JPS5794482A - Pattern forming device by laser - Google Patents

Pattern forming device by laser

Info

Publication number
JPS5794482A
JPS5794482A JP55171000A JP17100080A JPS5794482A JP S5794482 A JPS5794482 A JP S5794482A JP 55171000 A JP55171000 A JP 55171000A JP 17100080 A JP17100080 A JP 17100080A JP S5794482 A JPS5794482 A JP S5794482A
Authority
JP
Japan
Prior art keywords
laser light
slit
laser
oscillator
beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55171000A
Inventor
Mikio Hongo
Takeoki Miyauchi
Katsuro Mizukoshi
Hiroshi Yamaguchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55171000A priority Critical patent/JPS5794482A/en
Publication of JPS5794482A publication Critical patent/JPS5794482A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Exposure apparatus for microlithography
    • G03F7/70216Systems for imaging mask onto workpiece
    • G03F7/7025Size or form of projection system aperture
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073Shaping the laser spot
    • B23K26/0732Shaping the laser spot into a rectangular shape

Abstract

PURPOSE:To use oscillated laser light effectively and increase the speed of pattern formation by providing an optical system for forming laser light into a long circle between a laser oscillator and a rectangular aperture for forming the laser light into a rectangular shape. CONSTITUTION:A system consisting of circular cylindrical lenses 17, 18 is provided between a laser oscillator 1 and a variable rectangular slit 4. The laser light 2 from the oscillator 1 is expanded of a beam width with a beam expander 16, and is next deformed to a beam of a long circle by a system consisting of circular cylindrical lenses 17, 18. Thence, it is formed to a rectangular shape within the range exceeding a working threshold by a variable slit 4, and is imaged onto the work 6 at 1/M the slit size (M is the magnification of an objective lens 5) as the projected image of the slit 4 by the objective lens 5, whereby it is worked. While the work 6 is scanned by driving an X-Y table 9, the laser light 2 is ON-OFF controlled, whereby a desired pattern is obtained.
JP55171000A 1980-12-05 1980-12-05 Pattern forming device by laser Pending JPS5794482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171000A JPS5794482A (en) 1980-12-05 1980-12-05 Pattern forming device by laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171000A JPS5794482A (en) 1980-12-05 1980-12-05 Pattern forming device by laser

Publications (1)

Publication Number Publication Date
JPS5794482A true JPS5794482A (en) 1982-06-11

Family

ID=15915246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171000A Pending JPS5794482A (en) 1980-12-05 1980-12-05 Pattern forming device by laser

Country Status (1)

Country Link
JP (1) JPS5794482A (en)

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6061190A (en) * 1983-09-06 1985-04-08 Illinois Tool Works Optical type selective metallic film removing device
US4527043A (en) * 1983-02-18 1985-07-02 Hitachi, Ltd. Laser machining system
US4635243A (en) * 1983-12-16 1987-01-06 Canon Kabushiki Kaisha Optical information processing apparatus
JPS6240986A (en) * 1985-08-20 1987-02-21 Fuji Electric Corp Res & Dev Ltd Laser beam machining method
JPS62104692A (en) * 1985-11-01 1987-05-15 Fuji Electric Corp Res & Dev Ltd Laser beam device
JPS62142370A (en) * 1985-12-17 1987-06-25 Fuji Electric Corp Res & Dev Ltd Manufacture of optical semiconductor device
JPS62168688A (en) * 1986-01-21 1987-07-24 Fuji Electric Corp Res & Dev Ltd Laser beam machining device
JPS6342364A (en) * 1986-08-08 1988-02-23 Semiconductor Energy Lab Co Ltd Processing method for conductive film on substrate
JPS6360082A (en) * 1986-08-28 1988-03-16 Semiconductor Energy Lab Co Ltd Optical processing method
JPS6384789A (en) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd Light working method
JPS63160780A (en) * 1986-12-23 1988-07-04 Fuji Electric Co Ltd Laser beam machining device
JPS63215390A (en) * 1987-03-04 1988-09-07 Semiconductor Energy Lab Co Ltd Light machining method
JPS63220991A (en) * 1987-03-06 1988-09-14 Semiconductor Energy Lab Co Ltd Laser beam machining method
JPH01180796A (en) * 1987-12-28 1989-07-18 Nippon Steel Corp Laser beam radiation method
JPH01181987A (en) * 1988-01-12 1989-07-19 Nippon Steel Corp Method and device for controlling irradiation of laser beam
JPH01306088A (en) * 1988-06-01 1989-12-11 Nippei Toyama Corp Variable beam laser processing device
JPH01309794A (en) * 1988-06-07 1989-12-14 Matsushita Electric Ind Co Ltd Production of film capacitor
JPH06292988A (en) * 1993-04-16 1994-10-21 Semiconductor Energy Lab Co Ltd Device and method for film processing
US5406042A (en) * 1990-09-17 1995-04-11 U.S. Philips Corporation Device for and method of providing marks on an object by means of electromagnetic radiation
JPH08112682A (en) * 1995-04-28 1996-05-07 Semiconductor Energy Lab Co Ltd Optical processing method
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
US6089698A (en) * 1992-02-05 2000-07-18 Xaar Technology Limited Nozzles and methods of and apparatus for forming nozzles
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6295262B1 (en) 1997-04-10 2001-09-25 Matsushita Electric Industrial Co., Ltd. Method and apparatus for recording information onto optical disk
US6331692B1 (en) * 1996-10-12 2001-12-18 Volker Krause Diode laser, laser optics, device for laser treatment of a workpiece, process for a laser treatment of workpiece
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
WO2007062130A1 (en) * 2005-11-22 2007-05-31 J.P. Sercel Associates Inc. System and method for laser machining of three-dimensional structures
US7411151B2 (en) * 2002-05-24 2008-08-12 Riken Method and device for processing inside of transparent material
CN101990479A (en) * 2008-03-18 2011-03-23 万佳雷射有限公司 Method and apparatus for laser processing the surface of a drum
KR101084793B1 (en) 2005-02-01 2011-11-21 삼성에스디아이 주식회사 Optical system for laser scan fabrication
KR20160096462A (en) * 2015-02-05 2016-08-16 한국기계연구원 Apparatus and method of processing anti-counterfeiting pattern
US10388098B2 (en) 2014-02-07 2019-08-20 Korea Institute Of Machinery & Materials Apparatus and method of processing anti-counterfeiting pattern, and apparatus and method of detecting anti-counterfeiting pattern

Cited By (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4527043A (en) * 1983-02-18 1985-07-02 Hitachi, Ltd. Laser machining system
JPH04104286U (en) * 1983-09-06 1992-09-08
JPS6061190A (en) * 1983-09-06 1985-04-08 Illinois Tool Works Optical type selective metallic film removing device
US4635243A (en) * 1983-12-16 1987-01-06 Canon Kabushiki Kaisha Optical information processing apparatus
JPS6240986A (en) * 1985-08-20 1987-02-21 Fuji Electric Corp Res & Dev Ltd Laser beam machining method
JPS62104692A (en) * 1985-11-01 1987-05-15 Fuji Electric Corp Res & Dev Ltd Laser beam device
JPH0453630B2 (en) * 1985-11-01 1992-08-27 Fuji Denki Sogo Kenkyusho Kk
JPS62142370A (en) * 1985-12-17 1987-06-25 Fuji Electric Corp Res & Dev Ltd Manufacture of optical semiconductor device
JPS62168688A (en) * 1986-01-21 1987-07-24 Fuji Electric Corp Res & Dev Ltd Laser beam machining device
JPS6342364A (en) * 1986-08-08 1988-02-23 Semiconductor Energy Lab Co Ltd Processing method for conductive film on substrate
JPS6360082A (en) * 1986-08-28 1988-03-16 Semiconductor Energy Lab Co Ltd Optical processing method
USRE33947E (en) * 1986-09-26 1992-06-02 Semiconductor Energy Laboratory Co., Ltd. Laser scribing method
JPH0563274B2 (en) * 1986-09-26 1993-09-10 Handotai Energy Kenkyusho
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPS6384789A (en) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd Light working method
US4861964A (en) * 1986-09-26 1989-08-29 Semiconductor Energy Laboratory Co., Ltd. Laser scribing system and method
US4865686A (en) * 1986-09-26 1989-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser scribing method
US5708252A (en) * 1986-09-26 1998-01-13 Semiconductor Energy Laboratory Co., Ltd. Excimer laser scanning system
JPS63160780A (en) * 1986-12-23 1988-07-04 Fuji Electric Co Ltd Laser beam machining device
JPS63215390A (en) * 1987-03-04 1988-09-07 Semiconductor Energy Lab Co Ltd Light machining method
JPS63220991A (en) * 1987-03-06 1988-09-14 Semiconductor Energy Lab Co Ltd Laser beam machining method
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
JPH0455785B2 (en) * 1987-12-28 1992-09-04 Nippon Steel Corp
JPH01180796A (en) * 1987-12-28 1989-07-18 Nippon Steel Corp Laser beam radiation method
JPH01181987A (en) * 1988-01-12 1989-07-19 Nippon Steel Corp Method and device for controlling irradiation of laser beam
JPH01306088A (en) * 1988-06-01 1989-12-11 Nippei Toyama Corp Variable beam laser processing device
JPH01309794A (en) * 1988-06-07 1989-12-14 Matsushita Electric Ind Co Ltd Production of film capacitor
US5406042A (en) * 1990-09-17 1995-04-11 U.S. Philips Corporation Device for and method of providing marks on an object by means of electromagnetic radiation
US6089698A (en) * 1992-02-05 2000-07-18 Xaar Technology Limited Nozzles and methods of and apparatus for forming nozzles
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6638800B1 (en) 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7179726B2 (en) 1992-11-06 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US7799665B2 (en) 1992-11-06 2010-09-21 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US6410374B1 (en) 1992-12-26 2002-06-25 Semiconductor Energy Laborartory Co., Ltd. Method of crystallizing a semiconductor layer in a MIS transistor
US6544825B1 (en) 1992-12-26 2003-04-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
US7351615B2 (en) 1992-12-26 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a MIS transistor
JPH06292988A (en) * 1993-04-16 1994-10-21 Semiconductor Energy Lab Co Ltd Device and method for film processing
US6475839B2 (en) 1993-11-05 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing of TFT device by backside laser irradiation
US6617612B2 (en) 1993-11-05 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a semiconductor integrated circuit
US6265745B1 (en) 1995-02-21 2001-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6709905B2 (en) 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7615423B2 (en) 1995-02-21 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7045403B2 (en) 1995-02-21 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6204099B1 (en) 1995-02-21 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6921686B2 (en) 1995-02-21 2005-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
JPH08112682A (en) * 1995-04-28 1996-05-07 Semiconductor Energy Lab Co Ltd Optical processing method
US6331692B1 (en) * 1996-10-12 2001-12-18 Volker Krause Diode laser, laser optics, device for laser treatment of a workpiece, process for a laser treatment of workpiece
US6295262B1 (en) 1997-04-10 2001-09-25 Matsushita Electric Industrial Co., Ltd. Method and apparatus for recording information onto optical disk
US7411151B2 (en) * 2002-05-24 2008-08-12 Riken Method and device for processing inside of transparent material
KR101084793B1 (en) 2005-02-01 2011-11-21 삼성에스디아이 주식회사 Optical system for laser scan fabrication
WO2007062130A1 (en) * 2005-11-22 2007-05-31 J.P. Sercel Associates Inc. System and method for laser machining of three-dimensional structures
US8552338B2 (en) 2005-11-22 2013-10-08 Ipg Microsystems Llc System and method for laser machining of three-dimensional structures
CN101990479A (en) * 2008-03-18 2011-03-23 万佳雷射有限公司 Method and apparatus for laser processing the surface of a drum
US10388098B2 (en) 2014-02-07 2019-08-20 Korea Institute Of Machinery & Materials Apparatus and method of processing anti-counterfeiting pattern, and apparatus and method of detecting anti-counterfeiting pattern
KR20160096462A (en) * 2015-02-05 2016-08-16 한국기계연구원 Apparatus and method of processing anti-counterfeiting pattern

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