KR900006586B1 - 레이저 스크라이빙 장치와 방법 - Google Patents

레이저 스크라이빙 장치와 방법 Download PDF

Info

Publication number
KR900006586B1
KR900006586B1 KR1019870010550A KR870010550A KR900006586B1 KR 900006586 B1 KR900006586 B1 KR 900006586B1 KR 1019870010550 A KR1019870010550 A KR 1019870010550A KR 870010550 A KR870010550 A KR 870010550A KR 900006586 B1 KR900006586 B1 KR 900006586B1
Authority
KR
South Korea
Prior art keywords
laser beam
laser
substrate
focusing
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870010550A
Other languages
English (en)
Korean (ko)
Other versions
KR880004610A (ko
Inventor
히사토 시노하라
Original Assignee
세미콘닥터 에너지 라보라토리 캄파니 리미티드
야마자끼 슌페이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세미콘닥터 에너지 라보라토리 캄파니 리미티드, 야마자끼 슌페이 filed Critical 세미콘닥터 에너지 라보라토리 캄파니 리미티드
Publication of KR880004610A publication Critical patent/KR880004610A/ko
Application granted granted Critical
Publication of KR900006586B1 publication Critical patent/KR900006586B1/ko
Expired legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073Shaping the laser spot
    • B23K26/0738Shaping the laser spot into a linear shape
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0688Etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/16Composite materials, e.g. fibre reinforced
    • B23K2103/166Multilayered materials
    • B23K2103/172Multilayered materials wherein at least one of the layers is non-metallic
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
KR1019870010550A 1986-09-26 1987-09-23 레이저 스크라이빙 장치와 방법 Expired KR900006586B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22952 1986-02-28
JP61-229252 1986-09-26
JP61229252A JPS6384789A (ja) 1986-09-26 1986-09-26 光加工方法

Publications (2)

Publication Number Publication Date
KR880004610A KR880004610A (ko) 1988-06-07
KR900006586B1 true KR900006586B1 (ko) 1990-09-13

Family

ID=16889196

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010550A Expired KR900006586B1 (ko) 1986-09-26 1987-09-23 레이저 스크라이빙 장치와 방법

Country Status (4)

Country Link
US (3) US4861964A (enExample)
JP (1) JPS6384789A (enExample)
KR (1) KR900006586B1 (enExample)
CN (1) CN1018621B (enExample)

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPH039309A (ja) * 1989-06-06 1991-01-17 Brother Ind Ltd レーザによる溝加工方法
US5744776A (en) * 1989-07-14 1998-04-28 Tip Engineering Group, Inc. Apparatus and for laser preweakening an automotive trim cover for an air bag deployment opening
US5151389A (en) * 1990-09-10 1992-09-29 Rockwell International Corporation Method for dicing semiconductor substrates using an excimer laser beam
FR2679477B1 (fr) * 1991-07-26 1995-11-17 Aerospatiale Procede de decoupe par faisceau laser d'un materiau recouvrant un substrat et dispositifs pour sa mise en óoeuvre.
US5432015A (en) * 1992-05-08 1995-07-11 Westaim Technologies, Inc. Electroluminescent laminate with thick film dielectric
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
US5514850A (en) * 1992-06-30 1996-05-07 Sharp Kabushiki Kaisha Defect compensation method for smoothing a surface of a transparent plate with an ArF excimer laser beam
US5372287A (en) * 1992-10-05 1994-12-13 Deguevara; Orlando Article carrier
JP2706716B2 (ja) * 1993-04-16 1998-01-28 株式会社 半導体エネルギー研究所 被膜加工装置および被膜加工方法
CN1125411A (zh) * 1993-06-11 1996-06-26 博士伦公司 使激光蚀刻表面上所形成的衍射槽纹最小化的方法
JPH07308788A (ja) * 1994-05-16 1995-11-28 Sanyo Electric Co Ltd 光加工法及び光起電力装置の製造方法
JPH07336055A (ja) * 1994-06-06 1995-12-22 Hitachi Seiko Ltd レーザ加工方法及びその装置
CA2179045A1 (en) * 1994-12-28 1996-06-29 Kyoji Kokufuda Method and apparatus for processing rollers, etc, by laser beam
WO1996033839A1 (en) 1995-04-26 1996-10-31 Minnesota Mining And Manufacturing Company Method and apparatus for step and repeat exposures
US6524977B1 (en) * 1995-07-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
JP3292058B2 (ja) 1996-10-01 2002-06-17 三菱電機株式会社 レーザ光による配線基板の加工方法及びその装置
US6246524B1 (en) 1998-07-13 2001-06-12 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6413839B1 (en) * 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6303899B1 (en) 1998-12-11 2001-10-16 Lsi Logic Corporation Method and apparatus for scribing a code in an inactive outer clear out area of a semiconductor wafer
US6420245B1 (en) 1999-06-08 2002-07-16 Kulicke & Soffa Investments, Inc. Method for singulating semiconductor wafers
US6562698B2 (en) 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
US6555447B2 (en) 1999-06-08 2003-04-29 Kulicke & Soffa Investments, Inc. Method for laser scribing of wafers
US6274395B1 (en) 1999-12-23 2001-08-14 Lsi Logic Corporation Method and apparatus for maintaining test data during fabrication of a semiconductor wafer
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US8217304B2 (en) * 2001-03-29 2012-07-10 Gsi Group Corporation Methods and systems for thermal-based laser processing a multi-material device
US7723642B2 (en) 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US7671295B2 (en) 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
US6719394B2 (en) * 2000-04-14 2004-04-13 Canon Kabushiki Kaisha Semiconductor device, ink tank provided with such semiconductor device, ink jet cartridge, ink jet recording apparatus, method for manufacturing such semiconductor device, and communication system, method for controlling pressure, memory element, security system of ink jet recording apparatus
DE10032981A1 (de) * 2000-07-10 2002-01-24 Alltec Angewandte Laser Licht Verfahren zur Materialbearbeitung mittels Laser
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
US7102647B2 (en) * 2001-06-26 2006-09-05 Microsoft Corporation Interactive horizon mapping
SG143981A1 (en) * 2001-08-31 2008-07-29 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
TWI291729B (en) 2001-11-22 2007-12-21 Semiconductor Energy Lab A semiconductor fabricating apparatus
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US6979605B2 (en) 2001-11-30 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light
US7214573B2 (en) 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
KR100614106B1 (ko) * 2002-03-12 2006-08-22 미쓰보시 다이야몬도 고교 가부시키가이샤 취성재료의 가공방법 및 가공장치
CN101335235B (zh) 2002-03-12 2010-10-13 浜松光子学株式会社 基板的分割方法
US6951995B2 (en) 2002-03-27 2005-10-04 Gsi Lumonics Corp. Method and system for high-speed, precise micromachining an array of devices
US6744009B1 (en) 2002-04-02 2004-06-01 Seagate Technology Llc Combined laser-scribing and laser-breaking for shaping of brittle substrates
US6787732B1 (en) 2002-04-02 2004-09-07 Seagate Technology Llc Method for laser-scribing brittle substrates and apparatus therefor
US6580054B1 (en) 2002-06-10 2003-06-17 New Wave Research Scribing sapphire substrates with a solid state UV laser
US6960813B2 (en) 2002-06-10 2005-11-01 New Wave Research Method and apparatus for cutting devices from substrates
US6806544B2 (en) 2002-11-05 2004-10-19 New Wave Research Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
TWI277612B (en) * 2002-08-09 2007-04-01 Mitsuboshi Diamond Ind Co Ltd Method and device for scribing fragile material substrate
KR101119262B1 (ko) * 2002-12-05 2012-03-16 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
TWI248244B (en) * 2003-02-19 2006-01-21 J P Sercel Associates Inc System and method for cutting using a variable astigmatic focal beam spot
WO2005093801A1 (en) * 2004-03-26 2005-10-06 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7820941B2 (en) * 2004-07-30 2010-10-26 Corning Incorporated Process and apparatus for scoring a brittle material
US7087463B2 (en) * 2004-08-04 2006-08-08 Gelcore, Llc Laser separation of encapsulated submount
US8304313B2 (en) * 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI427682B (zh) 2006-07-04 2014-02-21 半導體能源研究所股份有限公司 顯示裝置的製造方法
JP4887086B2 (ja) * 2006-07-19 2012-02-29 武井電機工業株式会社 薄膜除去方法及び薄膜除去装置
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI412079B (zh) * 2006-07-28 2013-10-11 Semiconductor Energy Lab 製造顯示裝置的方法
TWI427702B (zh) * 2006-07-28 2014-02-21 Semiconductor Energy Lab 顯示裝置的製造方法
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
WO2008023630A1 (en) 2006-08-24 2008-02-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7795154B2 (en) * 2006-08-25 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers
US7749907B2 (en) 2006-08-25 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7927991B2 (en) 2006-08-25 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7651896B2 (en) * 2006-08-30 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) * 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4919738B2 (ja) * 2006-08-31 2012-04-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5110830B2 (ja) * 2006-08-31 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7732351B2 (en) 2006-09-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device and laser processing apparatus
US7867907B2 (en) 2006-10-17 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7767595B2 (en) * 2006-10-26 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5205042B2 (ja) 2006-12-20 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7960261B2 (en) * 2007-03-23 2011-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
JP4402708B2 (ja) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
US8053704B2 (en) * 2008-05-27 2011-11-08 Corning Incorporated Scoring of non-flat materials
JP2010274328A (ja) * 2009-04-30 2010-12-09 Mitsuboshi Diamond Industrial Co Ltd レーザ加工方法及びレーザ加工装置
US20130256286A1 (en) * 2009-12-07 2013-10-03 Ipg Microsystems Llc Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths
US20110132885A1 (en) * 2009-12-07 2011-06-09 J.P. Sercel Associates, Inc. Laser machining and scribing systems and methods
CN102152000A (zh) * 2011-02-21 2011-08-17 武汉吉事达激光技术有限公司 双面透明导电膜图形激光制作工艺
JP2013118277A (ja) * 2011-12-02 2013-06-13 Mitsuboshi Diamond Industrial Co Ltd Ledパターン付き基板の加工方法
JP6000700B2 (ja) * 2012-07-10 2016-10-05 株式会社ディスコ レーザー加工方法
CN102909477A (zh) * 2012-10-31 2013-02-06 北京工业大学 利用超快激光在靶材表面制备大面积微光栅的方法及装置
US10179952B2 (en) * 2013-03-08 2019-01-15 Rutgers, The State University Of New Jersey Patterned thin films by thermally induced mass displacement
EP3007180B1 (en) * 2013-05-28 2018-04-04 Fujikura Ltd. Oxide superconductor and method for manufacturing the same
ES2556541B1 (es) * 2014-07-18 2016-11-03 Wartsila Ibérica, S.A. Método de tratamiento de superficies metálicas, cerámicas o pétreas y superficie obtenible con dicho método
CN105108330A (zh) 2015-08-20 2015-12-02 京东方科技集团股份有限公司 一种分束器、激光发生器及准分子激光退火设备
CN111843216B (zh) * 2020-07-22 2022-09-09 江苏亚威艾欧斯激光科技有限公司 一种玻璃基板侧面加工装置及其加工方法
CN113369996B (zh) * 2021-06-17 2023-03-21 石钢京诚装备技术有限公司 一种在划线工序确定轴类工件端面中心点的工具
WO2024006962A2 (en) * 2022-06-30 2024-01-04 University Of Virginia Patent Foundation Use of lasers to selectively remove materials from substrates

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341565A (en) * 1980-08-26 1982-07-27 American Organics Corporation Liquid colorant composition
JPS5794482A (en) * 1980-12-05 1982-06-11 Hitachi Ltd Pattern forming device by laser
US4468551A (en) * 1982-07-30 1984-08-28 Armco Inc. Laser treatment of electrical steel and optical scanning assembly therefor
US4713518A (en) * 1984-06-08 1987-12-15 Semiconductor Energy Laboratory Co., Ltd. Electronic device manufacturing methods
US4786358A (en) * 1986-08-08 1988-11-22 Semiconductor Energy Laboratory Co., Ltd. Method for forming a pattern of a film on a substrate with a laser beam

Also Published As

Publication number Publication date
CN87106576A (zh) 1988-05-18
JPS6384789A (ja) 1988-04-15
KR880004610A (ko) 1988-06-07
USRE33947E (en) 1992-06-02
CN1018621B (zh) 1992-10-14
US4865686A (en) 1989-09-12
US4861964A (en) 1989-08-29
JPH0563274B2 (enExample) 1993-09-10

Similar Documents

Publication Publication Date Title
KR900006586B1 (ko) 레이저 스크라이빙 장치와 방법
US4190759A (en) Processing of photomask
US4734550A (en) Laser processing method
KR100479962B1 (ko) 반도체소자분리방법
US8598051B2 (en) Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
KR20010095011A (ko) 마이크로 캐비티 홀의 배열을 만들기 위해 레이저 펄스를사용하는 장치 및 방법
KR101268107B1 (ko) 레이저 조사장치, 레이저 조사방법, 및 반도체장치 제조방법
JP2592369B2 (ja) 多層配線回路基板の製造方法及び誘電体ミラーマスクの製造方法
JPS6239539B2 (enExample)
JPS6189636A (ja) 光加工方法
DE102007034644A1 (de) Verfahren und Vorrichtung zur Laserstrukturierung von Solarzellen
JPS62104692A (ja) レ−ザ加工装置
JPS63220991A (ja) 光加工方法
JPH0688149B2 (ja) 光加工方法
JP2706716B2 (ja) 被膜加工装置および被膜加工方法
JP2003205376A (ja) レーザリペア方法およびレーザリペア装置
JPH10125632A (ja) レーザエッチング方法及びその装置
JP2808220B2 (ja) 光照射装置
JPH08112682A (ja) 光加工方法
JPH0626207B2 (ja) 光加工方法
JP2616767B2 (ja) 光処理方法
JPH0356557B2 (enExample)
KR20140100720A (ko) 유리 단차부 이물의 건식 세정 방법 및 장치
JPH0652727B2 (ja) 光加工方法
JP3374889B2 (ja) 薄膜加工方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19870923

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19870923

Comment text: Request for Examination of Application

PG1501 Laying open of application
G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19900813

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19901210

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19910108

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19910108

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19930909

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19940822

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19950824

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 19960821

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 19970821

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 19980901

Start annual number: 9

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20000826

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20010827

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20020909

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20030825

Start annual number: 14

End annual number: 14

PR1001 Payment of annual fee

Payment date: 20040906

Start annual number: 15

End annual number: 15

PR1001 Payment of annual fee

Payment date: 20050825

Start annual number: 16

End annual number: 16

FPAY Annual fee payment

Payment date: 20060810

Year of fee payment: 17

PR1001 Payment of annual fee

Payment date: 20060810

Start annual number: 17

End annual number: 17

EXPY Expiration of term
PC1801 Expiration of term