KR900008524A - 다이나믹 반도체 기억장치 - Google Patents

다이나믹 반도체 기억장치

Info

Publication number
KR900008524A
KR900008524A KR1019890016103A KR890016103A KR900008524A KR 900008524 A KR900008524 A KR 900008524A KR 1019890016103 A KR1019890016103 A KR 1019890016103A KR 890016103 A KR890016103 A KR 890016103A KR 900008524 A KR900008524 A KR 900008524A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
dynamic semiconductor
dynamic
memory
semiconductor
Prior art date
Application number
KR1019890016103A
Other languages
English (en)
Other versions
KR930006840B1 (ko
Inventor
다이사부로 다카시마
유키히토 오와키
겐지 츠치다
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63280636A external-priority patent/JP2783563B2/ja
Priority claimed from JP1002459A external-priority patent/JPH02182065A/ja
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900008524A publication Critical patent/KR900008524A/ko
Application granted granted Critical
Publication of KR930006840B1 publication Critical patent/KR930006840B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019890016103A 1988-11-07 1989-11-07 다이나믹 반도체 기억장치 KR930006840B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP88-280636 1988-11-07
JP63280636A JP2783563B2 (ja) 1988-11-07 1988-11-07 ダイナミック型半導体記憶装置
JP1002459A JPH02182065A (ja) 1989-01-09 1989-01-09 コードレス電話機
JP89-2459 1989-01-09

Publications (2)

Publication Number Publication Date
KR900008524A true KR900008524A (ko) 1990-06-03
KR930006840B1 KR930006840B1 (ko) 1993-07-24

Family

ID=26335831

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016103A KR930006840B1 (ko) 1988-11-07 1989-11-07 다이나믹 반도체 기억장치

Country Status (1)

Country Link
KR (1) KR930006840B1 (ko)

Also Published As

Publication number Publication date
KR930006840B1 (ko) 1993-07-24

Similar Documents

Publication Publication Date Title
KR890012387A (ko) 반도체 기억장치
NL193295B (nl) Dynamische halfgeleidergeheugeneenheid.
DE69031276D1 (de) Halbleiterspeicheranordnung
DE68926811T2 (de) Halbleiterspeicheranordnung
DE68911044T2 (de) Halbleiterspeicher.
KR900012278A (ko) 반도체 기억장치
KR900012276A (ko) 다이내믹형 반도체기억장치
DE69121483D1 (de) Dynamische Halbleiterspeicherzelle
DE3876415T2 (de) Dynamischer direktzugriffsspeicher.
KR900015160A (ko) 반도체 기억장치
KR880013252A (ko) 반도체 기억장치
KR890016569A (ko) 반도체 기억장치
KR900011010A (ko) 반도체 기억장치
DE69120448D1 (de) Halbleiterspeicheranordnungen von dynamischem Typus
DE68926124D1 (de) Halbleiterspeicheranordnung
DE68918193T2 (de) Halbleiterspeicher.
KR900008521A (ko) 반도체 기억장치
KR900006986A (ko) 반도체메모리
DE69024945D1 (de) Halbleiterspeicheranordnung
KR860007747A (ko) 다이내믹형 반도체기억장치
DE69120447D1 (de) Halbleiterspeicheranordnung von dynamischem Typus
DE68923899D1 (de) Halbleiterspeicher.
DE69025284D1 (de) Halbleiterspeicher dynamischen Typs
DE69027895T2 (de) Halbleiterspeicher
KR900008675A (ko) 반도체기억장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090626

Year of fee payment: 17

EXPY Expiration of term