KR900006586B1 - 레이저 스크라이빙 장치와 방법 - Google Patents
레이저 스크라이빙 장치와 방법 Download PDFInfo
- Publication number
- KR900006586B1 KR900006586B1 KR1019870010550A KR870010550A KR900006586B1 KR 900006586 B1 KR900006586 B1 KR 900006586B1 KR 1019870010550 A KR1019870010550 A KR 1019870010550A KR 870010550 A KR870010550 A KR 870010550A KR 900006586 B1 KR900006586 B1 KR 900006586B1
- Authority
- KR
- South Korea
- Prior art keywords
- laser beam
- laser
- substrate
- focusing
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 241000270281 Coluber constrictor Species 0.000 claims 1
- OQZCSNDVOWYALR-UHFFFAOYSA-N flurochloridone Chemical compound FC(F)(F)C1=CC=CC(N2C(C(Cl)C(CCl)C2)=O)=C1 OQZCSNDVOWYALR-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 241000021559 Dicerandra Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000010654 Melissa officinalis Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000000865 liniment Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
- H10N60/0688—Etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Electromagnetism (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22952 | 1986-02-28 | ||
| JP61-229252 | 1986-09-26 | ||
| JP61229252A JPS6384789A (ja) | 1986-09-26 | 1986-09-26 | 光加工方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880004610A KR880004610A (ko) | 1988-06-07 |
| KR900006586B1 true KR900006586B1 (ko) | 1990-09-13 |
Family
ID=16889196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870010550A Expired KR900006586B1 (ko) | 1986-09-26 | 1987-09-23 | 레이저 스크라이빙 장치와 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US4861964A (enExample) |
| JP (1) | JPS6384789A (enExample) |
| KR (1) | KR900006586B1 (enExample) |
| CN (1) | CN1018621B (enExample) |
Families Citing this family (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708252A (en) * | 1986-09-26 | 1998-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Excimer laser scanning system |
| US6149988A (en) * | 1986-09-26 | 2000-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| US6261856B1 (en) | 1987-09-16 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Method and system of laser processing |
| JPH039309A (ja) * | 1989-06-06 | 1991-01-17 | Brother Ind Ltd | レーザによる溝加工方法 |
| US5744776A (en) * | 1989-07-14 | 1998-04-28 | Tip Engineering Group, Inc. | Apparatus and for laser preweakening an automotive trim cover for an air bag deployment opening |
| US5151389A (en) * | 1990-09-10 | 1992-09-29 | Rockwell International Corporation | Method for dicing semiconductor substrates using an excimer laser beam |
| FR2679477B1 (fr) * | 1991-07-26 | 1995-11-17 | Aerospatiale | Procede de decoupe par faisceau laser d'un materiau recouvrant un substrat et dispositifs pour sa mise en óoeuvre. |
| US5432015A (en) * | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
| JPH06124913A (ja) | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
| US5514850A (en) * | 1992-06-30 | 1996-05-07 | Sharp Kabushiki Kaisha | Defect compensation method for smoothing a surface of a transparent plate with an ArF excimer laser beam |
| US5372287A (en) * | 1992-10-05 | 1994-12-13 | Deguevara; Orlando | Article carrier |
| JP2706716B2 (ja) * | 1993-04-16 | 1998-01-28 | 株式会社 半導体エネルギー研究所 | 被膜加工装置および被膜加工方法 |
| CN1125411A (zh) * | 1993-06-11 | 1996-06-26 | 博士伦公司 | 使激光蚀刻表面上所形成的衍射槽纹最小化的方法 |
| JPH07308788A (ja) * | 1994-05-16 | 1995-11-28 | Sanyo Electric Co Ltd | 光加工法及び光起電力装置の製造方法 |
| JPH07336055A (ja) * | 1994-06-06 | 1995-12-22 | Hitachi Seiko Ltd | レーザ加工方法及びその装置 |
| CA2179045A1 (en) * | 1994-12-28 | 1996-06-29 | Kyoji Kokufuda | Method and apparatus for processing rollers, etc, by laser beam |
| WO1996033839A1 (en) | 1995-04-26 | 1996-10-31 | Minnesota Mining And Manufacturing Company | Method and apparatus for step and repeat exposures |
| US6524977B1 (en) * | 1995-07-25 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus |
| JP3292058B2 (ja) | 1996-10-01 | 2002-06-17 | 三菱電機株式会社 | レーザ光による配線基板の加工方法及びその装置 |
| US6246524B1 (en) | 1998-07-13 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
| JP4663047B2 (ja) * | 1998-07-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | レーザー照射装置及び半導体装置の作製方法 |
| US6413839B1 (en) * | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
| US6303899B1 (en) | 1998-12-11 | 2001-10-16 | Lsi Logic Corporation | Method and apparatus for scribing a code in an inactive outer clear out area of a semiconductor wafer |
| US6420245B1 (en) | 1999-06-08 | 2002-07-16 | Kulicke & Soffa Investments, Inc. | Method for singulating semiconductor wafers |
| US6562698B2 (en) | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
| US6555447B2 (en) | 1999-06-08 | 2003-04-29 | Kulicke & Soffa Investments, Inc. | Method for laser scribing of wafers |
| US6274395B1 (en) | 1999-12-23 | 2001-08-14 | Lsi Logic Corporation | Method and apparatus for maintaining test data during fabrication of a semiconductor wafer |
| US7838794B2 (en) | 1999-12-28 | 2010-11-23 | Gsi Group Corporation | Laser-based method and system for removing one or more target link structures |
| US8217304B2 (en) * | 2001-03-29 | 2012-07-10 | Gsi Group Corporation | Methods and systems for thermal-based laser processing a multi-material device |
| US7723642B2 (en) | 1999-12-28 | 2010-05-25 | Gsi Group Corporation | Laser-based system for memory link processing with picosecond lasers |
| US7671295B2 (en) | 2000-01-10 | 2010-03-02 | Electro Scientific Industries, Inc. | Processing a memory link with a set of at least two laser pulses |
| US6719394B2 (en) * | 2000-04-14 | 2004-04-13 | Canon Kabushiki Kaisha | Semiconductor device, ink tank provided with such semiconductor device, ink jet cartridge, ink jet recording apparatus, method for manufacturing such semiconductor device, and communication system, method for controlling pressure, memory element, security system of ink jet recording apparatus |
| DE10032981A1 (de) * | 2000-07-10 | 2002-01-24 | Alltec Angewandte Laser Licht | Verfahren zur Materialbearbeitung mittels Laser |
| JP4659300B2 (ja) * | 2000-09-13 | 2011-03-30 | 浜松ホトニクス株式会社 | レーザ加工方法及び半導体チップの製造方法 |
| US7009140B2 (en) * | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
| US7102647B2 (en) * | 2001-06-26 | 2006-09-05 | Microsoft Corporation | Interactive horizon mapping |
| SG143981A1 (en) * | 2001-08-31 | 2008-07-29 | Semiconductor Energy Lab | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device |
| TWI291729B (en) | 2001-11-22 | 2007-12-21 | Semiconductor Energy Lab | A semiconductor fabricating apparatus |
| US7105048B2 (en) * | 2001-11-30 | 2006-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
| US7133737B2 (en) | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
| US6979605B2 (en) | 2001-11-30 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device using a marker on an amorphous semiconductor film to selectively crystallize a region with a laser light |
| US7214573B2 (en) | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| KR100614106B1 (ko) * | 2002-03-12 | 2006-08-22 | 미쓰보시 다이야몬도 고교 가부시키가이샤 | 취성재료의 가공방법 및 가공장치 |
| CN101335235B (zh) | 2002-03-12 | 2010-10-13 | 浜松光子学株式会社 | 基板的分割方法 |
| US6951995B2 (en) | 2002-03-27 | 2005-10-04 | Gsi Lumonics Corp. | Method and system for high-speed, precise micromachining an array of devices |
| US6744009B1 (en) | 2002-04-02 | 2004-06-01 | Seagate Technology Llc | Combined laser-scribing and laser-breaking for shaping of brittle substrates |
| US6787732B1 (en) | 2002-04-02 | 2004-09-07 | Seagate Technology Llc | Method for laser-scribing brittle substrates and apparatus therefor |
| US6580054B1 (en) | 2002-06-10 | 2003-06-17 | New Wave Research | Scribing sapphire substrates with a solid state UV laser |
| US6960813B2 (en) | 2002-06-10 | 2005-11-01 | New Wave Research | Method and apparatus for cutting devices from substrates |
| US6806544B2 (en) | 2002-11-05 | 2004-10-19 | New Wave Research | Method and apparatus for cutting devices from conductive substrates secured during cutting by vacuum pressure |
| US6984573B2 (en) * | 2002-06-14 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and apparatus |
| TWI277612B (en) * | 2002-08-09 | 2007-04-01 | Mitsuboshi Diamond Ind Co Ltd | Method and device for scribing fragile material substrate |
| KR101119262B1 (ko) * | 2002-12-05 | 2012-03-16 | 하마마츠 포토닉스 가부시키가이샤 | 레이저 가공 장치 |
| US7387922B2 (en) * | 2003-01-21 | 2008-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system |
| TWI248244B (en) * | 2003-02-19 | 2006-01-21 | J P Sercel Associates Inc | System and method for cutting using a variable astigmatic focal beam spot |
| WO2005093801A1 (en) * | 2004-03-26 | 2005-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and laser irradiation apparatus |
| US8525075B2 (en) | 2004-05-06 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
| US7820941B2 (en) * | 2004-07-30 | 2010-10-26 | Corning Incorporated | Process and apparatus for scoring a brittle material |
| US7087463B2 (en) * | 2004-08-04 | 2006-08-08 | Gelcore, Llc | Laser separation of encapsulated submount |
| US8304313B2 (en) * | 2004-08-23 | 2012-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI427682B (zh) | 2006-07-04 | 2014-02-21 | 半導體能源研究所股份有限公司 | 顯示裝置的製造方法 |
| JP4887086B2 (ja) * | 2006-07-19 | 2012-02-29 | 武井電機工業株式会社 | 薄膜除去方法及び薄膜除去装置 |
| US7994021B2 (en) * | 2006-07-28 | 2011-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| TWI412079B (zh) * | 2006-07-28 | 2013-10-11 | Semiconductor Energy Lab | 製造顯示裝置的方法 |
| TWI427702B (zh) * | 2006-07-28 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
| US7943287B2 (en) * | 2006-07-28 | 2011-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| WO2008023630A1 (en) | 2006-08-24 | 2008-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
| US8563431B2 (en) * | 2006-08-25 | 2013-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7795154B2 (en) * | 2006-08-25 | 2010-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers |
| US7749907B2 (en) | 2006-08-25 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7927991B2 (en) | 2006-08-25 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7651896B2 (en) * | 2006-08-30 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US8148259B2 (en) * | 2006-08-30 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4919738B2 (ja) * | 2006-08-31 | 2012-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5110830B2 (ja) * | 2006-08-31 | 2012-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7732351B2 (en) | 2006-09-21 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and laser processing apparatus |
| US7867907B2 (en) | 2006-10-17 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7767595B2 (en) * | 2006-10-26 | 2010-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP5205042B2 (ja) | 2006-12-20 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7960261B2 (en) * | 2007-03-23 | 2011-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor |
| JP4402708B2 (ja) * | 2007-08-03 | 2010-01-20 | 浜松ホトニクス株式会社 | レーザ加工方法、レーザ加工装置及びその製造方法 |
| US8053704B2 (en) * | 2008-05-27 | 2011-11-08 | Corning Incorporated | Scoring of non-flat materials |
| JP2010274328A (ja) * | 2009-04-30 | 2010-12-09 | Mitsuboshi Diamond Industrial Co Ltd | レーザ加工方法及びレーザ加工装置 |
| US20130256286A1 (en) * | 2009-12-07 | 2013-10-03 | Ipg Microsystems Llc | Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths |
| US20110132885A1 (en) * | 2009-12-07 | 2011-06-09 | J.P. Sercel Associates, Inc. | Laser machining and scribing systems and methods |
| CN102152000A (zh) * | 2011-02-21 | 2011-08-17 | 武汉吉事达激光技术有限公司 | 双面透明导电膜图形激光制作工艺 |
| JP2013118277A (ja) * | 2011-12-02 | 2013-06-13 | Mitsuboshi Diamond Industrial Co Ltd | Ledパターン付き基板の加工方法 |
| JP6000700B2 (ja) * | 2012-07-10 | 2016-10-05 | 株式会社ディスコ | レーザー加工方法 |
| CN102909477A (zh) * | 2012-10-31 | 2013-02-06 | 北京工业大学 | 利用超快激光在靶材表面制备大面积微光栅的方法及装置 |
| US10179952B2 (en) * | 2013-03-08 | 2019-01-15 | Rutgers, The State University Of New Jersey | Patterned thin films by thermally induced mass displacement |
| EP3007180B1 (en) * | 2013-05-28 | 2018-04-04 | Fujikura Ltd. | Oxide superconductor and method for manufacturing the same |
| ES2556541B1 (es) * | 2014-07-18 | 2016-11-03 | Wartsila Ibérica, S.A. | Método de tratamiento de superficies metálicas, cerámicas o pétreas y superficie obtenible con dicho método |
| CN105108330A (zh) | 2015-08-20 | 2015-12-02 | 京东方科技集团股份有限公司 | 一种分束器、激光发生器及准分子激光退火设备 |
| CN111843216B (zh) * | 2020-07-22 | 2022-09-09 | 江苏亚威艾欧斯激光科技有限公司 | 一种玻璃基板侧面加工装置及其加工方法 |
| CN113369996B (zh) * | 2021-06-17 | 2023-03-21 | 石钢京诚装备技术有限公司 | 一种在划线工序确定轴类工件端面中心点的工具 |
| WO2024006962A2 (en) * | 2022-06-30 | 2024-01-04 | University Of Virginia Patent Foundation | Use of lasers to selectively remove materials from substrates |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4341565A (en) * | 1980-08-26 | 1982-07-27 | American Organics Corporation | Liquid colorant composition |
| JPS5794482A (en) * | 1980-12-05 | 1982-06-11 | Hitachi Ltd | Pattern forming device by laser |
| US4468551A (en) * | 1982-07-30 | 1984-08-28 | Armco Inc. | Laser treatment of electrical steel and optical scanning assembly therefor |
| US4713518A (en) * | 1984-06-08 | 1987-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device manufacturing methods |
| US4786358A (en) * | 1986-08-08 | 1988-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a pattern of a film on a substrate with a laser beam |
-
1986
- 1986-09-26 JP JP61229252A patent/JPS6384789A/ja active Granted
-
1987
- 1987-09-16 US US07/097,190 patent/US4861964A/en not_active Expired - Lifetime
- 1987-09-23 KR KR1019870010550A patent/KR900006586B1/ko not_active Expired
- 1987-09-25 CN CN87106576A patent/CN1018621B/zh not_active Expired
-
1988
- 1988-05-03 US US07/188,766 patent/US4865686A/en not_active Ceased
-
1990
- 1990-11-02 US US07/608,397 patent/USRE33947E/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN87106576A (zh) | 1988-05-18 |
| JPS6384789A (ja) | 1988-04-15 |
| KR880004610A (ko) | 1988-06-07 |
| USRE33947E (en) | 1992-06-02 |
| CN1018621B (zh) | 1992-10-14 |
| US4865686A (en) | 1989-09-12 |
| US4861964A (en) | 1989-08-29 |
| JPH0563274B2 (enExample) | 1993-09-10 |
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