KR900007275B1 - 다이나믹(Dynamic) RAM 집적회로 장치 - Google Patents

다이나믹(Dynamic) RAM 집적회로 장치 Download PDF

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Publication number
KR900007275B1
KR900007275B1 KR8205428A KR820005428A KR900007275B1 KR 900007275 B1 KR900007275 B1 KR 900007275B1 KR 8205428 A KR8205428 A KR 8205428A KR 820005428 A KR820005428 A KR 820005428A KR 900007275 B1 KR900007275 B1 KR 900007275B1
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KR
South Korea
Prior art keywords
data lines
line
data line
pair
dynamic ram
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Expired
Application number
KR8205428A
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English (en)
Korean (ko)
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KR840003146A (ko
Inventor
히로미 마쓰우라
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
오시다 겐이찌
히다찌마이크로 컴퓨우터 엔지니어링 가부시기가이샤
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Publication date
Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼, 오시다 겐이찌, 히다찌마이크로 컴퓨우터 엔지니어링 가부시기가이샤 filed Critical 미쓰다 가쓰시게
Publication of KR840003146A publication Critical patent/KR840003146A/ko
Application granted granted Critical
Publication of KR900007275B1 publication Critical patent/KR900007275B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR8205428A 1981-12-25 1982-12-03 다이나믹(Dynamic) RAM 집적회로 장치 Expired KR900007275B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56209397A JPS58111183A (ja) 1981-12-25 1981-12-25 ダイナミツクｒａｍ集積回路装置
JP56-209397 1981-12-25

Publications (2)

Publication Number Publication Date
KR840003146A KR840003146A (ko) 1984-08-13
KR900007275B1 true KR900007275B1 (ko) 1990-10-06

Family

ID=16572215

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8205428A Expired KR900007275B1 (ko) 1981-12-25 1982-12-03 다이나믹(Dynamic) RAM 집적회로 장치

Country Status (10)

Country Link
US (1) US4551820A (cg-RX-API-DMAC10.html)
JP (1) JPS58111183A (cg-RX-API-DMAC10.html)
KR (1) KR900007275B1 (cg-RX-API-DMAC10.html)
DE (1) DE3247538A1 (cg-RX-API-DMAC10.html)
FR (1) FR2519177B1 (cg-RX-API-DMAC10.html)
GB (2) GB2112568B (cg-RX-API-DMAC10.html)
HK (2) HK1788A (cg-RX-API-DMAC10.html)
IT (1) IT1153915B (cg-RX-API-DMAC10.html)
MY (1) MY8700799A (cg-RX-API-DMAC10.html)
SG (1) SG88187G (cg-RX-API-DMAC10.html)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054471A (ja) * 1983-09-05 1985-03-28 Hitachi Ltd 半導体メモリ
JPS6085492A (ja) * 1983-10-17 1985-05-14 Hitachi Ltd ダイナミツクメモリ装置
US4961166A (en) * 1984-05-07 1990-10-02 Hitachi, Ltd. Dynamic RAM having a full size dummy cell
US4771404A (en) * 1984-09-05 1988-09-13 Nippon Telegraph And Telephone Corporation Memory device employing multilevel storage circuits
JPH0760858B2 (ja) * 1984-10-26 1995-06-28 三菱電機株式会社 半導体メモリ装置
JPS61110459A (ja) * 1984-11-02 1986-05-28 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリ
JPS61123168A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd 半導体記憶装置
JPS61126690A (ja) * 1984-11-26 1986-06-14 Hitachi Ltd 半導体メモリ
JPH0666442B2 (ja) * 1985-03-08 1994-08-24 三菱電機株式会社 半導体メモリ装置
JPS61230359A (ja) * 1985-04-05 1986-10-14 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH0682802B2 (ja) * 1985-05-23 1994-10-19 三菱電機株式会社 半導体メモリ装置
JPS62117191A (ja) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp 半導体記憶装置
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
CA1305255C (en) * 1986-08-25 1992-07-14 Joseph Lebowitz Marching interconnecting lines in semiconductor integrated circuits
JPH06101229B2 (ja) * 1986-09-09 1994-12-12 三菱電機株式会社 ダイナミツク・ランダム・アクセス・メモリ
KR890003372B1 (ko) * 1986-11-24 1989-09-19 삼성전자 주식회사 다이나믹 랜덤 액세스 메모리 어레이
JPH0632213B2 (ja) * 1987-02-26 1994-04-27 日本電気株式会社 半導体メモリ
JP2534700B2 (ja) * 1987-04-02 1996-09-18 日本電気株式会社 半導体記憶装置
US5249159A (en) * 1987-05-27 1993-09-28 Hitachi, Ltd. Semiconductor memory
JP3005223B2 (ja) * 1988-06-27 2000-01-31 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
JPH0828467B2 (ja) * 1988-11-15 1996-03-21 株式会社東芝 半導体装置
JP2650377B2 (ja) * 1988-12-13 1997-09-03 富士通株式会社 半導体集積回路
US5307356A (en) * 1990-04-16 1994-04-26 International Business Machines Corporation Interlocked on-chip ECC system
KR950011645B1 (ko) * 1990-08-13 1995-10-07 닛본덴기 가부시끼가이샤 반도체 기억 장치
US5278105A (en) * 1992-08-19 1994-01-11 Intel Corporation Semiconductor device with dummy features in active layers
US6490214B2 (en) * 2000-12-26 2002-12-03 Kabushiki Kaisha Toshiba Semiconductor memory device
US6788614B2 (en) 2001-06-14 2004-09-07 Micron Technology, Inc. Semiconductor memory with wordline timing
US9478556B2 (en) * 2014-09-11 2016-10-25 Kabushiki Kaisha Toshiba Semiconductor memory device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539073B2 (cg-RX-API-DMAC10.html) * 1974-12-25 1980-10-08
US4045783A (en) * 1976-04-12 1977-08-30 Standard Microsystems Corporation Mos one transistor cell ram having divided and balanced bit lines, coupled by regenerative flip-flop sense amplifiers, and balanced access circuitry
SU928412A1 (ru) * 1976-09-30 1982-05-15 Предприятие П/Я Р-6429 Матричный накопитель дл интегрального запоминающего устройства
DE2647394C2 (de) * 1976-10-20 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen MOS-Halbleiterspeicherbaustein
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
JPS57111061A (en) * 1980-12-26 1982-07-10 Fujitsu Ltd Semiconductor memory unit

Also Published As

Publication number Publication date
SG88187G (en) 1988-06-03
DE3247538A1 (de) 1983-08-04
IT8224991A1 (it) 1984-06-24
GB2112568A (en) 1983-07-20
IT1153915B (it) 1987-01-21
HK1788A (en) 1988-01-15
GB2155239A (en) 1985-09-18
DE3247538C2 (cg-RX-API-DMAC10.html) 1991-12-05
GB2112568B (en) 1986-02-26
MY8700799A (en) 1987-12-31
JPH0381233B2 (cg-RX-API-DMAC10.html) 1991-12-27
FR2519177A1 (fr) 1983-07-01
KR840003146A (ko) 1984-08-13
GB2155239B (en) 1986-02-26
HK1888A (en) 1988-01-15
GB8505714D0 (en) 1985-04-11
JPS58111183A (ja) 1983-07-02
FR2519177B1 (fr) 1987-12-18
US4551820A (en) 1985-11-05
IT8224991A0 (it) 1982-12-24

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