DE69025284D1 - Halbleiterspeicher dynamischen Typs - Google Patents

Halbleiterspeicher dynamischen Typs

Info

Publication number
DE69025284D1
DE69025284D1 DE69025284T DE69025284T DE69025284D1 DE 69025284 D1 DE69025284 D1 DE 69025284D1 DE 69025284 T DE69025284 T DE 69025284T DE 69025284 T DE69025284 T DE 69025284T DE 69025284 D1 DE69025284 D1 DE 69025284D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
dynamic type
memory dynamic
type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69025284T
Other languages
English (en)
Other versions
DE69025284T2 (de
Inventor
Masahiko Sakagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE69025284D1 publication Critical patent/DE69025284D1/de
Application granted granted Critical
Publication of DE69025284T2 publication Critical patent/DE69025284T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE69025284T 1989-12-01 1990-11-26 Halbleiterspeicher dynamischen Typs Expired - Fee Related DE69025284T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31363089 1989-12-01

Publications (2)

Publication Number Publication Date
DE69025284D1 true DE69025284D1 (de) 1996-03-21
DE69025284T2 DE69025284T2 (de) 1996-06-27

Family

ID=18043634

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69025284T Expired - Fee Related DE69025284T2 (de) 1989-12-01 1990-11-26 Halbleiterspeicher dynamischen Typs

Country Status (4)

Country Link
US (1) US5227697A (de)
EP (1) EP0430614B1 (de)
KR (1) KR940008202B1 (de)
DE (1) DE69025284T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297097A (en) * 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
JP3319610B2 (ja) * 1991-11-22 2002-09-03 日本テキサス・インスツルメンツ株式会社 信号伝達回路
JP3084801B2 (ja) * 1991-06-27 2000-09-04 日本電気株式会社 半導体メモリ装置
JP3105319B2 (ja) * 1991-12-19 2000-10-30 株式会社 沖マイクロデザイン シリアルアクセスメモリ
JP2940844B2 (ja) * 1992-09-08 1999-08-25 シャープ株式会社 半導体記憶装置
US5754478A (en) * 1993-04-20 1998-05-19 Micron Technology, Inc. Fast, low power, write scheme for memory circuits using pulsed off isolation device
US5369622A (en) * 1993-04-20 1994-11-29 Micron Semiconductor, Inc. Memory with isolated digit lines
US5521874A (en) * 1994-12-14 1996-05-28 Sun Microsystems, Inc. High speed differential to single ended sense amplifier
US6097242A (en) * 1998-02-26 2000-08-01 Micron Technology, Inc. Threshold voltage compensation circuits for low voltage and low power CMOS integrated circuits
US6154386A (en) * 1998-06-16 2000-11-28 G-Link Technology Memory device having a wide data path
KR100843139B1 (ko) * 2005-12-15 2008-07-02 삼성전자주식회사 오픈 비트 라인 구조를 갖는 멀티레벨 동적 메모리 장치 및그 구동 방법
KR101155451B1 (ko) * 2011-08-31 2012-06-15 테세라, 인코포레이티드 Ｄｒａｍ 보안 소거
US9029956B2 (en) 2011-10-26 2015-05-12 Global Foundries, Inc. SRAM cell with individual electrical device threshold control
US9048136B2 (en) 2011-10-26 2015-06-02 GlobalFoundries, Inc. SRAM cell with individual electrical device threshold control

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132492A (ja) * 1982-12-22 1984-07-30 Fujitsu Ltd 半導体記憶装置
JPS6079597A (ja) * 1983-10-06 1985-05-07 Mitsubishi Electric Corp 半導体メモリ装置
US4587629A (en) * 1983-12-30 1986-05-06 International Business Machines Corporation Random address memory with fast clear
JPS61253695A (ja) * 1985-05-07 1986-11-11 Hitachi Ltd 半導体記憶装置
JPS63149899A (ja) * 1986-12-15 1988-06-22 Toshiba Corp 半導体メモリ
US4858182A (en) * 1986-12-19 1989-08-15 Texas Instruments Incorporated High speed zero power reset circuit for CMOS memory cells
JPH0612612B2 (ja) * 1987-03-06 1994-02-16 株式会社東芝 半導体記憶装置
EP0321847B1 (de) * 1987-12-21 1994-06-29 Kabushiki Kaisha Toshiba Halbleiterspeicher, der fähig zur Verbesserung der Datenwiedereinschreibgeschwindigkeit ist
JPH0283892A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US5227697A (en) 1993-07-13
KR940008202B1 (ko) 1994-09-08
EP0430614A3 (en) 1992-07-01
EP0430614A2 (de) 1991-06-05
DE69025284T2 (de) 1996-06-27
EP0430614B1 (de) 1996-02-07
KR910013277A (ko) 1991-08-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8339 Ceased/non-payment of the annual fee