면밀도의 2배에 상당하는 알미늄 양을 공급해줌으로서 기판의 {100}, (111)B, (111)B, (111)B, 및 (111)B평면들 중 하나사이에 알미늄층을 성장시키는 단계와, 그리고 III-V족 화합물 반도체 에피택셜층 중에서 V족 물질을 포함하는 층의 표면밀도의 2배에 상당하는 V족 물질의 양을 공급해줌으로서 알미늄층 상에 V족 물질층을 성장시키는 단계를 포함하며, 상기 V족 물질층과 상기 알미늄층은 상기 III-V족 화합물 반도체 에피택셜층을 구성하는 것이 특징인 III-V족 화합물 반도체 에피택셜층 성장방법.
  2. 원자층 에피택시를 사용하여 기판상에 III-V족 화합물 반도체 에피택셜층을 성장시키는 방법에 있어서, III-V족 화합물 반도체 에피택셜층 중에서, A1을 포함하는 층의 표면밀도의 2배에 상당하는 알미늄 양을 공급해줌으로서 기판의 {110}평명들 중 하나상에 알미늄층을 성장시키는 단계와, 그리고 III-V족 화합물 반도체 에피택셜층 중에서 V족 물질을 포함하는 층의 표면밀도의 2배에 상당하는 V족 물질의 양을 공급해줌으로서 알미늄층상에 V족 물질층을 성장시키는 단계를 포함하며, 상기 V족 물질층과 상기 알미늄층은 상기 III-V족 화합물 반도체 에피택셜층을 구성하는 것이 특징인 III-V족 화합물 반도체 에피택셜층 성장방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003267A 1987-03-27 1988-03-25 Ⅲ-v족 화합물 반도체 에피택셜층 성장 방법 KR910006589B1 (ko)

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JP62071747A JPH0727861B2 (ja) 1987-03-27 1987-03-27 ▲ｉｉｉ▼−▲ｖ▼族化合物半導体結晶の成長方法
JP62-71747 1987-03-27

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KR880011889A true KR880011889A (ko) 1988-10-31
KR910006589B1 KR910006589B1 (ko) 1991-08-28

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US (1) US4861417A (ko)
EP (1) EP0284516B1 (ko)
JP (1) JPH0727861B2 (ko)
KR (1) KR910006589B1 (ko)
DE (1) DE3875992T2 (ko)

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Publication number Publication date
US4861417A (en) 1989-08-29
EP0284516A1 (en) 1988-09-28
JPS63239918A (ja) 1988-10-05
DE3875992T2 (de) 1993-03-25
KR910006589B1 (ko) 1991-08-28
DE3875992D1 (de) 1992-12-24
JPH0727861B2 (ja) 1995-03-29
EP0284516B1 (en) 1992-11-19

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