KR880004610A - 레이저 스크라이빙 장치와 방법 - Google Patents

레이저 스크라이빙 장치와 방법 Download PDF

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KR880004610A
KR880004610A KR870010550A KR870010550A KR880004610A KR 880004610 A KR880004610 A KR 880004610A KR 870010550 A KR870010550 A KR 870010550A KR 870010550 A KR870010550 A KR 870010550A KR 880004610 A KR880004610 A KR 880004610A
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laser beam
laser
substrate
zimmer
focusing
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KR870010550A
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KR900006586B1 (ko
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히사토 시노하라
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야마자끼 순페이
세미콘닥터 에너지 라보라토리 캄파니 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0688—Etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

내용 없음

Description

레이저 스크라이빙 장치와 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 따른 레이저 스크라이빙 장치의 단면도.
제2a도-제2d도는 레이저 빔의 단면을 보인 설명도.
제3a도와 제3b도는 본 발명에 따라 처리된 기재의 평면도와 측면도.
제4a도와 제4b도는 본 발명의 다른 실시예에 따라 처리된 기재의 평면도와 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 익지머 레이저 2 : 확대기
3 : 슬리트 4 : 원통형 렌즈
20 : 레이저 빔

Claims (15)

  1. 레이저 스크라이빙 장치에 있어서, 이 장치가 익지머 레이저, 이 익지머 레이저로부터 방출된 레이서빔을 확대하기 위한 레이저 빔 확대기, 확대된 레이저 빔의 변부를 제거하기 위한 차단수단, 상기 차단수단을 지나는 레이저 빔의 촛점을 맞추기 위한 볼록렌즈와, 촛점이 맞추어진 레이저 빔으로 처리될 위치에 기재를 고정하기 위한 기재홀더로 구성됨을 특징으로 하는 레이저 스크라이빙 장치.
  2. 청구범위 1항에 있어서, 상기 볼록렌즈가 선의 형태로 상기 기재상에 레이저 빔의 촛점을 맞춤을 특징으로 하는 장치.
  3. 청구범위 1항에 있어서, 상기 확대기가 익지머 레이저로부터 일측 방향으로 레이저 빔을 확대함을 특징으로 하는 장치.
  4. 청구범위 3항에 있어서, 상기 볼록렌즈가 확대방향에 대하여 수직인 방향에 대해 확대된 레이저 빔의 촛점을 맞추는 원통형 렌즈임을 특징으로 하는 장치.
  5. 청구범위 1항에 있어서, 상기 기재홀더가 레이저 빔의 이동방향에 대하여 수직인 방향으로 이동될 수 있음을 특징으로 하는 장치.
  6. 기재에 형성된 필름을 스크라이빙 하기 위한 방법에 있어서, 이 방법이 익지머 레이저로부터의 레이저 빔을 확대하는 단계, 확대된 레이저 빔의 변부를 제거하는 단계, 기재상에 변부가 제거된 레이저 빔의 촛점을 맞추는 단계와, 조사된 필름부분을 제거하는 단계로 구성됨을 특징으로 하는 레이저 스크라이빙 방법.
  7. 청구범위 6항에 있어서, 상기 익지머 레이저로부터 방출되는 레이저 빔의 파장이 400나노 메타 이하임을 특징으로 하는 방법.
  8. 청구범위 7항에 있어서, 상기 필름이 이 필름의 해당부분을 제거하여 형성된 요구에 의하여 다수의 분리부분으로 졀단됨을 특징으로 하는 방법.
  9. 청구범의 7항에 있어서, 확대단계가 일측 방향으로만 수행됨을 특징으로 하는 방법.
  10. 청구범위 9항에 있어서, 확대된 레이저 빔이 확대방향에 대하여 수직인 방향에 대해 촛점이 맞추어짐을 특징으로 하는 방법.
  11. 청구범위 10항에 있어서, 촛점을 맞추는 단계가 상기 기재를 촛점방향으로 이동시키는 동안 상기 기개에서 반복적으로 수행되므로서 상기 기재에 다수의 요구가 형성됨을 특징으로 하는 방법.
  12. 청구범위 6항에 있어서, 상기 레이저 빔이 펄스화됨을 특징으로 하는 방법.
  13. 청구범위 12항에 있어서, 펄스화된 레이저 빔의 펄스 폭이 50나노초 이하임을 특징으로 하는 방법.
  14. 청구범위 6항에 있어서, 상기 확대단계가 일측방향에 대하여서만 수행되고 변부가 제거된 레이점이 선형단면의 평형빔이 됨을 특징으로 하는 방법.
  15. 청구범위 6항에 있어서, 선형 단면인 상기 레이저 빔의 변부를 제거하는 단계를 포함함을 특징으로 하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870010550A 1986-09-26 1987-09-23 레이저 스크라이빙 장치와 방법 KR900006586B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22952 1986-09-26
JP61-229252 1986-09-26
JP61229252A JPS6384789A (ja) 1986-09-26 1986-09-26 光加工方法

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KR880004610A true KR880004610A (ko) 1988-06-07
KR900006586B1 KR900006586B1 (ko) 1990-09-13

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KR1019870010550A KR900006586B1 (ko) 1986-09-26 1987-09-23 레이저 스크라이빙 장치와 방법

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US (3) US4861964A (ko)
JP (1) JPS6384789A (ko)
KR (1) KR900006586B1 (ko)
CN (1) CN1018621B (ko)

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